To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2981 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2981 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 50 mΩ MAX. (VGS = 4 V, ID = 10 A) • Low Ciss : Ciss = 860 pF TYP. • Built-in gate protection diode (TO-251) ORDERING INFORMATION PART NUMBER PACKAGE 2SK2981 TO-251 2SK2981-Z TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) (TO-252) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) ID(DC) ±20 A ID(pulse) ±80 A Total Power Dissipation (TA = 25 °C) PT1 1 W Total Power Dissipation (TC = 25 °C) PT2 20 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C Drain Current (Pulse) Note Note PW ≤ 10 µs, Duty cycle ≤ 1 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D12355EJ3V0DS00 (3rd edition) Date Published May 2001 NS CP(K) Printed in Japan The mark ! shows major revised points. © 1998 2SK2981 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 10 A 20 27 mΩ RDS(on)2 VGS = 4.5 V, ID = 10 A 30 40 mΩ RDS(on)3 VGS = 4 V, ID = 10 A 35 50 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 10 A 6.0 13.0 Drain Leakage Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz Output Capacitance Gate to Source Cut-off Voltage S 860 pF Coss 350 pF Reverse Transfer Capacitance Crss 160 pF Turn-on Delay Time td(on) ID = 10 A, VGS(on) = 10 V, VDD = 15 V 25 ns RG = 10 Ω 270 ns td(off) 65 ns tf 65 ns 20 nC Rise Time tr Turn-off Delay Time Fall Time Total Gate Charge QG Gate to Source Charge QGS 3.5 nC Gate to Drain Charge QGD 6.5 nC Body Diode forward Voltage ID = 20 A, VDD = 24 V, VGS = 10 V VF(S-D) IF = 20 A, VGS = 0 V 0.8 V Reverse Recovery Time trr IF = 20 A, VGS = 0 V 35 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 30 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG PG. VGS VGS Wave Form 0 PG. 90 % 90 % ID VGS 0 ID 10 % 0 10 % Wave Form τ τ = 1 µs Duty Cycle ≤ 1 % tr td(off) td(on) ton RL 50 Ω VDD 90 % VDD ID 2 VGS(on) 10 % IG = 2 mA tf toff Data Sheet D12355EJ3V0DS 2SK2981 TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 35 100 80 60 40 20 0 20 40 60 80 30 25 20 15 10 5 0 100 120 140 160 20 ! 40 60 80 100 120 140 160 TC - Case Temperature - ˚C TC - Case Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD BIAS SAFE OPERATING AREA 1000 Pulsed 100 ID - Drain Current - A ID - Drain Current - A 100 ID(PULSE)=80 A ) n S(o d ite Lim V) 0 =1 S RD G V (at ID(DC)=20 A 10 1 PW PW = 50 = 1 0 µs ms PW = Po PW 10 we ms =1 rD 00 iss ms ipa tio nL im ite d 80 VGS =10 V 60 4.5 V 40 4V 20 TC = 25˚C Single Pulse 0.1 0.1 1 10 100 0 1 2 3 4 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 1000 100 Pulsed TA = −25˚C 25˚C 75˚C 125˚C 10 1 0 2 4 6 8 VGS - Gate to Source Voltage - V Data Sheet D12355EJ3V0DS 3 2SK2981 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 Rth(ch-A) = 125 ˚C/W 100 10 Rth(ch-C) = 6.25 ˚C/W 1 0.1 0.01 0.001 Single Pulse TC = 25˚C 10 µ 100µ 1m 10 m 100 m 1 10 100 1000 | yfs | - Forward Transfer Admittance - S 100 10 VDS = 10 V Pulsed Tch = −25˚C 25˚C 75˚C 125˚C 1 0.1 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID- Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 Pulsed 60 VGS = 4 V 40 4.5 V 20 10 V 0 0.2 1 10 100 VGS(off) - Gate to Source Cut-off Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 60 40 ID = 10 A 20 0 10 15 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 0 − 50 0 50 100 150 Tch - Channel Temperature - ˚C ID - Drain Current - A 4 5 Data Sheet D12355EJ3V0DS SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed 80 ISD - Diode Forward Current - A 60 VGS = 4 V 4.5 V 40 10 V 20 0 ID = 10 A − 50 0 50 100 100 VGS = 10 V 10 0.1 150 0 Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHz 1000 Ciss Coss Crss 100 10 0.1 1 1.5 1.0 0.5 VSD - Source to Drain Voltage - V 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 0V 1 10 100 tr tf 100 td(off) td(on) 10 VDD = 15 V VGS = 10 V RG = 10 Ω 1 0.1 1 trr - Reverse Recovery Time - ns di/dt = 100 A/µs VGS = 0 V 100 10 1 0.1 1 10 100 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 10 100 ID - Drain Current - A VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 20 A VGS = 10 V 14 30 20 12 VGS 10 VDD = 24 V 15 V 6V 8 6 4 10 2 VDS 0 IF - Drain Current - A 3 6 9 12 15 18 21 24 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 2SK2981 0 QG - Gate Charge - nC Data Sheet D12355EJ3V0DS 5 2SK2981 PACKAGE DRAWINGS (Unit : mm) 1)TO-251 (MP-3) 2)TO-252 (MP-3Z) 1.1±0.2 +0.2 +0.2 0.5-0.1 0.5-0.1 0.75 2.3 2.3 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 +0.2 2.3±0.2 1.0 MIN. 1.8TYP. 0.5±0.1 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.7 0.8 4.3 MAX. 1.1±0.2 13.7 MIN. 3 5.5±0.2 2 7.0 MAX. 1.6±0.2 1 4 1.5-0.1 6.5±0.2 5.0±0.2 5.5±0.2 10.0 MAX. +0.2 0.5±0.1 4 2.0 MIN. 5.0±0.2 2.3±0.2 1.5-0.1 6.5±0.2 EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D12355EJ3V0DS 2SK2981 [MEMO] Data Sheet D12355EJ3V0DS 7 2SK2981 • The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4