HFD5N40_HFU5N40

BVDSS = 400 V
RDS(on) typ ȍ
HFD5N40 / HFU5N40
ID = 3.4 A
400V N-Channel MOSFET
D-PAK
I-PAK
2
FEATURES
1
1
2
3
‰ Originative New Design
3
HFD5N40
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
HFU5N40
1.Gate 2. Drain 3. Source
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 13 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ7\S#9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
TC=25୅ unless otherwise specified
Parameter
Value
Units
400
V
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25ଇ)
3.4
A
Drain Current
– Continuous (TC = 100ଇ)
2.15
A
IDM
Drain Current
– Pulsed
13.6
A
VGS
Gate-Source Voltage
ρ30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
510
mJ
IAR
Avalanche Current
(Note 1)
3.4
A
EAR
Repetitive Avalanche Energy
(Note 1)
4.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TA = 25ഒ͚
2.5
W
Power Dissipation (TC = 25ഒ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑- Derate above 25ഒ
45
W
0.36
W/ఁ͑
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
ఁ͑
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
ఁ͑
(Note 1)
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RșJC
Junction-to-Case
--
2.78
RșJA
Junction-to-Ambient*
--
50
RșJA
Junction-to-Ambient
--
110
Units
ఁ͠Έ͑
* When mounted on the minimum pad size recommended (PCB Mount)
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͡͡
HFD5N40_HFU5N40
July 2005
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ͑
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 1.7 A͑
--
1.27
1.6
‫͑ש‬
VGS = 0 V, ID = 250 Ꮃ͑
400
--
--
V
ID = 250 Ꮃ, Referenced to25ଇ
--
0.38
--
·͠ఁ͑
VDS = 400 V, VGS = 0 V͑
--
--
1
Ꮃ͑
VDS = 320 V, TC = 125ఁ͑
--
--
10
Ꮃ͑
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ԩBVDSS Breakdown Voltage Temperature
Coefficient
/ԩTJ
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
Ꮂ͑
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
Ꮂ͑
--
450
590
Ꮔ͑
--
70
90
Ꮔ͑
--
10
17
Ꮔ͑
--
15
30
Ꭸ͑
--
70
140
Ꭸ͑
--
30
60
Ꭸ͑
--
40
80
Ꭸ͑
--
13
17
Οʹ͑
--
4.0
--
Οʹ͑
--
6.0
--
Οʹ͑
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz͑
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 200 V, ID = 4.5 A,
RG = 25 ‫͑ש‬
͑
͙͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑ͿΠΥΖ͚͑ͥͦ͑͝
VDS = 320 V, ID = 4.5 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͑͝
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
3.4
ISM
Pulsed Source-Drain Diode Forward Current
--
--
13.6
VSD
Source-Drain Diode Forward Voltage
IS = 3.4 A, VGS = 0 V
--
--
1.5
V
trr
Reverse Recovery Time
--
190
--
Ꭸ͑
Qrr
Reverse Recovery Charge
IS = 4.5 A, VGS = 0 V
diFGW $ȝV(Note 4)
--
1.0
--
ȝ&
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=44mH, IAS=4.5A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͡͡
HFD5N40_HFU5N40
Electrical Characteristics TC=25 qC
HFD5N40_HFU5N40
ID, Drain Current [A]
ID, Drain Current [A]
Typical Characteristics
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
RDS(ON)[Ÿ@
Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
Figure 2. Transfer Characteristics
ID, Drain Current [A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800
Capacitances [pF]
700
Ciss
600
500
Coss
400
300
䈜㻌㻺㼛㼠㼑㻌㻧
1. VGS = 0 V
2. f = 1 MHz
Crss
200
12
VDS = 80V
VGS, Gate-Source Voltage [V]
900
10
VDS = 200V
VDS = 320V
8
6
4
2
100
* Note : ID = 4.5A
0
-1
10
0
10
1
10
0
0
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
14
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͡͡
HFD5N40_HFU5N40
Typical Characteristics
(continued)
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
3.0
2.5
2.0
1.5
1.0
Note :
1. VGS = 10 V
2. ID = 2.25 A
0.5
0.0
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
4
Operation in This Area
is Limited by R DS(on)
10 Ps
ID, Drain Current [A]
100 Ps
1 ms
10 ms
100 ms
100
DC
* Notes :
1. TC = 25 oC
3
2
1
2. TJ = 150 oC
3. Single Pulse
10-1
100
101
102
0
25
103
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Zș -&(t), Thermal Response
ID, Drain Current [A]
101
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
0
10
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. Zș -&(t) = 2.78 䉝㻛㼃 㻌㻹㼍㼤㻚
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zș -&(t)
0.2
0.1
0.05
-1
PDM
0.02
0.01
10
t1
single pulse
-5
10
-4
10
-3
10
-2
10
-1
10
t2
0
10
1
10
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͡͡
HFD5N40_HFU5N40
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͡͡
HFD5N40_HFU5N40
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͡͡
HFD5N40_HFU5N40
Package Dimension
{vTY\YG
2.3±0.1
6.6±0.2
1.2±0.3
9.7+0.5
-0.3
2.7±0.3
0.5±0.05
5.6±0.2
1±0.2
5.35±0.15
1.2±0.3
0.05+0.1
-0.05
0.8±0.2
0.6±0.2
0.5+0.1
-0.05
2.3typ
2.3typ
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͡͡
HFD5N40_HFU5N40
{vTY\XG
2.3±0.1
6.6±0.2
5.35±0.15
0.75±0.15
0.8±0.15
0.6±0.1
2.3typ
7±0.2
^U_
±0.3
7.5·WU[G
5.6±0.2
0.5±0.05
0.5+0.1
-0.05
1.2±0.3
2.3typ
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͡͡