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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μPA2350
DUAL Nch MOSFET
FOR SWITCHING
DESCRIPTION
OUTLINE DRAWING (Unit: mm)
The μPA2350 is a Dual N-channel MOSFET designed for Li-ion
battery protection circuit.
Ecologically Flip chip MOSFET for Lithium-Ion battery Protection
(EFLIP).
•
•
•
G2
1.62 ± 0.02
FEATURES
•
BOTTOM VIEW
0.65
TOP VIEW
1.62 ± 0.02
Monolithic Dual MOSFET
The Drain connection on circuit board is unnecessary, because
Drains of 2MOSFET are internally connected.
2.5 V drive available and low on-state resistance
RSS(on)1 = 35 mΩ MAX. (VGS = 4.5 V, IS = 3.0 A)
RSS(on)2 = 37 mΩ MAX. (VGS = 4.0 V, IS = 3.0 A)
RSS(on)3 = 44 mΩ MAX. (VGS = 3.1 V, IS = 3.0 A)
RSS(on)4 = 55 mΩ MAX. (VGS = 2.5 V, IS = 3.0 A)
Built-in G-S protection diode against ESD
Pb-free Bump
S2
0.65
G1
1-pin index mark S1
S1
Dot area (For in-house)
// 0.1 S
0.2 ± 0.02
0.28 ± 0.03
S
4 - φ 0.37
S1 : Source1
G1 : Gate1
G2 : Gate2
S2 : Source2
0.08 S
ORDERING INFORMATION
PART NUMBER
PACKAGE
μPA2350T1G-E4-A
4pinEFLIP
EQUIVALENT CIRCUIT
Remark "-A" indicates Pb-free (This product does not contain Pb in
external electrode and other parts)."-E4" indicates the unit
orientation (E4 only).
FET1
FET2
Gate1
Gate2
Gate
Protection
Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Source to Source Voltage (VGS = 0 V)
VSSS
20
VGSS
±12
Gate to Source Voltage (VSS = 0 V)
Note1
Source Current (DC)
6.0
IS(DC)
Source Current (pulse) Note2
±60
IS(pulse)
Total Power Dissipation Note1
1.3
PT
150
Channel Temperature
Tch
−55 to +150
Storage Temperature
Tstg
Notes 1. Mounted on ceramic board of 50 cm2 × 1.0mm
2. PW ≤ 100 μs, Single pulse
V
V
A
A
W
°C
°C
Source2
Source1
Body Diode
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No.
G17995EJ1V0DS00 (1st edition)
Date Published March 2006 NS CP(K)
Printed in Japan
2006
μPA2350
ELECTRICAL CHARACTERISTICS (TA = 25°C) These are common to FET1 and FET2.
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Source Current
ISSS
VSS = 20 V, VGS = 0 V, TEST CIRCUIT 1
1
μA
Gate Leakage Current
IGSS
VGS = ±12 V, VSS = 0 V, TEST CIRCUIT 2
±10
μA
VGS(off)
VSS = 10 V, IS = 1.0 mA, TEST CIRCUIT 3
0.5
1.0
1.5
V
| yfs |
VSS = 10 V, IS = 3.0 A, TEST CIRCUIT 4
2.5
8.0
RSS(on)1
VGS = 4.5 V, IS = 3.0 A, TEST CIRCUIT 5
22
28
35
mΩ
RSS(on)2
VGS = 4.0 V, IS = 3.0 A, TEST CIRCUIT 5
23
29
37
mΩ
RSS(on)3
VGS = 3.1 V, IS = 3.0 A, TEST CIRCUIT 5
24
33
44
mΩ
RSS(on)4
VGS = 2.5 V, IS = 3.0 A, TEST CIRCUIT 5
30
41
55
mΩ
Gate Cut-off Voltage
Note
Forward Transfer Admittance
Source to Source On-state
Resistance
Note.
S
Input Capacitance
Ciss
VSS = 10 V, VGS = 0 V, f = 1.0 MHz
542
pF
Output Capacitance
Coss
TEST CIRCUIT 7
132
pF
Reverse Transfer Capacitance
Crss
91
pF
Turn-on Delay Time
td(on)
VDD = 10 V, IS = 6.0 A,
24
ns
VGS = 4.0 V, RG = 6.0 Ω,
165
ns
TEST CIRCUIT 8
160
ns
150
ns
8.6
nC
0.9
V
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD = 16 V, VG1S1 = 4.0 V, IS = 6.0 A,
TEST CIRCUIT 9
Body Diode Forward Voltage
Note
VF(S-S)
IF = 6.0 A, VGS = 0 V, TEST CIRCUIT 6
Note Pulsed
Test circuits are example of measuring the FET1 side.
TEST CIRCUIT 1 ISSS
TEST CIRCUIT 2 IGSS
S2
S2
When FET1 is
G2
measured, between
A
G2
GATE and SOURCE
of FET2 are shorted.
G1
VSS
A
VGS
S1
G1
S1
TEST CIRCUIT 3 VGS(off)
TEST CIRCUIT 4 | yfs |
S2
When FET1 is
S2
ΔIS/ΔVGS
G2
G2
measured, between
A
A
GATE and SOURCE
A
A
of FET2 are shorted.
G1
G1
VSS
VGS
S1
2
VSS
VGS
S1
Data Sheet G17995EJ1V0DS
μPA2350
TEST CIRCUIT 5 RSS(on)
TEST CIRCUIT 6 VF(S-S)
When FET1 is measured,
FET2 is added VGS +4.5 V.
S2
VSS/IS
G2
4.5 V
IF
G2
IS
VSS
VSS
G1
G1
V
V
VGS
=0V
VGS
S1
S1
TEST CIRCUIT 7
Ciss
Coss
Crss
S2
G2
S2
S2
VSS
Capacitance
Bridge
G1
G2
G2
VSS
VSS
G1
G1
Capacitance
Bridge
Capacitance
Bridge
S1
S1
S1
TEST CIRCUIT 8 td(on), tr, td(off), tf
S2
VGS
G2
VGS
V
Wave Form
RL
0
VGS
10%
90%
VSS
G1
PG.
VGS
0
VSS
RG
Wave Form
VDD
τ
S1
VSS
90%
90%
10% 10%
0
td(on)
tr td(off)
ton
tf
toff
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 9 QG
S2
G2
A
IG = 2 mA
RL
G1
PG.
50 Ω
VDD
S1
Data Sheet G17995EJ1V0DS
3
μPA2350
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.6
120
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
Mounted on ceramic board
of 50 cm2 x 1.0 mm
1.2
0.8
0.4
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
FORWARD BIAS SAFE OPERATING AREA
IS - Source Current - A
RSS(on) Limited
(V GS = 4.5 V)
PW =10 μ s
100 μ s
IS(pul se)
10
400 μ s
1ms
IS(DC)
1
10 ms
0.1
100 ms
Single Pulse
P(FET1):P(FET2) = 1:1
M ounted on ceramic board of
50 cm2 × 1.0 mm
DC
0.01
0.1
1
10
100
VSS - Source to Source Voltage - V
rth(ch-A) - Transient Thermal Resistance - °C/W °C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
4
1000
Single Pulse
P(FET1):P(FET2) = 1:1
Mounted on BT resin board of
40.5 x 25 x 1.5 mm
100
Mounted on ceramic board of
50 cm2 × 1.0 mm
10
1
0.1
100 μ
1m
150
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
100
125
10 m
100 m
1
PW - Pulse Width - s
Data Sheet G17995EJ1V0DS
10
100
1000
175
μPA2350
SOURCE CURRENT vs.
SOURCE TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
60
10
V GS = 4.5 V
TEST CIRCUIT 3
V SS = 10 V
Pulsed
4.0 V
IS - Source Current - A
IS - Source Current - A
50
3.1 V
40
30
20
2.5 V
TEST CIRCUIT 5
Pulsed
10
0
0
2
4
1
TA = 125 °C
75 °C
25 °C
−25 °C
0.1
0.01
0.001
6
0
0.5
VSS - Source to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate Cut-off Voltage - V
TEST CIRCUIT 3
VSS = 10 V
ID = 1.0 mA
0.8
0.6
0.4
0
50
100
TEST CIRCUIT 4
VSS = 10 V
Pulsed
TA = −25 °C
25 °C
75 °C
125 °C
1
0.1
0.01
150
0.1
TEST CIRCUIT 5
Pulsed
80
VGS = 2.5 V
3.1 V
4.0 V
4.5 V
40
20
0
10
IS - Source Current - A
10
100
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RSS(on) - Source to Source On-state Resistance - mΩ
RSS(on) - Source to Source On-state Resistance - mΩ
100
1
1
IS - Source Current - A
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
SOURCE CURRENT
0.1
2.5
10
Tch - Channel Temperature - °C
60
2
FORWARD TRANSFER ADMITTANCE vs.
SOURCE CURRENT
1.2
-50
1.5
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1
1
100
TEST CIRCUIT 5
IS = 3.0 A
Pulsed
80
60
40
20
0
Data Sheet G17995EJ1V0DS
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
5
μPA2350
CAPACITANCE vs. SOURCE TO SOURCE
VOLTAGE
1000
100
80
TEST CIRCUIT 5
IS = 3.0 A
Pulsed
VGS = 2.5 V
3.1 V
4.0 V
4.5 V
60
Ciss, Coss, Crss - Capacitance - pF
RSS(on) - Source to Source On-state Resistance - mΩ
SOURCE TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
20
C iss
C oss
100
C rss
TEST CIRCUIT 7
V GS = 0 V
f = 1.0 MHz
10
0
-50
0
50
100
0.1
150
4
TEST CIRCUIT 8
V DD = 10 V, V GS = 4.0 V
RG = 6.0 Ω
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
100
DYNAMIC INPUT CHARACTERISTICS
1000
tr
tf
100
td(of f )
td( on)
10
VSS = 4 V
10 V
16 V
3
2
1
TEST CIRCUIT 9
IS = 6.0 A
0
0.1
1
10
100
0
IS - Source Current - A
100
10
VGS = 2.5 V
0V
1
0.1
0.01
TEST CIRCUIT 6
Pulsed
0.001
0
0.5
1
1.5
2
2
4
6
QG - Gate Charge - nC
SOURCE TO SOURCE DIODE FORWARD VOLTAGE
IF - Diode Forward Current - A
10
VSS - Source to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
2.5
3
VF(S-S) - Source to Source Voltage - V
6
1
Data Sheet G17995EJ1V0DS
8
10
μPA2350
< Example of application circuit >
LI-ion battery (1cell) protection circuit
Li-ion battery pack
Protection circuit
P+
Li-ion
battery
cell
Battery protection IC
P−
μPA2350, μPA2351
<Notes for using this device safely>
When you use this device, in order to prevent a customer’s hazard and damage, use it with understanding the
following contents. If used exceeding recommended conditions, there is a possibility of causing the device and
characteristic degradation.
1. This device is very thin device and should be handled with caution for mechanical stress. The distortion
applied to the device should become below 2000 × 10−6. If the distortion exceeds 2000 × 10−6, the
characteristic of a device may be degraded and it may result in failure.
2. Please do not damage the device when you handle it. The use of metallic tweezers has the possibility of
giving the wound. Mounting with the nozzle with clean point is recommended.
3. When you mount the device on a substrate, carry out within our recommended soldering conditions of infrared
reflow. If mounted exceeding the conditions, the characteristic of a device may be degraded and it may result
failure.
4. When you wash the device mounted the board, carry out within our recommended conditions. If washed
exceeding the conditions, the characteristic of a device may be degraded and it may result in failure.
5. When you use ultrasonic wave to substrate after the device mounting, prevent from touching a resonance
directly. If it touches, the characteristic of a device may be degraded and it may result in failure.
6. When you coat the device after mounted on the board, please consult our company. NEC Electronics
recommends the epoxy resin of the semiconductor grade as a coating material.
7. Please refer to Figure 2 as an example of the Mounting Pad. Optimize the land pattern in consideration of
density, appearance of solder fillets, common difference, etc in an actual design.
8. The marking side of this device is an internal electrode. Please neither contact with terminals of other parts
nor take out the electrode.
Data Sheet G17995EJ1V0DS
7
μPA2350
Figure 1
Recommended soldering conditions of INFRARED REFLOW
Maximum temperature (Package's surface temperature)
Time at maximum temperature
Time of temperature higher than 220˚C
Preheating time at 160 to 180˚C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (Mass percentage)
: 260˚C or below
: 10 s or less
: 60 s or less
: 60 to 120 s
: 3 times
: 0.2% or less
(Main heating)
to 10 s
Package's surface
temperature (˚C)
260˚C MAX.
220˚C
180˚C
to 60 s
160˚C
60 to 120 s
(Preheating)
Time(s)
Infrared Reflow Temperature Profile
Figure 2
The example of the Mounting Pad (Unit : mm)
4 - φ 0.30
0.65
0.65
Figure 3
REEL SIDE
The unit orientation
LEADER SIDE
TOP VIEW
8
Data Sheet G17995EJ1V0DS
S2
S2
G2
G2
S1
S1
G1
G1
μPA2350
• The information in this document is current as of March, 2006. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1