2SK2981 DS - Renesas Electronics

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2981
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2981 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Low on-state resistance
RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 10 A)
RDS(on)3 = 50 mΩ MAX. (VGS = 4 V, ID = 10 A)
• Low Ciss : Ciss = 860 pF TYP.
• Built-in gate protection diode
(TO-251)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2981
TO-251
2SK2981-Z
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
(TO-252)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±20
A
ID(pulse)
±80
A
Total Power Dissipation (TA = 25 °C)
PT1
1
W
Total Power Dissipation (TC = 25 °C)
PT2
20
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to + 150
°C
Drain Current (Pulse)
Note
Note PW ≤ 10 µs, Duty cycle ≤ 1 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D12355EJ3V0DS00 (3rd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark ! shows major revised points.
©
1998
2SK2981
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
Drain to Source On-state Resistance
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
RDS(on)1
VGS = 10 V, ID = 10 A
20
27
mΩ
RDS(on)2
VGS = 4.5 V, ID = 10 A
30
40
mΩ
RDS(on)3
VGS = 4 V, ID = 10 A
35
50
mΩ
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 10 A
6.0
13.0
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
10
µA
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
µA
Input Capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Output Capacitance
Gate to Source Cut-off Voltage
S
860
pF
Coss
350
pF
Reverse Transfer Capacitance
Crss
160
pF
Turn-on Delay Time
td(on)
ID = 10 A, VGS(on) = 10 V, VDD = 15 V
25
ns
RG = 10 Ω
270
ns
td(off)
65
ns
tf
65
ns
20
nC
Rise Time
tr
Turn-off Delay Time
Fall Time
Total Gate Charge
QG
Gate to Source Charge
QGS
3.5
nC
Gate to Drain Charge
QGD
6.5
nC
Body Diode forward Voltage
ID = 20 A, VDD = 24 V, VGS = 10 V
VF(S-D)
IF = 20 A, VGS = 0 V
0.8
V
Reverse Recovery Time
trr
IF = 20 A, VGS = 0 V
35
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
30
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
RL
RG
PG.
VGS
VGS
Wave Form
0
PG.
90 %
90 %
ID
VGS
0
ID
10 %
0 10 %
Wave Form
τ
τ = 1 µs
Duty Cycle ≤ 1 %
tr td(off)
td(on)
ton
RL
50 Ω
VDD
90 %
VDD
ID
2
VGS(on)
10 %
IG = 2 mA
tf
toff
Data Sheet D12355EJ3V0DS
2SK2981
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
35
100
80
60
40
20
0
20
40
60
80
30
25
20
15
10
5
0
100 120 140 160
20
!
40
60
80
100 120 140 160
TC - Case Temperature - ˚C
TC - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD BIAS SAFE OPERATING AREA
1000
Pulsed
100
ID - Drain Current - A
ID - Drain Current - A
100
ID(PULSE)=80 A
)
n
S(o
d
ite
Lim V)
0
=1
S
RD G
V
(at ID(DC)=20 A
10
1
PW
PW = 50
= 1 0 µs
ms
PW
=
Po
PW
10
we
ms
=1
rD
00
iss
ms
ipa
tio
nL
im
ite
d
80
VGS =10 V
60
4.5 V
40
4V
20
TC = 25˚C
Single Pulse
0.1
0.1
1
10
100
0
1
2
3
4
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
1000
100
Pulsed
TA = −25˚C
25˚C
75˚C
125˚C
10
1
0
2
4
6
8
VGS - Gate to Source Voltage - V
Data Sheet D12355EJ3V0DS
3
2SK2981
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - ˚C/W
1 000
Rth(ch-A) = 125 ˚C/W
100
10
Rth(ch-C) = 6.25 ˚C/W
1
0.1
0.01
0.001
Single Pulse
TC = 25˚C
10 µ
100µ
1m
10 m
100 m
1
10
100
1000
| yfs | - Forward Transfer Admittance - S
100
10
VDS = 10 V
Pulsed
Tch = −25˚C
25˚C
75˚C
125˚C
1
0.1
0.1
1
10
100
RDS(on) - Drain to Source On-state Resistance - mΩ
ID- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
Pulsed
60
VGS = 4 V
40
4.5 V
20
10 V
0
0.2
1
10
100
VGS(off) - Gate to Source Cut-off Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - mΩ
PW - Pulse Width - s
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
60
40
ID = 10 A
20
0
10
15
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
ID = 1 mA
2.0
1.5
1.0
0.5
0
− 50
0
50
100
150
Tch - Channel Temperature - ˚C
ID - Drain Current - A
4
5
Data Sheet D12355EJ3V0DS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Pulsed
80
ISD - Diode Forward Current - A
60
VGS = 4 V
4.5 V
40
10 V
20
0
ID = 10 A
− 50
0
50
100
100
VGS = 10 V
10
0.1
150
0
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
VGS = 0 V
f = 1 MHz
1000
Ciss
Coss
Crss
100
10
0.1
1
1.5
1.0
0.5
VSD - Source to Drain Voltage - V
1000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
10000
0V
1
10
100
tr
tf
100
td(off)
td(on)
10
VDD = 15 V
VGS = 10 V
RG = 10 Ω
1
0.1
1
trr - Reverse Recovery Time - ns
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1
10
100
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
10
100
ID - Drain Current - A
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
ID = 20 A
VGS = 10 V
14
30
20
12
VGS
10
VDD = 24 V
15 V
6V
8
6
4
10
2
VDS
0
IF - Drain Current - A
3
6
9
12
15
18
21
24
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
2SK2981
0
QG - Gate Charge - nC
Data Sheet D12355EJ3V0DS
5
2SK2981
PACKAGE DRAWINGS (Unit : mm)
1)TO-251 (MP-3)
2)TO-252 (MP-3Z)
1.1±0.2
+0.2
+0.2
0.5-0.1
0.5-0.1
0.75
2.3 2.3
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
+0.2
2.3±0.2
1.0 MIN.
1.8TYP.
0.5±0.1
0.9
0.8
2.3 2.3 MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
0.7
0.8 4.3 MAX.
1.1±0.2
13.7 MIN.
3
5.5±0.2
2
7.0 MAX.
1.6±0.2
1
4
1.5-0.1
6.5±0.2
5.0±0.2
5.5±0.2
10.0 MAX.
+0.2
0.5±0.1
4
2.0
MIN.
5.0±0.2
2.3±0.2
1.5-0.1
6.5±0.2
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
6
Data Sheet D12355EJ3V0DS
2SK2981
[MEMO]
Data Sheet D12355EJ3V0DS
7
2SK2981
• The information in this document is current as of May, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4