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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3405 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3405 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. PART NUMBER PACKAGE 2SK3405 TO-220AB 2SK3405-ZK TO-263(MP-25ZK) 2SK3405-ZJ TO-263(MP-25ZJ) FEATURES • 4.5-V drive available • Low on-state resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 16 V, VGS = 10 V) • Built-in gate protection diode • Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25°C ) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±48 A ID(pulse) ±192 A Drain Current (Pulse) Note Total Power Dissipation (TA = 25°C) PT1 1.5 W Total Power Dissipation (TC = 25°C) PT2 50 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Note PW ≤ 10 µs, Duty Cycle ≤ 1% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14639EJ2V0DS00 (2nd edition) Date Published April 2001 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1999, 2000 2SK3405 ELECTRICAL CHARACTERISTICS(TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT 10 µA ±10 µA 2.5 V Drain Leakage Current IDSS VDS = 20 V, VGS = 0 V Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 Forward Transfer Admittance | yfs | VDS = 10 V, ID = 24 A 12.5 Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 24 A 6.5 9.0 mΩ RDS(on)2 VGS = 4.5 V, ID = 24 A 9.9 14.0 mΩ Ciss VDS = 10 V 1800 pF Input Capacitance S Output Capacitance Coss VGS = 0 V 770 pF Reverse Transfer Capacitance Crss f = 1 MHz 400 pF Turn-on Delay Time td(on) VDD = 10 V , ID = 24 A 21 ns Rise Time tr VGS(on) = 10 V 13 ns Turn-off Delay Time td(off) RG = 10 Ω Fall Time tf Total Gate Charge QG Gate to Source Charge Gate to Drain Charge 64 ns 25 ns VDD = 16 V 34 nC QGS VGS = 10 V 6.6 nC QGD ID = 48 A 11 nC Diode Forward Voltage VF(S-D) IF = 48 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 48 A, VGS = 0 V 38 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 29 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG PG. VGS VGS Wave Form 0 PG. VDD 90 % VDS Wave Form τ τ = 1 µs Duty Cycle ≤ 1 % 2 RL 50 Ω VDD 10 % VDS VGS 0 IG = 2 mA 90 % 10 % 0 tr td(off) td(on) ton tf toff Data Sheet D14639EJ2V0DS 2SK3405 TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 200 1000 Pulsed VDS = 10 V 7.0 V ID - Drain Current - A ID - Drain Current - A VGS =10 V 150 4.5 V 100 50 100 10 Tch = −50˚C −25˚C 25˚C 75˚C 150˚C 1 Pulsed 0 0 2 1 0.1 3 1 2 2.0 1.5 1.0 0.5 0 50 100 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V VDS = 10 V ID = 1 mA 0 −50 150 100 VDS = 10 V Pulsed 10 Tch = 150˚C 75˚C 25˚C −25˚C −50˚C 1 0.1 0.01 0.1 20 Pulsed ID = 48 A 24 A 10 A 10 5 0 5 10 15 VGS - Gate to Source Voltage - V 20 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0 1 10 100 ID - Drain Current - A Tch - Channel Temperature - ˚C 15 6 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2.5 5 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V 3.0 4 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 Pulsed 20 10 VGS = 10 V 7.0 V 4.5 V 0 0.1 Data Sheet D14639EJ2V0DS 1 10 100 1000 ID - Drain Current - A 3 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 18 16 14 VGS = 4.5 V 7.0 V 10 8 10 V 6 4 2 0 −50 0 100 50 Pulsed VGS = 10 V 100 4.5 V 1 0.1 0.01 0 150 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V f = 1 MHz 1000 Coss Crss 1 10 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS Ciss 100 0.1 td(off) 100 tf td(on) tr 10 1 0.1 100 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 10 10 18 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 100 A/µs VGS = 0 V 1 ID = 48 A 15 100 8 9 VGS 4 6 3 VDS 0 0 10 20 30 QG - Gate Charge - nC Data Sheet D14639EJ2V0DS 12 VDD = 16 V 10 V 4V 12 ISD - Diode Forward Current - A 4 10 1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 1 0.1 VDD = 10 V VGS = 10 V RG = 10 Ω 100 ID - Drain Current - A VDS - Drain to Source Voltage - V 1000 1.5 1 0.5 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C 10000 0V 10 40 0 VGS - Gate to Source Voltage - V 12 1000 ISD - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3405 2SK3405 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 70 100 80 60 40 20 0 0 20 40 60 80 60 50 40 30 20 10 0 0 120 140 160 100 20 Tch - Channel Temperature - ˚C ★ 40 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 1000 100 Po we r 10 Di ss ipa tio n =1 0µ s Lim ite d DC 1 0.1 PW 10 0µ s 30 0µ 1m s 3m s 10 s m s TC = 25˚C Single Pulse 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A ID(pulse) d ite V) Lim 10 ) on = S( S ID(DC) RD VG (@ 100 Rth(ch-A) = 83.3˚C/W 10 Rth(ch-C) = 2.5˚C/W 1 0.1 Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - sec Data Sheet D14639EJ2V0DS 5 2SK3405 PACKAGE DRAWINGS (Unit: mm) 10.0±0.2 1.3±0.2 No plating 0.4 8.4 TYP. 4 4 9.15±0.2 8.0 TYP. 15.5 MAX. 5.9 MIN. 10.0 4.45±0.2 1.3±0.2 0.025 to 0.25 1.3±0.2 12.7 MIN. 6.0 MAX. 1 2 3 0.5± 0.2 0.7±0.15 0 to 2.54 2.45±0.25 4.8 MAX. φ 3.6±0.2 1.35±0.3 3.0±0.3 10.6 MAX. 2)TO-263 (MP-25ZK) 15.25±0.5 1)TO-220AB (MP-25) 8o 0.25 0.5±0.2 0.75±0.1 2.54 TYP. 2.8±0.2 1 2 3 2.54 TYP. 1.Gate 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.Drain 2.5 3.Source 3)TO-263 (MP-25ZJ) 4.Fin (Drain) EQUIVALENT CIRCUIT 4.8 MAX. (10) Drain 1.3±0.2 5.7±0.4 8.5±0.2 1.0±0.5 4 1.4±0.2 0.7±0.2 2 3 2.54 TYP. 2.8±0.2 2.54 TYP. 1 Remark Body Diode Gate ) ( R 0.5 ) .8R (0 0.5±0.2 Gate Protection Diode Source 1.Gate 2.Drain 3.Source 4.Fin (Drain) The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D14639EJ2V0DS 2SK3405 [MEMO] Data Sheet D14639EJ2V0DS 7 2SK3405 • The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4