HFS640 - SemiHow

BVDSS = 200 V
RDS(on) typ ȍ
HFS640
ID = 18* A
200V N-Channel MOSFET
TO-220F
FEATURES
‰ Originative New Design
1
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
2
3
1.Gate 2. Drain 3. Source
D
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 37 nC (Typ.)
‰ Extended Safe Operating Area
G
‰ Lower RDS(ON) ȍ7\S#9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
S
TC=25୅ unless otherwise specified
Parameter
Value
Units
200
V
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25ఁ͚͑
18*
A
Drain Current
– Continuous (TC = 100ఁ͚͑
11.4*
A
IDM
Drain Current
– Pulsed
72*
A
VGS
Gate-Source Voltage
ρͤ͑͡
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
250
mJ
IAR
Avalanche Current
(Note 1)
18.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
13.9
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25ఁ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑
43
W
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
(Note 1)
0.35
W/ఁ͑
-55 to +150
ఁ͑
300
ఁ͑
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Typ.
Max.
RșJC
Symbol
Junction-to-Case
Parameter
--
2.89
RșJA
Junction-to-Ambient
--
62.5
Units
ఁ͠Έ͑
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͦ͑͡͡
HFS640
Nov 2005
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ͑
2.0
--
4.0
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 9.0 A͑
--
0.145
0.18
‫͑ש‬
VGS = 0 V, ID = 250 Ꮃ͑
200
--
--
V
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ͑
--
0.2
--
·͠ఁ͑
VDS = 200 V, VGS = 0 V͑
--
--
1
Ꮃ͑
VDS = 160 V, TC = 125ఁ͑
--
--
10
Ꮃ͑
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ԩBVDSS Breakdown Voltage Temperature
Coefficient
/ԩTJ
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
Ꮂ͑
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
Ꮂ͑
--
1300
1700
Ꮔ͑
--
175
230
Ꮔ͑
--
26
34
Ꮔ͑
--
20
40
Ꭸ͑
--
150
300
Ꭸ͑
--
150
300
Ꭸ͑
--
110
220
Ꭸ͑
--
37
48
Οʹ͑
--
5.5
--
Οʹ͑
--
13
--
Οʹ͑
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz͑
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 100 V, ID = 18 A,
RG = 25 ‫͑ש‬
͑
͙͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑ͿΠΥΖ͚͑ͥͦ͑͝
VDS = 160 V, ID = 18 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͑͝
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
18
ISM
Pulsed Source-Drain Diode Forward Current
--
--
72
VSD
Source-Drain Diode Forward Voltage
IS = 18 A, VGS = 0 V
--
--
1.5
V
trr
Reverse Recovery Time
--
200
--
Ꭸ͑
Qrr
Reverse Recovery Charge
IS = 18 A, VGS = 0 V
diFGW $ȝV(Note 4)
--
1.50
--
ȝ&
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1.16mH, IAS=18A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͦ͑͡͡
HFS640
Electrical Characteristics TC=25 qC
HFS640
Typical Characteristics
VGS
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
Bottom: 5.0V
ID, Drain Current [A]
ID, Drain Current [A]
Top:
୔ Notes
1. 250us Pulse Test
2. T c=25୅
୔ Notes
1. VDS=40V
2. 250us Pulse Test
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
RDS(ON)[Ÿ@
Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
Figure 2. Transfer Characteristics
୔ Notes
1. VGS=0V
2. 250us Pulse Test
୔ Notes : T J=25୅
ID, Drain Current [A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2500
Ciss
1500
Coss
1000
䈜㻌㻺㼛㼠㼑㻌㻧
1. VGS = 0 V
2. f = 1 MHz
500
Crss
VGS, Gate-Source Voltage [V]
2000
Capacitances [pF]
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = 40V
VDS = 100V
10
VDS = 160V
8
6
4
2
* Note : ID = 18.0 A
0
-1
10
0
10
1
10
0
0
8
16
24
32
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
40
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͦ͑͡͡
HFS640
Typical Characteristics
(continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
* Note :
1. VGS = 0 V
2. ID = 250 PA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
Note :
1. VGS = 10 V
2. ID = 1.0 A
0.5
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
20
Operation in This Area
is Limited by R DS(on)
102
16
ID, Drain Current [A]
1
10
10 ms
100 ms
DC
100
10-1
* Notes :
1. TC = 25 oC
12
8
4
2. TJ = 150 oC
3. Single Pulse
10-2 0
10
101
0
25
102
50
75
100
125
150
TC, Case Temperature [ 䉝㼉
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
Zș -&(t), Thermal Response
ID, Drain Current [A]
100 Ps
1 ms
0
10
0.2
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. Zș -&(t) = 2.89 䉝㻛㼃 㻌㻹㼍㼤㻚
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zș -&(t)
0.1
0.05
-1
10
0.02
PDM
0.01
t1
single pulse
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
t2
0
10
1
10
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͦ͑͡͡
HFS640
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͦ͑͡͡
HFS640
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͦ͑͡͡
HFS640
Package Dimension
{vTYYWmG
±0.20
±0.20
2.54±0.20
6.68±0.20
0.70±0.20
12.42±0.20
3.30±0.20
2.76±0.20
1.47max
9.75±0.20
15.87±0.20
±
ij
0
0.2
0.80±0.20
0.50±0.20
2.54typ
2.54typ
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͦ͑͡͡