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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1914 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit : mm) DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 2.8 ±0.2 The µPA1914 is a switching device which can be driven directly by a 4 V power source. The µPA1914 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 57 mΩ MAX. (VGS = –10 V, ID = –2.5 A) RDS(on)2 = 86 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)3 = 96 mΩ MAX. (VGS = –4.0 V, ID = –2.5A) 0 to 0.1 0.95 0.65 0.95 1.9 0.9 to 1.1 2.9 ±0.2 1, 2, 5, 6 : Drain 3 : Gate 4 : Source ORDERING INFORMATION PART NUMBER PACKAGE µPA1914TE SC-95 (Mini Mold Thin Type) EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS –30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±4.5 A ID(pulse) ±18 A PT1 0.2 W PT2 2 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation Total Power Dissipation Note2 Body Diode Gate Gate Protection Diode Source Marking: TF Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on FR-4 Board, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13810EJ2V0DS00 (2nd edition) Date Published May 2001 NS CP(K) Printed in Japan The mark ! shows major revised points. © 1998, 1999 µPA1914 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = –30 V, VGS = 0 V –10 µA Gate Leakage Current IGSS VGS = ±16 V, VDS = 0 V ±10 µA VGS(off) VDS = –10 V, ID = –1 mA –1.0 –1.6 –2.5 V | yfs | VDS = –10 V, ID = –2.5 A 1 7.1 RDS(on)1 VGS = –10 V, ID = –2.5 A 43 57 mΩ RDS(on)2 VGS = –4.5 V, ID = –2.5 A 58 86 mΩ RDS(on)3 VGS = –4.0 V, ID = –2.5 A 64 96 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = –10 V 589 pF Output Capacitance Coss VGS = 0 V 210 pF Reverse Transfer Capacitance Crss f = 1 MHz 86 pF Input Capacitance Ciss VDS = –25 V 546 pF Output Capacitance Coss VGS = 0 V 148 pF Reverse Transfer Capacitance Crss f = 1 MHz 65 pF Turn-on Delay Time td(on) VDD = –15 V 16 ns tr ID = –2.5 A 57 ns VGS(on) = –10 V 63 ns tf RG = 10 Ω 80 ns Total Gate Charge QG VDD= –24 V 11 nC Gate to Source Charge QGS ID = –4.5 A 1.5 nC Gate to Drain Charge QGD VGS = –10 V 2.8 nC Rise Time Turn-off Delay Time td(off) Fall Time Diode Forward Voltage VF(S-D) IF = 4.5 A, VGS = 0 V 0.88 V Reverse Recovery Time trr IF = 4.5 A, VGS = 0 V 22 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 11 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 PG. 90 % 90 % ID VGS 0 ID Wave Form τ τ = 1µ s Duty Cycle ≤ 1 % 10 % 0 10 % tr td(on) ton RL 50 Ω VDD 90 % VDD ID 2 VGS(on) 10 % IG = 2 mA td(off) tf toff Data Sheet D13810EJ2V0DS µPA1914 TYPICAL CHARACTERISTICS (TA = 25°C) ! DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA −100 80 ID - Drain Current - A dT - Derating Factor - % 100 60 40 ID (pulse) d ite im )L (on DS −10 R −0.1 PW ID (DC) =1 ms =1 0 PW ms = PW 100 ms =5 s −1 20 PW Single Pulse Mounted on 250mm2 x 35µm Copper Pad Connected to Drain Electrode in 50mm x 50mm x 1.6mm FR-4 Board 0 30 60 120 90 TA - Ambient Temperature - ˚C −0.01 −0.1 150 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = −4.5 V VGS = −4.0 V −4 ID - Drain Current - A ID - Drain Current - A VGS = −10 V −8 VDS = −10 V −1 −0.1 TA = 125˚C TA = 75˚C −0.01 TA = 25˚C TA = −25˚C −0.001 −0.0001 0 0.0 −0.2 −0.6 −0.4 −0.8 −1.0 −0.00001 −0.5 −1.0 VDS = −10 V ID = − 1 mA 100 −1.5 0 50 100 −2.0 −2.5 −3.0 −3.5 −4.0 FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE −1.0 −50 −1.5 VGS - Gate to Sorce Voltage - V VDS - Drain to Source Voltage - V −2.0 −100 −10 VGS = −20 V −12 −10 TRANSFER CHARACTERISTICS −100 −20 −16 −1 VDS - Drain to Source Voltage - V 150 VDS = −10V 10 TA = −25 ˚C TA = 25 ˚C TA = 75 ˚C TA = 125 ˚C 1 0.1 0.01 −0.01 Tch - Channel Temperature - ˚C −0.1 −1 −10 −100 ID - Drain Current - A Data Sheet D13810EJ2V0DS 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 120 VGS = −4.0 V 100 TA = 125˚C 80 TA = 75˚C TA = 25˚C 60 TA = −25˚C 40 −0.01 −1 −0.1 −10 −100 RDS(on) - Drain to Source On-State Resistance - mΩ RDS(on) - Drain to Source On-State Resistance - mΩ µPA1914 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = −4.5 V 80 TA = 125˚C TA = 75˚C 60 TA = 25˚C TA = −25˚C 40 −0.01 60 TA = 125˚C TA = 75˚C TA = 25˚C 40 TA = −25˚C 30 −0.01 −0.1 −1 −10 −100 RDS (on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-State Resistance - mΩ VGS = −10 V 50 100 ID = −2.5 A VGS = −4.0 V 80 VGS = −4.5 V 60 VGS = −10 V 40 20 −50 0 50 100 Tch - Channel Temperature -˚C 10000 ID = −2.5 A 80 60 40 f = 1 MHz VGS = 0V 1000 Ciss Coss 100 Crss 10 −0.1 −8 −16 −12 −4 VGS - Gate to Source Voltage - V 150 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF RDS (on) - Drain to Source On-state Resistance - mΩ 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 0 −100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID - Drain Current - A 100 −10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 70 −1 −0.1 ID - Drain Current - A −20 Data Sheet D13810EJ2V0DS −1 −10 VDS - Drain to Source Voltage - V −100 µPA1914 SWITCHING CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 IF - Source to Drain Current - A td(on), tr, td(off), tf - Switchig Time - ns 1000 tr tf 100 td(off) td(on) 10 VDD = −15V VGS(on) = −10V RG = 10Ω 1 −0.1 −1 ID - Drain Current - A 10 1 0.1 0.01 0.4 −10 0.6 0.8 1.0 1.2 VF(S-D) - Source to Drain Voltage - V DYNAMIC INPUT CHARACTERISTICS VGS - Gate to Source Voltage - V 12 ID = −4.5 A 10 VDD = −24 V −15 V −6 V 8 6 4 2 0 0 2 4 6 8 Qg - Gate Charge - nC ! 10 12 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - ˚C/W 1000 Without Board 100 Mounted on 250mm2 x 35 µm Copper Pad Connected to Drain Electrode in 50mm x 50mm x 1.6mm FR-4 Board Single Pulse 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - S Data Sheet D13810EJ2V0DS 5 µPA1914 [MEMO] 6 Data Sheet D13810EJ2V0DS µPA1914 [MEMO] Data Sheet D13810EJ2V0DS 7 µPA1914 • The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4