RENESAS 2SC5508-T2B-A

Preliminary Data Sheet
2SC5508
NPN SILICON RF TRANSISTOR
R09DS0055EJ0200
Rev.2.00
Mar 5, 2013
FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
•
•
•
•
•
<R>
Ideal for low-noise, high-gain amplification applications
NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz
fT = 25 GHz technology adopted
Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
Order Number
Quantity
Package
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
2SC5508
2SC5508-A
50 pcs (Non reel)
2SC5508-T2
2SC5508-T2-A
3 kpcs/reel
2SC5508-T2B
2SC5508-T2B-A
15 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face
the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TC = 25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PtotNote
Tj
Tstg
Ratings
15
3.3
1.5
35
115
150
−65 to +150
Unit
V
V
V
mA
mW
°C
°C
Note Free air.
THERMAL RESISTANCE
Parameter
Junction to Case Resistance
Junction to Ambient Resistance
Symbol
Rth j-c
Rth j-a
Ratings
150
650
Unit
°C /W
°C /W
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0055EJ0200 Rev.2.00
Mar 5, 2013
Page 1 of 8
2SC5508
Chapter Title
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Symbol
ICBO
IEBO
hFENote 1
fT
|S21e|2
NF
Conditions
MIN.
TYP.
MAX.
Unit
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 2 V, IC = 5 mA
–
–
50
–
–
70
200
200
100
nA
nA
–
VCE = 3 V, IC = 30 mA, f = 2 GHz
VCE = 2 V, IC = 20 mA, f = 2 GHz
20
14
25
17
–
–
GHz
dB
–
1.1
1.5
dB
–
–
–
–
0.18
19
20
11
0.24
–
–
–
pF
dB
dB
dBm
–
22
–
dBm
Reverse Transfer Capacitance
Maximum Available Power Gain
Maximum Stable Power Gain
Cre Note 2
MAG Note 3
MSG Note 4
Gain 1 dB Compression Output
Power
PO (1 dB)
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
VCB = 2 V, IE = 0, f = 1 MHz
VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 2 V, IC = 20 mA Note 5, f = 2 GHz
3rd Order Intermodulation
Distortion Output Intercept Point
OIP3
VCE = 2 V, IC = 20 mA Note 5, f = 2 GHz
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG = S21 (K – √ (K2 – 1) )
S12
4. MSG =
S21
S12
5. Collector current when PO (1 dB) is output
hFE CLASSIFICATION
Rank
FB/YFB
Marking
hFE Value
T79
50 to 100
R09DS0055EJ0200 Rev.2.00
Mar 5, 2013
Page 2 of 8
2SC5508
Chapter Title
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Thermal/DC Characteristics
TOTAL POWER DISSIPATION vs. AMBIENT
TEMPERATURE, CASE TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
Ptot-TA: Free air
Ptot-TA: Mounted on ceramic board
(15 mm × 15 mm, t = 0.6 mm)
Ptot-TC: When case temperature
is specified
200
Collector Current IC (mA)
Total Power Dissipation Ptot (mW)
250
150
100
50
0
0
25
50
75
100
125
VCE = 2 V
40
30
20
10
0
150
0.2
0.4
0.6
0.8
1.0
Ambient Temperature TA (˚C), Case Temperature TC (˚C)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1.2
200
50
VCE = 2 V
40
500 μ A
450 μ A
400 μ A
350 μ A
300 μ A
250 μ A
200 μ A
150 μ A
100 μ A
IB = 50 μA
30
20
10
0
DC Current Gain hFE
Collector Current IC (mA)
100
0
1
2
3
4
10
1
0.001
5
0.01
Collector to Emitter Voltage VCE (V)
0.1
1
10
100
Collector Current IC (mA)
Capacitance/fT Characteristics
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
0.50
f = 1 MHz
Gain Bandwidth Product fT (GHz)
Reverse Transfer Capacitance Cre (pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.40
0.30
0.20
0.10
0
0
1.0
2.0
3.0
4.0
5.0
Collector to Base Voltage VCB (V)
VCE = 3 V
f = 2 GHz
25
20
15
10
5
0
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0055EJ0200 Rev.2.00
Mar 5, 2013
Page 3 of 8
2SC5508
Chapter Title
Gain Characteristics
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
VCE = 2 V
IC = 20 mA
35
MSG
30
25
MAG
|S21e|2
20
15
10
5
0
0.1
1.0
10.0
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Stable Power Gain MSG (dB)
30
25
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
f = 1 GHz
VCE = 2 V
MSG
20
|S21e|2
15
10
5
0
1
10
30
25
f = 2 GHz
VCE = 2 V
MAG
20
MSG
|S21e|2
15
10
100
5
0
1
10
Collector Current IC (mA)
100
Collector Current IC (mA)
Output Characteristics
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
20
20
125
Pout
10
75
5
50
IC
0
25
0
–15
–10
–5
0
5
Input Power Pin (dBm)
Output Power Pout (dBm)
100
Collector Current IC (mA)
Output Power Pout (dBm)
15
–5
–20
125
f = 2 GHz
VCE = 2 V
f = 1 GHz
VCE = 2 V
Pout
15
100
10
75
5
50
IC
0
–5
–20
25
–15
–10
–5
0
Collector Current IC (mA)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
0
5
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0055EJ0200 Rev.2.00
Mar 5, 2013
Page 4 of 8
2SC5508
Chapter Title
Noise Characteristics
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Ga
6
25
5
4
20
3
15
2
10
NF
0
1
10
15
2
1
0
100
0
5
1
Ga
3
6
25
5
20
15
2
NF
1
0
30
1
10
10
Noise Figure NF (dB)
4
0
100
10
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Associated Gain Ga (dB)
Noise Figure NF (dB)
5
10
NF
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
f = 2.0 GHz
VCE = 2 V
20
3
Collector Current IC (mA)
6
25
Ga
4
5
1
30
f = 1.5 GHz
VCE = 2 V
4
30
25
20
Ga
3
15
2
5
1
0
100
0
Collector Current IC (mA)
f = 2.5 GHz
VCE = 2 V
NF
10
Associated Gain Ga (dB)
Noise Figure NF (dB)
5
30
Noise Figure NF (dB)
f = 1.0 GHz
VCE = 2 V
Associated Gain Ga (dB)
6
Associated Gain Ga (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
1
10
0
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
<R>
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
R09DS0055EJ0200 Rev.2.00
Mar 5, 2013
Page 5 of 8
2SC5508
Chapter Title
EQUAL NF CIRCLE
VCE = 2 V
IC = 5 mA
f = 1 GHz
VCE = 2 V
IC = 5 mA
f = 2 GHz
Unstable area
Unstable area
NFmin = 1.0 dB
Γopt
NFmin = 1.1 dB
Γopt
1.5 dB
1.5 dB
2.0
3.0
dB
2.5 dB
dB
4.0 d3.5 dB
B
R09DS0055EJ0200 Rev.2.00
Mar 5, 2013
2.0
3.0
dB
2.5 dB
dB
3.5
4.0 dBdB
Page 6 of 8
2SC5508
Chapter Title
NOISE PARAMETERS
VCE = 2 V, IC = 3 mA
VCE = 2 V, IC = 5 mA
Γopt
f
(GHz)
NFmin
(dB)
Ga
(dB)
MAG.
ANG.
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
0.78
0.80
0.82
0.93
1.00
1.02
1.04
1.15
21.4
20.7
20.0
17.0
15.6
15.2
14.8
13.5
0.26
0.26
0.26
0.23
0.20
0.19
0.19
0.20
31.7
32.7
34.7
57.0
78.0
86.0
94.2
138.3
Γopt
Rn/50
f
(GHz)
NFmin
(dB)
Ga
(dB)
MAG.
ANG.
0.17
0.17
0.17
0.16
0.14
0.14
0.13
0.10
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
0.93
0.94
0.96
1.03
1.07
1.09
1.10
1.17
22.5
21.8
21.1
18.1
16.7
16.3
15.9
14.3
0.12
0.12
0.12
0.09
0.08
0.08
0.08
0.14
28.1
28.8
31.7
71.1
106.2
118.5
130.5
–179.7
VCE = 2 V, IC = 10 mA
Rn/50
0.15
0.15
0.15
0.14
0.13
0.13
0.12
0.11
VCE = 2 V, IC = 20 mA
Γopt
f
(GHz)
NFmin
(dB)
Ga
(dB)
MAG.
ANG.
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
1.28
1.29
1.30
1.37
1.41
1.43
1.44
1.51
23.7
23.0
22.3
19.3
17.8
17.3
16.9
15.3
0.07
0.07
0.08
0.13
0.16
0.17
0.19
0.25
–159.4
–157.5
–155.7
–149.2
–146.1
–145.0
–143.9
–136.7
R09DS0055EJ0200 Rev.2.00
Mar 5, 2013
Γopt
Rn/50
f
(GHz)
NFmin
(dB)
Ga
(dB)
MAG.
ANG.
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
1.59
1.61
1.63
1.72
1.78
1.79
1.81
1.90
24.5
23.7
23.0
19.9
18.3
17.9
17.5
15.8
0.26
0.26
0.27
0.30
0.33
0.34
0.35
0.40
–158.1
–155.5
–153.1
–142.6
–137.3
–135.7
–134.1
–126.5
Rn/50
0.12
0.13
0.13
0.14
0.15
0.06
0.16
0.18
Page 7 of 8
2SC5508
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT: mm)
(Top View)
(Bottom View)
0.65
1.30
3
0.30+0.1
–0.05
0.30+0.1
–0.05
4
1
(1.05)
0.65
0.60
0.65
T79
1.25
2
1.25±0.1
0.30+0.1
–0.05
0.40+0.1
–0.05
2.05±0.1
2.0±0.1
0.11+0.1
–0.05
0.5
0.59±0.05
<R>
Chapter Title
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
R09DS0055EJ0200 Rev.2.00
Mar 5, 2013
Page 8 of 8
Revision History
2SC5508 Data Sheet
Rev.
Date
Page
1.00
2.00
Sep 9, 2004
Mar 5, 2013
−
Throughout
p.1
p.5
p.8
Description
Summary
First edition issued
Renesas format is applied to this data sheet.
ORDERING INFORMATION is modified.
Up to date S-PARAMETERS.
Added a drawing backside to PACKAGE DIMENSIONS.
All trademarks and registered trademarks are the property of their respective owners.
C-1
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[Colophon 2.2]