BVDSS = 600 V RDS(on) typ = 0.17 ȍ HCH20NT60V ID = 20 A 600V N-Channel Super Junction MOSFET TO-3P FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1 2 3 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.17 ȍ7\S#9GS=10V 100% Avalanche Tested RoHS Compliant Absolute Maximum Ratings Symbol VDSS TC=25 unless otherwise specified Parameter Drain-Source Voltage Value Units 600 V Drain Current – Continuous (TC = 25) 20 A Drain Current – Continuous (TC = 100) 12.5 A IDM Drain Current – Pulsed 60 A VGS Gate-Source Voltage ρ30 V EAS Single Pulsed Avalanche Energy (Note 2) 500 mJ IAR Avalanche Current (Note 1) 10 A EAR Repetitive Avalanche Energy (Note 1) 1 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25) - Derate above 25 250 W 2.0 W/ TJ, TSTG Operating and Storage Temperature Range -55 to +150 TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ID (Note 1) Thermal Resistance Characteristics Symbol Parameter Typ. Max. RșJC Junction-to-Case -- 0.5 RșJA Junction-to-Ambient -- 62 Units /W క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͤ͑͝ͻΦΝΪ͑ͣͦ͑͢͡ HCH20NT60V July 2015 Device Marking Week Marking Package Packing Quantity HCH20NT60V YWWX TO-3P Tube 30 Pb Free HCH20NT60V YWWXg TO-3P Tube 30 Halogen Free Electrical Characteristics TJ=25 qC Symbol Parameter RoHS Status unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.5 -- 3.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 10 A -- 0.17 0.19 Forward Transconductance VDS = 30 V, ID = 10 A͑ -- 18.8 -- ΄͑ VGS = 0 V, ID = 250 Ꮃ 600 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VDS = 600 V, VGS = 0 V -- -- 1 Ꮃ VDS = 480 V, TC = 125 -- -- 10 Ꮃ VGS = ρ20 V, VDS = 0 V -- -- ρ100 Ꮂ VDS = 50 V, VGS = 0 V, f = 1.0 MHz -- 2140 2780 Ꮔ -- 300 390 Ꮔ -- 18 23.5 Ꮔ -- 38 86 Ꭸ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 300 V, ID = 20 A, RG = 25 (Note 4,5) VDS = 480V, ID = 20 A, VGS = 10 V (Note 4,5) Gate-Drain Charge -- 44 98 Ꭸ -- 184 378 Ꭸ -- 22 54 Ꭸ -- 54 70 nC -- 10 -- nC -- 20 -- nC Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 20 ISM Pulsed Source-Drain Diode Forward Current -- -- 60 VSD Source-Drain Diode Forward Voltage IS = 20 A, VGS = 0 V -- -- 1.2 V IS = 20 A, VGS = 0 V diF/dt = 100 A/ȝV -- 440 -- Ꭸ -- 5 -- ȝ& trr Reverse Recovery Time Qrr Reverse Recovery Charge (Note 4) A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=10mH, IAS=10A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD$, di/dt$ȝV, VDD%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ȝV'XW\&\FOH 5. Essentially Independent of Operating Temperature క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͤ͑͝ͻΦΝΪ͑ͣͦ͑͢͡ HCH20NT60V Package Marking and Ordering Information HCH20NT60V Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͤ͑͝ͻΦΝΪ͑ͣͦ͑͢͡ HCH20NT60V Typical Characteristics (continued) Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 102 20 Operation in This Area is Limited by R DS(on) 10 Ps 16 ID, Drain Current [A] DC 0 10 10-1 10-2 100 * Notes : 1. TC = 25 oC 12 8 4 2. TJ = 150 oC 3. Single Pulse 101 102 0 25 103 50 75 100 125 150 TJ, Junction Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 100 ZTJC(t), Thermal Response ID, Drain Current [A] 100 Ps 1 ms 10 ms 100 ms 101 D=0.5 10-1 * Notes : 1. ZTJC(t) = 0.5 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZTJC(t) 0.2 0.1 0.05 -2 10 10-5 PDM 0.02 0.01 single pulse 10-4 10-3 t1 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͤ͑͝ͻΦΝΪ͑ͣͦ͑͢͡ HCH20NT60V Fig 12. Gate Charge Test Circuit & Waveform .ȍ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͤ͑͝ͻΦΝΪ͑ͣͦ͑͢͡ HCH20NT60V Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͤ͑͝ͻΦΝΪ͑ͣͦ͑͢͡ HCH20NT60V Package Dimension {vTZwG 15.6±0.20 13.6±0.20 9.6±0.20 4.8±0.20 1.5±0.20 13.9±0.20 14.9±0.20 19.9±0.20 ij .20 18.7±0.20 ±0 5.45typ 3.5±0.20 3±0.20 2±0.20 1±0.20 16.5±0.20 1.4±0.20 0.6±0.20 5.45typ క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͤ͑͝ͻΦΝΪ͑ͣͦ͑͢͡