SENSITRON SEMICONDUCTOR SRADM1002 TECHNICAL DATA DATA SHEET 5311, REV. A HERMETIC RAD HARD POWER MOSFET N-CHANNEL QUAD FEATURES: Four 250 Volt, 0.36 Ohm, 4.4A RAD HARD MOSFETs Single Event Effect (SEE) hardened, LET 55, Range: 90μm o VGS = -15V, VDS = 250V o VGS = -20V, VDS = 160V Total Ionization Dose (TID) hardened, 100kRad (Level R) Fast Switching Low RDS (on) rd Pin compatible with IRHQ57214SE, with 1/3 the RDS(ON) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE ON-STATE DRAIN CURRENT PULSED DRAIN CURRENT (LIMITED BY TJMAX) OPERATING AND STORAGE TEMPERATURE TOTAL DEVICE DISSIPATION THERMAL RESISTANCE, JUNCTION TO CASE AVALANCE ENERGY SYMBOL VGS ID IDM TOP/TSTG PD RthJC EAS MIN. -55 - TYP. - MAX. 20 4.4 18 +150 27 4.7 20 UNITS Volts Amps Amps C Watts C/W mJ SYMBOL BVDSS MIN. 250 TYP. 295 MAX. - UNITS Volts 2.0 0.36 3.4 0.45 0.95 4.0 td(ON) tr td(OFF) tf VSD - 10 10 15 11 0.95 15 250 100 -100 14 14 20 16 1.3 Volts trr - 210 250 nsec Ciss Coss Crss - 580 45 2.3 700 60 3 pF ELECTRICAL CHARACTERISTICS CHARACTERISTIC DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = 250A STATIC DRAIN TO SOURCE ON STATE RESISTANCE VGS = 10V, ID = 3A VGS = 10V, ID = 3A, TA = 125C GATE THRESHOLD VOLTAGE VDS ≥ VGS, ID = 1mA ZERO GATE VOLTAGE DRAIN CURRENT VDS = 200V, VGS = 0V VDS = 200V, VGS = 0V, TA = 125C GATE TO SOURCE LEAKAGE FORWARD VGS = 20V GATE TO SOURCE LEAKAGE REVERSE VGS = -20V TURN ON DELAY TIME VDD = .5VDS, RISE TIME ID = 3A, TURN OFF DELAY TIME RG = 4.7 FALL TIME DIODE FORWARD VOLTAGE IS = 4.4A VGS = 0V REVERSE RECOVERY TIME VDD = .5VDS, If = 4.4A INPUT CAPACITANCE VGS = 0 V OUTPUT CAPACITANCE VDS = 100 V REVERSE TRANSFER CAPACITANCE f = 1.0MHz RDS(ON) VGS(th) IDSS IGSS Volts A nA nsec **This product is subject to the International Traffic in Arms Regulations (ITAR), 22 C.F.R. Parts 120 - 130, and may not be exported without the appropriate U.S. Department of State authorization. ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com [email protected] SENSITRON SEMICONDUCTOR SRADM1002 TECHNICAL DATA DATA SHEET 5311, REV. A MECHANICAL DIMENSIONS: in Inches / mm .011 (.279 .009 .228) .040(1.02) x 45 o Chamfer 3 Plcs .458 (11.7 .442 11.2) LCC-28T .030(.762)Typ .030Typ (.762) .310 (7.88 .290 7.36) .040(1.02) x 45 o Pin 26 Pin 1 Chamfer 3 Plcs .050(1.27)Typ .305 (7.75 .295 7.49) .035(.889)Typ .010(.254)Typ .095(2.42)Max PINOUT TABLE QUAD MOSFET LCC-28T MOSFET 1 MOSFET 2 MOSFET 3 MOSFET 4 GATE DRAIN SOURCE PIN 1 PIN 8 PIN 15 PIN 22 PINS 5, 6 PINS 12, 13 PINS 19, 20 PINS 26, 27 PINS 2, 3 PINS 9, 10 PINS 16, 17 PINS 23, 24 Note: Pins 4, 7, 11, 14, 18, 21, 25 and 28 are Not Connected. DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com [email protected]