BVDSS = 900 V RDS(on) typ = 1.95 ȍ HFW6N90 / HFI6N90 ID = 6.0 A 900V N-Channel MOSFET D2-PAK I2-PAK HFW6N90 HFI6N90 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.95 ȍ7\S#9GS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25 unless otherwise specified Parameter Value Units 900 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25ఁ͚͑ 6.0 A Drain Current – Continuous (TC = 100ఁ͚͑ 3.8 A IDM Drain Current – Pulsed 24 A VGS Gate-Source Voltage ρ30 V EAS Single Pulsed Avalanche Energy (Note 2) 650 mJ IAR Avalanche Current (Note 1) 6.0 A EAR Repetitive Avalanche Energy (Note 1) 16.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25ଇ) * 3.13 W Power Dissipation (TC = 25ఁ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑ 167 W 1.33 W/ఁ͑ -55 to +150 ఁ͑ 300 ఁ͑ (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Typ. Max. RșJC Symbol Junction-to-Case Parameter -- 0.75 RșJA Junction-to-Ambient* -- 40 RșJA Junction-to-Ambient -- 62.5 Units ఁ͠Έ͑ * When mounted on the minimum pad size recommended (PCB Mount) క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡ HFW6N90_HFI6N90 March 2013 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ͑ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 3.0 A͑ -- 1.95 2.4 ͑ש VGS = 0 V, ID = 250 Ꮃ͑ 900 -- -- V ID = 250 Ꮃ͑͝ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ͑ -- 1.03 -- ·͠ఁ͑ VDS = 900 V, VGS = 0 V͑ -- -- 1 Ꮃ͑ VDS = 720 V, TC = 125ఁ͑ -- -- 10 Ꮃ͑ Off Characteristics BVDSS Drain-Source Breakdown Voltage ԩBVDSS Breakdown Voltage Temperature Coefficient /ԩTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 Ꮂ͑ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 Ꮂ͑ -- 1550 2010 Ꮔ͑ -- 110 145 Ꮔ͑ -- 15 20 Ꮔ͑ -- 40 80 Ꭸ͑ -- 120 240 Ꭸ͑ -- 60 120 Ꭸ͑ -- 70 140 Ꭸ͑ -- 35 45 Οʹ͑ -- 10 -- Οʹ͑ -- 13 -- Οʹ͑ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz͑ Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 450 V, ID = 6.0 A, RG = 25 ͑ש ͑ ͙͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑ͿΠΥΖ͚͑ͥͦ͑͝ VDS = 720V, ID = 6.0 A, VGS = 10 V ͙ͿΠΥΖ͚͑ͥͦ͑͝ Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 6.0 ISM Pulsed Source-Drain Diode Forward Current -- -- 24 VSD Source-Drain Diode Forward Voltage IS = 6.0 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 780 -- Ꭸ͑ Qrr Reverse Recovery Charge IS = 6.0 A, VGS = 0 V diF/dt = 100 A/ȝV (Note 4) -- 9.0 -- ȝ& A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=34mH, IAS=6.0A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD$di/dt$ȝV, VDD%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ȝV'XW\&\FOH 5. Essentially Independent of Operating Temperature క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡ HFW6N90_HFI6N90 Electrical Characteristics TC=25 qC HFW6N90_HFI6N90 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 0 1 10 ID, Drain Current [A] 1 10 10 -1 10 150oC o 25 C o -55 C 0 10 䈜㻌㻺㼛㼠㼑㼟㻌㻦 ȝ V3XOVH7HVW 2. TC = 25 䉝 -1 -2 10 䈜㻌㻺㼛㼠㼑㼟㻌㻦 1. VDS = 50V ȝ V3XOVH7HVW 10 -1 0 10 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 1 4.0 IDR, Reverse Drain Current [A] RDS(ON)>ȍ @ Drain-Source On-Resistance 4.5 VGS = 10V 3.5 VGS = 20V 3.0 2.5 2.0 䈜㻌㻺㼛㼠㼑㻌㻦㻌㼀J = 25 䉝 1.5 10 0 10 150 䉝 䈜㻌㻺㼛㼠㼑㼟㻌㻦 1. VGS = 0V ȝ V3XOVH7HVW -1 0 3 6 9 12 15 10 18 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] ID, Drain Current [A] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 12 2500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 1500 1000 Coss 䈜㻌㻺㼛㼠㼑㼟㻌㻦 1. VGS = 0 V 2. f = 1 MHz 500 Crss 0 -1 10 VDS = 180V VGS, Gate-Source Voltage [V] 2000 Capacitance [pF] 25䉝 10 VDS = 720V 8 6 4 2 䈜㻌㻺㼛㼠㼑㻌㻦㻌㻵D = 6.0A 0 0 10 VDS = 450V 1 10 0 5 10 15 20 25 30 35 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 40 క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡ (continued) 1.2 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage HFW6N90_HFI6N90 Typical Characteristics 1.1 1.0 䈜㻌㻺㼛㼠㼑㼟㻌㻦 1. VGS = 0 V 2. ID ȝ $ 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 䈜㻌㻺㼛㼠㼑㼟㻌㻦 1. VGS = 10 V 2. ID = 3.0 A 0.5 0.0 -100 200 -50 0 150 200 Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 6 2 10 Operation in This Area is Limited by R DS(on) 10 us 10 ID, Drain Current [A] 100 us 1 ms 1 10 ms DC 0 10 -1 10 4 2 䈜㻌㻺㼛㼠㼑㼟㻌㻦 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 25 -2 0 10 1 2 10 3 10 10 50 75 100 125 150 TC, Case Temperature [ 䉝㼉 VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 0 10 D=0.5 Zș -&(t), Thermal Response ID, Drain Current [A] 100 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] 10 50 o o 0.2 䈜㻌㻺㼛㼠㼑㼟㻌㻦 1. Zș -&(t) = 0.75 䉝㻛㼃 㻌㻹㼍㼤㻚 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zș -&(t) -1 10 0.1 0.05 PDM 0.02 0.01 t1 single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 t2 0 10 1 10 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡ HFW6N90_HFI6N90 Fig 12. Gate Charge Test Circuit & Waveform .ȍ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡ HFW6N90_HFI6N90 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡ HFW6N90_HFI6N90 Package Dimension క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡ HFW6N90_HFI6N90 Package Dimension క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡