BVDSS = 600 V RDS(on) typ ȍ HFP8N60S ID = 7.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25 unless otherwise specified Parameter Value Units 600 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25ఁ͚ 7.5 A Drain Current – Continuous (TC = 100ఁ͚ 4.6 A IDM Drain Current – Pulsed 30 A VGS Gate-Source Voltage ρ30 V EAS Single Pulsed Avalanche Energy (Note 2) 230 mJ IAR Avalanche Current (Note 1) 7.5 A EAR Repetitive Avalanche Energy (Note 1) 14.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25ఁ͚ ͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ 147 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds (Note 1) 1.18 W/ఁ -55 to +150 ఁ 300 ఁ Thermal Resistance Characteristics Typ. Max. RșJC Symbol Junction-to-Case Parameter -- 0.85 RșCS Case-to-Sink 0.5 -- RșJA Junction-to-Ambient -- 62.5 Units ఁ͠Έ క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͧ͡͡ HFP8N60S Dec 2006 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 3.75 A -- 0.96 1.2 ש 600 -- -- V ID = 250 Ꮃ͑͝ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ -- 0.65 -- ·͠ఁ VDS = 600 V, VGS = 0 V -- -- 1 Ꮃ VDS = 480 V, TC = 125ఁ -- -- 10 Ꮃ Off Characteristics BVDSS Drain-Source Breakdown Voltage ԩBVDSS Breakdown Voltage Temperature Coefficient /ԩTJ IDSS Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 Ꮃ IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 Ꮂ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 Ꮂ -- 940 1220 Ꮔ -- 105 135 Ꮔ -- 13 17 Ꮔ -- 17 45 Ꭸ -- 61 130 Ꭸ -- 81 170 Ꭸ -- 65 140 Ꭸ -- 22 29 Οʹ -- 5 -- Οʹ -- 9 -- Οʹ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 300 V, ID = 7.5 A, RG = 25 ש ͙ͿΠΥΖ͚͑ͥͦ͝ VDS = 480V, ID = 7.5 A, VGS = 10 V ͙ͿΠΥΖ͚͑ͥͦ͝ Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 7.5 ISM Pulsed Source-Drain Diode Forward Current -- -- 30 VSD Source-Drain Diode Forward Voltage IS = 7.5 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 365 -- Ꭸ Qrr Reverse Recovery Charge IS = 7.5 A, VGS = 0 V diFGW $ȝV(Note 4) -- 3.4 -- ȝ& A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=7.3mH, IAS=7.5A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD$GLGW$ȝV9DD%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ȝV'XW\&\FOH 5. Essentially Independent of Operating Temperature క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͧ͡͡ HFP8N60S Electrical Characteristics TC=25 qC HFP8N60S ID, Drain Current [A] ID, Drain Current [A] Typical Characteristics VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 101 3.0 IDR, Reverse Drain Current [A] RDS(ON) [:], Drain-Source On-Resistance 3.5 2.5 VGS = 10V VGS = 20V 2.0 1.5 1.0 Note : TJ = 25oC 4 8 12 150oC 10-1 0.2 0.5 0 100 16 25oC 0.4 0.6 Note : 1. VGS = 0V 2. 250Ps Pulse Test 0.8 1.0 1.2 VSD, Source-Drain voltage [V] ID, Drain Current [A] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Capacitance [pF] VGS, Gate-Source Voltage [V] 12 VDS = 120V VDS = 300V VDS = 480V 10 8 6 4 2 * Note : ID=7.5A 0 0 4 8 12 16 20 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 24 క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͧ͡͡ (continued) 1.2 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage HFP8N60S Typical Characteristics 1.1 1.0 Note : 1. VGS = 0 V 2. ID = 250PA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Note : 1. VGS = 10 V 2. ID = 3.75 A 0.5 0.0 -100 200 -50 0 100 150 200 Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 102 50 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] 8 Operation in This Area is Limited by R DS(on) 10 Ps 100 Ps 6 ID, Drain Current [A] 1 ms 10 ms DC 100 ms 100 10-1 * Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse 10-2 0 10 101 102 4 2 0 25 103 50 75 100 125 150 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 100 D=0.5 ZTJC(t), Thermal Response ID, Drain Current [A] 101 0.2 10-1 * Notes : 1. ZTJC(t) = 0.85 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZTJC(t) 0.1 0.05 0.02 0.01 PDM single pulse -2 10 t1 10-5 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͧ͡͡ HFP8N60S Fig 12. Gate Charge Test Circuit & Waveform .ȍ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͧ͡͡ HFP8N60S Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͧ͡͡ HFP8N60S Package Dimension {vTYYWGOhP 20 4.50±0.20 1.30±0.20 6.50±0.20 0. 9.19±0.20 2.80±0.20 1.27±0.20 1.52±0.20 ± ij 2.40±0.20 3.02±0.20 13.08±0.20 15.70±0.20 9.90±0.20 0.80±0.20 2.54typ 2.54typ 0.50±0.20 క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͧ͡͡ HFP8N60S {vTYYWGOiP ±0.20 0 .2 ±0 4.57±0.20 6.30±0.20 1.27±0.20 9.14±0.20 2.74±0.20 15.44±0.20 ij 1.27±0.20 2.67±0.20 13.28±0.20 2.67±0.20 0.81±0.20 2.54typ 2.54typ 0.40±0.20 క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͧ͡͡