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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1774 SWITCHING DUAL P-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) DESCRIPTION The µ PA1774 is Dual P-channel MOS Field Effect Transistor. 8 5 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 FEATURES • Dual chip type • Low on-state resistance RDS(on)1 = 250 mΩ MAX. (VGS = –10 V, ID = –2.0 A) RDS(on)2 = 300 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A) RDS(on)3 = 330 mΩ MAX. (VGS = –4.0 V, ID = –2.0 A) • Low input capacitance Ciss = 420 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 ORDERING INFORMATION PART NUMBER PACKAGE µ PA1774G Power SOP8 6.0 ±0.3 4 4.4 5.37 MAX. 0.8 0.15 +0.10 –0.05 1.44 0.05 MIN. 1.8 MAX. 1 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS –60 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V Drain Current (DC) (TC = 25°C) ID(DC) m2.8 A Note1 ID(pulse) m18 A Total Power Dissipation (1 unit) Note2 PT 0.6 W Total Power Dissipation (2 unit) Note2 PT 0.8 W Tch 150 °C °C Drain Current (pulse) Channel Temperature Storage Temperature Tstg –55 to 150 Single Avalanche Current Note3 IAS –2.8 A Single Avalanche Energy Note3 EAS 0.78 mJ EQUIVALENT CIRCUIT (1/2 circuit) Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2 2. Mounted on Glass Epoxy Board of 1600 mm x 1.6 mm. Drain pad size: 264 mm x 35 µm, TA = 25°C 3. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20→0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15380EJ2V0DS00 (2nd edition) Date Published June 2002 NS CP(K) Printed in Japan © 2001 µPA1774 ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −60 V, VGS = 0 V −10 µA Gate Leakage Current IGSS VGS = m16 V, VDS = 0 V m10 µA VGS(off) VDS = −10 V, ID = 1 mA −1.5 −2.0 −2.5 V | yfs | VDS = −10 V, ID = −2.0 A 2.5 4.3 RDS(on)1 VGS = −10 V, ID = −2.0 A 200 250 mΩ RDS(on)2 VGS = −4.5 V, ID = −2.0 A 230 300 mΩ RDS(on)3 VGS = −4.0 V, ID = −2.0 A 240 330 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = −10 V 420 pF Output Capacitance Coss VGS = 0 V 80 pF Reverse Transfer Capacitance Crss f = 1 MHz 30 pF Turn-on Delay Time td(on) VDD = −30 V, ID = −2.0 A 8 ns VGS = −10 V 5 ns RG = 0 Ω 35 ns 8 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = −48 V 10 nC Gate to Source Charge QGS VGS = −10 V 1.7 nC Gate to Drain Charge QGD ID = −2.8 A 2.2 nC VF(S-D) IF = 2.8 A, VGS = 0 V 0.89 V Reverse Recovery Time trr IF = 2.8 A, VGS = 0 V 45 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 65 µC Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL PG 50 Ω VDD VGS = –20 → 0 V RG PG. VGS (−) VGS Wave Form 0 VGS 10% 90% VDD VDS (−) − IAS 90% BVDSS VDS ID VDS Wave Form τ VDD Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. PG. 2 IG = −2 mA RL 50 Ω VDD 90% VDS VGS (−) 0 Data Sheet G15380EJ2V0DS 10% 10% 0 td(on) tr ton td(off) tf toff µPA1774 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 1 .0 100 80 60 40 20 0 0 .8 2 u n it 0 .6 1 u n it 0 .4 0 .2 0 .0 0 20 40 60 80 100 120 140 160 0 20 TA - Ambient Temperature - °C 60 80 100 120 140 160 FORWARD BIAS SAFE OPERATING AREA −100 −10 40 TA - Ambient Temperature - °C T A = 2 5 °C S ig le P u ls e I D (p u ls e ) = − 1 8 A I D (D C ) = − 2 .8 A −1 −0.1 −0.01 R D S (on ) L im ite d (V G S = − 1 0 V ) P W = 10 m s 100 m s P o w e r D iss ip a tio n L im ite d −0.001 −0.1 −1 −10 −100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 0 0 0 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A PW = 1 ms Rth(ch-A) = 208.3°C/W 1 0 0 1 0 1 0 .1 0 .0 1 Mounted on Glass Epoxy Board of 1600 mm2×1.6 mm Drain Pad size:264 mm2×35 µm 0 .0 0 1 0 .0 0 0 1 Single Pulse,1unit 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G15380EJ2V0DS 3 µPA1774 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE −20 FORWARD TRANSFER CHARACTERISTICS −100 −18 −10 −16 −14 V GS = −10 V −4.5 V −4 V −12 ID - Drain Current - A ID - Drain Current - A V DS = − 1 0 V P u ls e d Pulsed −10 −8 −6 −4 −1 −0.1 T A = 150°C 1 2 5 °C 7 5 °C 2 5 °C -2 5 °C −0.01 −0.001 −2 0 −1 0 −2 −3 −4 −0.0001 −5 VDS - Drain to Source Voltage - V −2.0 −1.5 −1.0 −0.5 0 25 50 75 100 125 150 175 | yfs | - Forward Transfer Admittance - S VGS(off) – Gate Cut-off Voltage - V −2.5 0 1 0 .0 0 700 600 500 V G S = − 4 .0 V − 4 .5 V −10 V 300 200 100 0 −100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ P u ls e d −10 0 .1 0 0 .0 1 −0.01 −0.1 −1 −10 −100 400 P u ls e d I D = −2 .8 A 300 200 100 ID - Drain Current - A 4 P u ls e d V DS = − 1 0 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 800 −1 T A = −2 5 °C 2 5 °C 7 5 °C 1 2 5°C 1 5 0°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT −0.1 −5 1 .0 0 Tch - Channel Temperature - °C 400 −4 1 0 0 .0 0 −3.0 -5 0 -2 5 −3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT V SD = − 1 0 V ID = − 1 m A −3.5 −2 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE −4.0 −1 0 0 −5 −10 −15 VGS - Gate to Source Voltage - V Data Sheet G15380EJ2V0DS −20 µPA1774 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 500 1000 P ulsed C iss V G S = −4V − 4.5 V −10 V 400 Ciss, Coss, Crss - Capacitance - pF 300 200 C oss 100 C r ss 10 VGS = 0 V f= 1 M H z 100 -50 -25 0 25 50 1 75 100 125 150 175 −0.1 Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns V DD = − 30 V V GS = −10 V R G = 10 Ω 100 t d (o f f) tf t d (o n ) 10 −100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS −60 tr ID = −2.8 A −12 −10 −50 VDD = −48 V −30 V −12 V −40 −8 VGS −30 −6 −20 −4 −2 −10 VDS 0 0 1 −0.1 −1 −10 0 −100 2 4 6 8 10 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 P u ls e d VGS = 0 V d i/ d t = 1 0 0 A / n s VGS = 0 V −10 trr - Reverse Recovery Time - ns ISD - Diode Forward Current - A −10 VDS - Drain to Source Voltage - V 1000 −100 −1 VGS - Gate to Drain Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE −1 −0.1 100 10 −0.01 0 −0.5 −1.0 −1.5 VSD - Source to Drain Voltage - V 1 −0.1 −1 −10 −100 IF - Drain Current - A Data Sheet G15380EJ2V0DS 5 µPA1774 SINGLE AVALANCHE ENERGY DERATING FACTOR 100 V DD = −30 V, RG = 25 Ω V GS = −20 → 0 V Starting Tch = 25°C IAS = −2.8 A Energy Derating Factor - % IAS - Single Avalanche Current - A −10 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD E AS = 0.78 mJ −1 80 60 40 20 −0.1 0.01 0.1 1 10 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - mH 6 V DD = − 30 V VGS =−20 → 0 V RG = 25 Ω I A S ≤ − 2 .8 A Data Sheet G15380EJ2V0DS µPA1774 [MEMO] Data Sheet G15380EJ2V0DS 7 µPA1774 • The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4