KSB13005AR KSB13005AR ◎ SEMIHOW REV.A1,July 2014 KSB13005AR KSB13005AR High Voltage Switch Mode Application • High voltage, high speed power switching • Suitable for switching regulator, inverters, motor controls Absolute Maximum Ratings 4 Amperes NPN Silicon Power Transistor 2.8 Watts TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT VCBO VCEO VEBO IC ICP IB PC TJ TSTG 700 400 9 4 8 2 2.8 150 -65~150 V V V A A A W ℃ ℃ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature Electrical Characteristics (1) TO-92 1. Emitter 2. Collector 3. Base 3 2 1 TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL Collector-Emitter Sustaining Voltage VCEO(sus) Test Condition Min IC=10mA, IB=0 Typ. Max Unit 400 V IEBO VEB=9V,IC=0 DC Current Gain hFE1 hFE2 VCE=5V,IC=1A VCE=5V,IC=2A Collector-Emitter Saturation Voltage VCE(sat) IC=1A,IB=0.2A IC=2A,IB=0.5A IC=4A,IB=1A 0.5 0.6 1 V V V Base-Emitter Saturation Voltage VBE(sat) IC=1A,IB=0.2A IC=2A,IB=0.5A 1.2 1.6 V V Output Capacitance Cob 1 ㎃ Emitter Cut-off Current 10 8 VCB=10V, f=0.1MHz 60 40 ㎊ 65 Current Gain Bandwidth Product fT VCE=10V,IC=0.5A Turn on Time ton Storage Time tstg Fall Time tF Vcc=125V, Ic=2A IB1=0.4A, IB2= -0.4A RL=62.5Ω (Note 2 ) ㎒ 4 0.8 ㎲ 4.0 ㎲ 0.9 ㎲ Notes ; 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 2. Final Test Condition : UI9600, Vcc=5V, Ic=0.5A ( tstg Class = A : 2.0~2.5, B : 2.5~3.0, C : 3.0~3.5 ) hFE1 Classification R 19 ~ 28 O 26 ~ 35 Y 33 ~ 40 S AR 13005 YWW Z S YWW Z SemiHow Symbol Y; year code, WW; week code hFE1 Classification ◎ SEMIHOW REV.A1,July 2014 KSB13005AR hFE, DC CURRENT GAIN [A] VBE(SAT), VCE(SAT), SATURATION VOLTAGE [V] Typical Characteristics IC, COLLECTOR CURRENT [A] IC, COLLECTOR CURRENT [A] Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage tR, tD, TURN ON TIME [uS] Cob, CAPACITANCE [pF] Figure 1. DC Current Gain IC, COLLECTOR CURRENT [A] VCB, COLLECTOR-BASE VOLTAGE [V] Figure 3. Collector Output Capacitance tSTG, tF TURN OFF TIME [uS] IC, COLLECTOR CURRENT [A] Figure 4. Turn On Time IC, COLLECTOR CURRENT [A] Figure 5. Turn Off Time VCE, COLLECTOR-EMITTER VOLTAGE [V] Figure 6. Safe Operating Area ◎ SEMIHOW REV.A1,July 2014 KSB13005AR PC, COLLECTOR POWER DISSIPATION [W] Typical Characteristics 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 175 Tc, CASE TEMPERATURE [℃] Figure 7. Power Derating ◎ SEMIHOW REV.A1,July 2014 KSB13005AR Package Dimension TO-92 4.58±0.25 4.58±0.25 3° 3.71±0.2 4° 14.47±0.5 0.46±0.1 1.27typ 3.6±0.25 1.02±0.1 3.71±0.25 1.27typ Dimensions in Millimeters ◎ SEMIHOW REV.A1,July 2014 KSB13005AR Package Dimension W0 W W1 H0 H W2 H1 TO-92 TAPING D 0 F1 F2 P1 P2 P Dimension [mm] Item Symbol Reference Tolerance Component pitch P 12.7 ±0.5 Side lead to center of feed hole P1 3.85 ±0.5 Center lead to center of feed hole P2 6.35 ±0.5 FI,F2 2.5 +0.2/-0.1 Carrier Tape width W 18.0 +1.0/-0.5 Adhesive tape width W0 6.0 ±0.5 Tape feed hole location W1 9.0 ±0.5 Adhesive tape position W2 Lead pitch 1.0 MAX Center of feed hole to bottom of component H 19.5 ±1 Center of feed hole to lead form H0 16.0 ±0.5 Component height H1 Tape feed hole diameter D0 27.0 max 4.0 ±0.2 ◎ SEMIHOW REV.A1,July 2014