KSB13003C KSU13003C

NPN Silicon Power Transistor, VCBO= 800V, VCEO= 450V, IC= 1.5A
General Description
Features
• High voltage, High speed power switching
• VCBO = 800V
• Suitable for Electronic Ballast up to 21W
• VCEO = 450V
• VBEO = 9V
• IC = 1.5A
TO-92
TO-251
3
2
3
2
1
1
Ordering Information
Pin Assignment
Ordering number
Package
Packing
1
2
3
KSB13003C
TO-92
B
C
E
Ammo
KSB13003CR
TO-92
E
C
B
Ammo
KSU13003C
TO-251
B
C
E
Tube
KSU13003CR
TO-251
E
C
B
Tube
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͻΒΟΦΒΣΪ͑ͣͣ͑͢͡
KSX13003C Series
KSB13003C
KSU13003C
NPN Silicon Power Transistor, VCBO= 800V, VCEO= 450V, IC= 1.5A
Absolute Maximum Ratings
TC=25୅ unless otherwise noted
RATING
CHARACTERISTICS
SYMBOL
UNIT
TO-92
TO-251
Collector-Base Voltage
VCBO
800
V
Collector-Emitter Voltage
VCEO
450
V
Emitter-Base Voltage
VEBO
9
V
Collector Current(DC)
IC
1.5
A
Collector Current(Pulse)
ICP
3
A
Base Current
IB
0.75
A
Collector Dissipation(Tc=25୅)
PC
Junction Temperature
TJ
150
୅
Storage Temperature
TSTG
-65~150
୅
Electrical Characteristics
CHARACTERISTICS
1.1
25
W
TC=25୅ unless otherwise noted
SYMBOL
Test Condition
Min
Typ.
Max
Unit
Collector-Base Breakdown Voltage
VCBO
IC=500ȝA, IE=0
800
V
Collector-Emitter Breakdown Voltage
VCEO
IC=10mA, IB=0
450
V
Emitter Cut-off Current
IEBO
VEB=9V,IC=0
*DC Current Gain
hFE1
hFE2
VCE=5V,IC=0.2A
VCE=5V,IC=1A
*Collector-Emitter Saturation Voltage
VCE(sat)
IC=0.5A,IB=0.1A
0.8
V
*Base-Emitter Saturation Voltage
VBE(sat)
IC=0.5A,IB=0.1A
1.2
V
Output Capacitance
Cob
Current Gain Bandwidth Product
fT
Turn on Time
ton
Storage Time
tstg
Fall Time
tF
1
20
6
VCB=10V, f=0.1MHz
VCE=10V,IC=0.1A
Vcc=125V, Ic=2A
IB1=0.2A, IB2= -0.2A
RL=125ȍ
ᒻ
40
ᓂ
21
ᓊ
4
1.1
ᓪ
4.0
ᓪ
0.7
ᓪ
* Pulse Test: Pulse Width”ȝV'XW\&\FOH”
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͻΒΟΦΒΣΪ͑ͣͣ͑͢͡
KSX13003C Series
KSB13003C
KSU13003C
KSX13003C Series
Typical Characteristics
1.6
HFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT [A]
2.0
IB=500mA
1.2
IB=100mA
0.8
IB=50mA
0.4
IB=0mA
0.0
0
1
2
3
4
5
VCE, COLLECTOR-EMITTER VOLTAGE [V]
IC, COLLECTOR CURRENT [A]
Figure 1. Static Characteristic
VCE(SAT), SATURATION VOLTAGE [V]
VBE(SAT), SATURATION VOLTAGE[V]
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT [A]
IC, COLLECTOR CURRENT [A]
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
TS, SWITCHING TIME [V]
PC, COLLECTOR POWER DISSIPATION[W]
1.4
IC, COLLECTOR CURRENT [A]
Figure 5. Resistive Load Switching Time
1.2
TO-92
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
175
Tc, CASE TEMPERATURE [୅]
Figure 6. Power Derating
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͻΒΟΦΒΣΪ͑ͣͣ͑͢͡
KSX13003C Series
PC, COLLECTOR POWER DISSIPATION[W]
Typical Characteristics
30
25
TO-251
20
15
10
5
0
0
25
50
75
100
125
150
175
Tc, CASE TEMPERATURE [୅]
Figure 7. Power Derating
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͻΒΟΦΒΣΪ͑ͣͣ͑͢͡
KSX13003C Series
Package Dimension
{vT`YG
4.58±0.25
4.58±0.25
3°
3.71±0.2
4°
14.47±0.5
0.46±0.1
1.27typ
3.6±0.25
1.02±0.1
3.71±0.25
1.27typ
Dimensions in Millimeters
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͻΒΟΦΒΣΪ͑ͣͣ͑͢͡
KSX13003C Series
Package Dimension
W0
W
W1
H0
H
W2
H1
{vT`YG{hwpunG
D
0
F1 F2
P1
Item
P2
P
Symbol
͵ΚΞΖΟΤΚΠΟ͑ΌΞΞΎ
΃ΖΗΖΣΖΟΔΖ
΅ΠΝΖΣΒΟΔΖ
Component pitch
P
ͣͨ͢͟
ρͦ͟͡
Side lead to center of feed hole
P1
ͤͩͦ͟
ρͦ͟͡
Center lead to center of feed hole
P2
ͧͤͦ͟
ρͦ͟͡
FI,F2
ͣͦ͟
ͣ͜͟͟͢͡͠͞͡
Carrier Tape width
W
ͩ͢͟͡
ͦ͜͢͟͟͡͠͞͡
Adhesive tape width
W0
ͧ͟͡
ρͦ͟͡
Tape feed hole location
W1
ͪ͟͡
ρͦ͟͡
Adhesive tape position
W2
Lead pitch
͑͑͢͟͡;ͲΉ
ʹΖΟΥΖΣ͑ΠΗ͑ΗΖΖΕ͑ΙΠΝΖ͑ΥΠ͑ΓΠΥΥΠΞ͑ΠΗ͑ΔΠΞΡΠΟΖΟΥ͑
H
ͪͦ͢͟
ρ͢
ʹΖΟΥΖΣ͑ΠΗ͑ΗΖΖΕ͑ΙΠΝΖ͑ΥΠ͑ΝΖΒΕ͑ΗΠΣΞ
H0
ͧ͢͟͡
ρͦ͟͡
Component height
H1
Tape feed hole diameter
D0
ͣͨ͑͟͡ΞΒΩ
ͥ͟͡
ρͣ͟͡
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͻΒΟΦΒΣΪ͑ͣͣ͑͢͡
KSX13003C Series
Package Dimension
{vTY\XG
2.3±0.1
6.6±0.2
5.35±0.15
0.75±0.15
0.8±0.15
0.6±0.1
2.3typ
7±0.2
^U_
±0.3
7.5·WU[G
5.6±0.2
0.5±0.05
0.5+0.1
-0.05
1.2±0.3
2.3typ
Dimensions in Millimeters
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͻΒΟΦΒΣΪ͑ͣͣ͑͢͡