SEMIHOW KSB13003ER

KSB130
003ER
KSB13003ER
◎ SEMIHOW REV.A0,Apr 2008
KSB130
003ER
KSB13003ER
High Voltage Switch Mode Application
• High Voltage, High Speed Switching
• Suitable for Switching regulator, Inverters motor controls
Max Operating temperature
• 150℃ Max.
• 8KV ESD proof at HBM (C=100㎊, R=1.5㏀)
Absolute Maximum Ratings
TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
RATING
UNIT
VCBO
VCES
VCEO
VEBO
IC
PC
TSTG
TJ
700
700
400
9
1.5
1.1
-65~150
150
V
V
V
V
A
W
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
Collector Emitter Voltage
Collector-Emitter
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
Max. Operating Junction Temperature
Electrical Characteristics
CHARACTERISTICS
1.5 Amperes
NPN Silicon Power Transistor
1.1 Watts
TO-92
1. Emitter
2. Collector
3. Base
3
1
2
TC=25℃ unless otherwise noted
SYMBOL
Test Condition
Min
Typ.
Max
Unit
Collector-Base Breakdown Voltage
VCBO
IC=500μA, IE=0
700
V
Collector-Emitter Breakdown Voltage
VCEO
IC=1mA, IB=0
400
V
Emitter Cut-off Current
IEBO
VEB=9V,IC=0
*DC Current Gain
hFE1 (note)
hFE2
10
9
3
VCE=10V,IC=400mA
VCE=10V,IC=1.5mA
㎂
38
*Collector-Emitter Saturation Voltage
VCE(sat)
IC=0.5A,IB=0.1A
IC=1A,IB=0.25A
IC=1.5A,IB=0.5A
0.5
1.0
3.0
V
V
V
*Base-Emitter Saturation Voltage
VBE(sat)
IC=0.5A,IB=0.1A
IC=1A,IB=0.25A
1.0
1.2
V
V
Cob
VCB=10V, f=0.1MHz
Current Gain Bandwidth Product
fT
VCE=10V,IC=0.1A
T
Turn
on Time
Ti
ton
Storage Time
tstg
Output Capacitance
*Fall
PulseTime
Test: Pulse Width≤300μs, Duty Cycle≤2%
tF
Note.
hFE1
Classification
㎊
21
㎒
4
Vcc=125V, Ic=2A
IB1=0.2A, IB2= -0.2A
RL=125Ω
11
1.1
㎲
4.0
㎲
0.7
㎲
Package Mark information.
R
15 ~ 25
O
20 ~ 30
Y
25 ~ 35
S
ER
13003
YWW Z
R
YWW
Z
Pin connection (ECB)
Y; year code,
code WW; week code
hFE1 Classification
◎ SEMIHOW REV.A0,Apr 2008
KSB130
003ER
Typical Characteristics
Saturation Voltage
hFFE, DC Current Gain
VBE(S)),VCE(S)[V], Saturation Volta
age
DC CURRENT GAIN
IC[A], Collector Current
IC[A], Collector Current
Power Derating
IC[A
A], Collector Current
Pow
wer Derating FACTOR(%
%)
Safety Operating Area
VCE[V], Collector-Emitter Voltage
TC[℃], Case Temperature
◎ SEMIHOW REV.A0,Apr 2008
KSB130
003ER
Package Dimension
TOTO
-92
3.71±0.2
4.58±0.25
3°
4.58±0.25
4°
14.47
7±0.5
0.46±0.1
1 27t
1.27typ
3.6±0.25
1.02±±0.1
3.71±0.225
1.27typ
Dimensions in Millimeters
◎ SEMIHOW REV.A0,Apr 2008
KSB130
003ER
Package Dimension
W
W1
W0
H0
H
W2
H1
TOTO
-92 TAPING
D0
F1 F2
P1
P
P2
Dimension [mm]
Item
Symbol
Reference
Tolerance
Component pitch
P
12.7
±0.5
Side lead to center of feed hole
P1
3.85
±0.5
Center lead to center of feed hole
P2
6.35
±0.5
FI,F2
2.5
+0.2/-0.1
Carrier Tape width
W
18.0
+1.0/-0.5
Adhesive tape width
W0
6.0
±0.5
Tape feed hole location
W1
9.0
±0.5
Adhesive tape position
W2
Lead pitch
1.0 MAX
Center of feed hole to bottom of component
H
19.5
±1
Center of feed hole to lead form
H0
16.0
±0.5
Component height
H1
Tape feed hole diameter
D0
27.0 max
4.0
±0.2
◎ SEMIHOW REV.A0,Apr 2008