To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and “Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. “Standard”: 8. 9. 10. 11. 12. Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3434 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3434 TO-220AB 2SK3434-S TO-262 2SK3434-ZJ TO-263 2SK3434-Z TO-220SMDNote designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 24 A) Note TO-220SMD package is produced only RDS(on)2 = 31 mΩ MAX. (VGS = 4.0 V, ID = 24 A) in Japan. • Low Ciss: Ciss = 2100 pF TYP. • Built-in gate protection diode (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±48 A ID(pulse) ±120 A PT 56 W Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) PT 1.5 W Channel Temperature Tch 150 °C Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 28 A Single Avalanche Energy Note2 EAS 78 mJ Storage Temperature (TO-262) Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14603EJ3V0DS00 (3rd edition) Date Published July 2002 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1999, 2001 2SK3434 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL Zero Gate Drain Current MIN. TYP. MAX. UNIT 10 µA 2.5 V IDSS VDS = 60 V, VGS = 0 V VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 | yfs | VDS = 10 V, ID = 24 A 13 27 RDS(on)1 VGS = 10 V, ID = 24 A 16 20 mΩ RDS(on)2 VGS = 4.0 V, ID = 24 A 22 31 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance TEST CONDITIONS S Input Capacitance Ciss VDS = 10 V 2100 pF Output Capacitance Coss VGS = 0 V 340 pF Reverse Transfer Capacitance Crss f = 1 MHz 170 pF Turn-on Delay Time td(on) VDD = 30 V, ID = 24 A 40 ns tr VGS = 10 V 400 ns td(off) RG = 10 Ω 120 ns 160 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 48 V 40 nC Gate to Source Charge QGS VGS = 10 V 7 nC Gate to Drain Charge QGD ID = 48 A 11 nC VF(S-D) IF = 48 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 48 A, VGS = 0 V 43 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 61 nC Body Diode Forward Voltage TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS 10% Data Sheet D14603EJ3V0DS tr td(off) td(on) ton tf toff 2SK3434 TYPICAL CHARACTERISTICS (TA = 25°C ) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 70 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 0 20 40 60 80 100 60 50 40 30 20 10 0 0 120 140 160 20 Tch - Channel Temperature - ˚C 40 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse) ID - Drain Current - A 100 10 PW 10 0µ s d 1m ite im 0 V) s )L 10 ID(DC) 1 (on m = DS s R VG S DC Po (at Lim wer ite Dis d sip ati on =1 0µ s 1 0.1 0.1 TC = 25˚C Single Pulse 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1000 100 Rth(ch-A) = 83.3˚C/W 10 Rth(ch-C) = 2.23˚C/W 1 0.1 Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D14603EJ3V0DS 3 2SK3434 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed ID - Drain Current - A ID - Drain Current - A 50 100 TA = −40˚C 25˚C 75˚C 150˚C 10 1 40 30 VGS =10 V 20 VGS = 4.0 V 10 0.1 1.0 2.0 3.0 VDS = 10 V 5.0 6.0 4.0 0 Pulsed 0 10 TA = −40˚C 25˚C 75˚C 150˚C 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A 4 RDS(on) - Drain to Source On-state Resistance - mΩ 100 VDS = 10 V Pulsed 0.1 50 Pulsed 30 VGS = 4.0 V 20 VGS = 10 V 10 0 1 10 100 0.8 1000 Pulsed 40 30 20 ID = 24 A 10 0 5 0 10 15 20 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 0.6 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS(off) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 0.01 0.01 0.4 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V 1 0.2 GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 3.0 VDS = 10 V ID = 1 mA 2.5 2.0 1.5 1.0 0.5 0 −50 0 50 100 150 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet D14603EJ3V0DS 2SK3434 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed Pulsed 50 40 VGS = 4.0 V 30 20 VGS = 10 V 10 0 −50 100 10 VGS = 0 V 1.0 0.1 50 0 100 VGS = 10 V 150 0 Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHz 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 Ciss 1000 Coss 100 Crss 10 0.1 1 10 tr td(off) 100 tf VDD = 30 V VGS = 10 V RG = 10 Ω 1 0.1 100 10 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 100 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 100 A/µs VGS = 0 V 1 10 1 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 td(on) 10 VDS - Drain to Source Voltage - V 1000 1.5 1.0 0.5 VSD - Source to Drain Voltage - V 80 16 70 14 12 60 VGS VDD = 48 V 30 V 12 V 50 40 10 8 6 30 4 20 VDS 2 10 0 0 5 10 15 20 25 30 35 VGS - Gate to Source Voltage - V 60 ISD - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 40 QG - Gate Charge - nC ID - Drain Current - A Data Sheet D14603EJ3V0DS 5 2SK3434 SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 160 IAS = 28 A EAS 10 =7 J VDD = 30 V RG = 25 Ω VGS = 20 → 0 V 100 µ 120 100 80 60 40 20 1m L - Inductive Load - H 6 8m 1 0.1 10 µ VDD = 30 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 28 A 140 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 10 m 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C Data Sheet D14603EJ3V0DS 2SK3434 ★ PACKAGE DRAWINGS (Unit: mm) TO-220AB (MP-25) 2) TO-262 (MP-25 Fin Cut) φ 3.6±0.2 1.0±0.5 4.8 MAX. 10.6 MAX. 3.0±0.3 10 TYP. 1.3±0.2 4 0.5±0.2 0.75±0.1 2.54 TYP. 3 1.3±0.2 12.7 MIN. 6.0 MAX. 1 2 3 1.3±0.2 2 2.8±0.2 1.3±0.2 8.5±0.2 4 1 4.8 MAX. 12.7 MIN. 5.9 MIN. 10.0 TYP. 15.5 MAX. 1) 0.5±0.2 0.75±0.3 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3) Note TO-263 (MP-25ZJ) 4) TO-220SMD (MP-25Z) 4.8 MAX. 10 TYP. 4.8 MAX. 1.3±0.2 1.3±0.2 0.7±0.2 R 0.5 T R 0.8 P. TY 0.5±0.2 0.75±0.3 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 8.5±0.2 1.0±0.5 1.4±0.2 . YP 2.54 TYP. 2.8±0.2 2.54 TYP. 1 3 1.1±0.4 1.4±0.2 4 0 .5R P. P. TY TY R .8 2.54 TYP. 0 2.8±0.2 3 5.7±0.4 2 8.5±0.2 1.0±0.5 4 3.0±0.5 10 TYP. 1 2.8±0.2 2.54 TYP. 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note This package is produced only in Japan. EQUIVALENT CIRCUIT Remark Drain The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage Body Diode Gate Gate Protection Diode exceeding the rated voltage may be applied to this device. Data Sheet D14603EJ3V0DS Source 7 2SK3434 • The information in this document is current as of July, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4