HCS70R600S

BVDSS = 700 V
RDS(on) typ = 0.54 ȍ
HCS70R600S
ID = 7.3 A
650V N-Channel Super Junction MOSFET
TO-220F
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
1
2
3
1.Gate 2. Drain 3. Source
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 16 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ7\S#9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
VDSS
TC=25୅ unless otherwise specified
Parameter
Drain-Source Voltage
Value
Units
700
V
Drain Current
– Continuous (TC = 25୅)
7.3 *
A
Drain Current
– Continuous (TC = 100୅)
4.6 *
A
IDM
Drain Current
– Pulsed
22 *
A
VGS
Gate-Source Voltage
Static
ρ20
V
AC (f>1 Hz)
ρ30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
120
mJ
IAR
Avalanche Current
(Note 1)
2.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
0.5
mJ
dv/dt
Peak Diode Recovery dv/dt
15
V/ns
PD
Power Dissipation (TC = 25୅)
- Derate above 25୅
30
W
0.24
W
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
୅
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
୅
ID
(Note 1)
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RșJC
Junction-to-Case
--
4.2
RșJA
Junction-to-Ambient
--
60.5
Units
୅/W
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HCS70R600S
November 2014
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
2.8
--
4.2
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3.5 A
--
0.54
0.6
Ÿ
VGS = 0 V, ID = 250 Ꮃ
700
--
--
V
VDS = 700 V, VGS = 0 V
--
--
10
Ꮃ
VDS = 560 V, TJ = 125୅
--
--
100
Ꮃ
VGS = ρ20 V, VDS = 0 V
--
--
ρ100
Ꮂ
--
500
--
Ꮔ
--
250
--
Ꮔ
--
7
--
Ꮔ
--
4
--
Ÿ
--
20
--
Ꭸ
--
20
--
Ꭸ
--
60
--
Ꭸ
--
20
--
Ꭸ
--
16
--
nC
--
4.0
--
nC
--
5.5
--
nC
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 350 V, ID = 7.3 A,
RG = 25 Ÿ
VDS = 560 V, ID = 7.3 A,
VGS = 10 V
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
7.3
ISM
Pulsed Source-Drain Diode Forward Current
--
--
22
VSD
Source-Drain Diode Forward Voltage
IS = 7.3 A, VGS = 0 V
--
--
1.3
V
trr
Reverse Recovery Time
--
250
--
Ꭸ
Qrr
Reverse Recovery Charge
IS = 3.5 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
2
--
uC
A
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=2A, VDD=50V, RG=25:, Starting TJ =25qC
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡
HCS70R600S
Electrical Characteristics TJ=25 qC
HCS70R600S
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
101
10
ID, Drain Current [A]
ID, Drain Current [A]
Top :
25oC
1
150oC
-25oC
* Notes :
1. VDS= 30V
2. 300us Pulse Test
* Notes :
1. 300us Pulse Test
2. TC = 25oC
100
100
0.1
2
101
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
IDR, Reverse Drain Current [A]
RDS(ON) [:],
Drain-Source On-Resistance
1.6
1.2
VGS = 10V
0.8
VGS = 20V
0.4
10
1
150oC
25oC
* Notes :
1. VGS= 0V
2. 300us Pulse Test
Note : TJ = 25oC
0.0
0
4
8
12
0.1
0.0
16
0.2
ID, Drain Current [A]
Capacitances [pF]
3000
Coss
2000
1000
* Note ;
1. VGS = 0 V
2. f = 1 MHz
Ciss
VDS = 140V
VDS = 350V
10
VDS = 560V
8
6
4
2
Note : ID = 7.3A
Crss
0
10-1
1.2
12
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
4000
0.4
0.6
0.8
VSD, Source-Drain
Voltage
[V]
0
100
101
0
3
6
9
12
15
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
18
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡
(continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
1.2
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HCS70R600S
Typical Characteristics
1.1
1.0
0.9
Note :
1. VGS = 0 V
2. ID = 250PA
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
Note :
1. VGS = 10 V
2. ID = 3.5 A
0.5
0.0
-100
200
-50
0
100
150
200
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
102
8
Operation in This Area
is Limited by R DS(on)
10 Ps
100 Ps
1 ms
10 ms
100 ms
DC
100
10-1
6
ID, Drain Current [A]
101
* Notes :
1. TC = 25 oC
4
2
2. TJ = 150 oC
3. Single Pulse
10-2
10-1
100
101
102
0
25
103
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
ZTJC(t), Thermal Response
ID, Drain Current [A]
50
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
100
0.2
* Notes :
1. ZTJC(t) = 4.2 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.1
0.05
-1
10
0.02
PDM
0.01
t1
single pulse
-2
10
10-5
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡
HCS70R600S
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
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HCS70R600S
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡
HCS70R600S
Package Dimension
{vTYYWmG
±0.20
±0.20
2.54±0.20
0.70±0.20
6.68±0.20
0
12.42±0.20
3.30±0.20
2.76±0.20
1.47max
9.75±0.20
15.87±0.20
±
ij
.20
0.80±0.20
0.50±0.20
2.54typ
2.54typ
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡