BVDSS = 400 V RDS(on) typ = 0.75 ȍ HFP730U ID = 6.0 A 400V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1 2 3 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.75 ȍ7\S#9GS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS TC=25 unless otherwise specified Parameter Drain-Source Voltage Value Units 400 V Drain Current – Continuous (TC = 25) 6.0 A Drain Current – Continuous (TC = 100) 3.6 A IDM Drain Current – Pulsed 24 A VGS Gate-Source Voltage ρ30 V EAS Single Pulsed Avalanche Energy (Note 2) 300 mJ IAR Avalanche Current (Note 1) 6.0 A EAR Repetitive Avalanche Energy (Note 1) 9.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25) - Derate above 25 98 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds ID (Note 1) 0.78 W/ -55 to +150 300 Thermal Resistance Characteristics Symbol Parameter RșJC Junction-to-Case RșCS Case-to-Sink RșJA Junction-to-Ambient Typ. Max. -- 1.28 0.5 -- -- 62.5 Units /W క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ΔΥ͑ͣͤ͑͢͡ HFP730U Oct 2013 Device Marking Week Marking Package Packing Quantity RoHS Status HFP730U YWWX TO-220 Tube 50 Pb Free HFP730U YWWXg TO-220 Tube 50 Halogen Free Electrical Characteristics TC=25 qC Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units 2.5 -- 4.5 V -- 0.75 1.0 400 -- -- V -- 0.5 -- V/ On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ Static Drain-Source On-Resistance VGS = 10 V, ID = 3 A Off Characteristics BVDSS Drain-Source Breakdown Voltage ǻBVDSS Breakdown Voltage Temperature Coefficient /ǻTJ IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS = 0 V, ID = 250 Ꮃ ID = 250 Ꮃ, Referenced to 25 VDS = 400 V, VGS = 0 V -- -- 1 Ꮃ VDS = 320 V, TC = 125 -- -- 10 Ꮃ VGS = ρ30 V, VDS = 0 V -- -- ρ100 Ꮂ VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 700 900 Ꮔ -- 70 90 Ꮔ -- 8.5 11 Ꮔ -- 25 60 Ꭸ -- 35 80 Ꭸ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 200 V, ID = 6.0 A, RG = 25 (Note 4,5) VDS = 320V, ID = 6.0 A, VGS = 10 V (Note 4,5) -- 60 130 Ꭸ -- 30 70 Ꭸ -- 13 17 nC -- 4 -- nC -- 4 -- nC Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 6.0 ISM Pulsed Source-Drain Diode Forward Current -- -- 24 VSD Source-Drain Diode Forward Voltage IS = 6.0 A, VGS = 0 V -- -- 1.4 V IS = 6.0 A, VGS = 0 V diF/dt = 100 A/ȝV (Note 4) -- 218 -- Ꭸ -- 1.3 -- ȝ& trr Reverse Recovery Time Qrr Reverse Recovery Charge A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=14.6mH, IAS=6.0A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD$, di/dt$ȝV, VDD%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ȝV'XW\&\FOH 5. Essentially Independent of Operating Temperature క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ΔΥ͑ͣͤ͑͢͡ HFP730U Package Marking and Odering Information HFP730U Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V 10 ID, Drain Current [A] ID, Drain Current [A] Top : 25oC 1 150oC -25oC * Notes : 1. 300us Pulse Test 2. TC = 25oC * Notes : 1. VDS= 30V 2. 300us Pulse Test 0.1 10-1 100 2 101 4 Figure 1. On Region Characteristics 8 100 IDR, Reverse Drain Current [A] 2.0 VGS = 10V 1.5 1.0 VGS = 20V 0.5 10 25oC 150oC * Notes : 1. VGS= 0V 2. 300us Pulse Test Note : TJ = 25oC 1 0.0 0.0 0 3 6 9 12 15 0.2 0.4 Ciss 800 600 Coss * Note ; 1. VGS = 0 V 2. f = 1 MHz 400 200 Crss 0 10-1 1.0 1.2 1.4 1.6 12 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 0.8 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 1200 0.6 VSD, Source-Drain Voltage [V] ID, Drain Current [A] Capacitances [pF] 10 Figure 2. Transfer Characteristics 2.5 RDS(ON) [:], Drain-Source On-Resistance 6 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] VDS = 80V VDS = 200V 10 VDS = 320V 8 6 4 2 Note : ID = 6.0A 0 100 101 0 3 6 9 12 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 15 క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ΔΥ͑ͣͤ͑͢͡ (continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage HFP730U Typical Characteristics 1.1 1.0 Note : 1. VGS = 0 V 2. ID = 250PA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Note : 1. VGS = 10 V 2. ID = 3.0 A 0.5 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 6 Operation in This Area is Limited by R DS(on) 100 Ps 100 ID, Drain Current [A] 1 ms 10 ms 100 ms DC 10-1 4 2 * Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse 10-2 100 101 102 0 25 103 50 75 100 125 150 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 100 ZTJC(t), Thermal Response ID, Drain Current [A] 101 D=0.5 * Notes : 1. ZTJC(t) = 1.28 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZTJC(t) 0.2 0.1 10-1 0.05 PDM 0.02 0.01 single pulse t1 -2 10 10-5 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ΔΥ͑ͣͤ͑͢͡ HFP730U Fig 12. Gate Charge Test Circuit & Waveform .ȍ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ΔΥ͑ͣͤ͑͢͡ HFP730U Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ΔΥ͑ͣͤ͑͢͡ HFP730U Package Dimension {vTYYWGOhPG 0 4.50±0.20 1.30±0.20 6.50±0.20 ij .2 9.19±0.20 2.80±0.20 1.27±0.20 1.52±0.20 ±0 2.40±0.20 3.02±0.20 13.08±0.20 15.70±0.20 9.90±0.20 0.80±0.20 2.54typ 2.54typ 0.50±0.20 క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ΔΥ͑ͣͤ͑͢͡ HFP730U Package Dimension {vTYYWGOiPG ±0.20 0 .2 ±0 4.57±0.20 6.30±0.20 1.27±0.20 9.14±0.20 2.74±0.20 15.44±0.20 ij 1.27±0.20 2.67±0.20 13.28±0.20 2.67±0.20 0.81±0.20 2.54typ 2.54typ 0.40±0.20 క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ΔΥ͑ͣͤ͑͢͡