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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3435 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3435 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3435 TO-220AB designed for high current switching applications. 2SK3435-S TO-262 FEATURES 2SK3435-ZJ TO-263 • Super low on-state resistance 2SK3435-Z TO-220SMD Note RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) Note TO-220SMD package is produced only RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A) in Japan. • Low Ciss: Ciss = 3200 pF TYP. (TO-220AB) • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±80 A ID(pulse) ±160 A PT 84 W Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) PT 1.5 W Channel Temperature Tch 150 °C Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 31 A Single Avalanche Energy Note2 EAS 96 mJ Storage Temperature (TO-262) Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V (TO-220SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14604EJ3V0DS00 (3rd edition) Date Published July 2002 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1999, 2001 2SK3435 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V | yfs | VDS = 10 V, ID = 40 A 21 43 RDS(on)1 VGS = 10 V, ID = 40 A 11 14 mΩ RDS(on)2 VGS = 4.0 V, ID = 40 A 16 22 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 3200 pF Output Capacitance Coss VGS = 0 V 520 pF Reverse Transfer Capacitance Crss f = 1 MHz 260 pF Turn-on Delay Time td(on) VDD = 30 V, ID = 40 A 80 ns Rise Time Turn-off Delay Time Fall Time tr VGS = 10 V 1200 ns td(off) RG = 10 Ω 200 ns 350 ns tf Total Gate Charge QG VDD = 48 V 60 nC Gate to Source Charge QGS VGS = 10 V 10 nC Gate to Drain Charge QGD ID = 80 A 16 nC VF(S-D) IF = 80 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 80 A, VGS = 0 V 46 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 66 nC Body Diode Forward Voltage TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS 10% Data Sheet D14604EJ3V0DS tr td(off) td(on) ton tf toff 2SK3435 TYPICAL CHARACTERISTICS (TA = 25°C ) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 140 100 80 60 40 20 0 0 20 40 60 80 100 120 140 120 100 80 60 40 20 0 0 160 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C Tch - Channel Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 1000 ID(pulse) d ite V) m i 0 ID(DC) )L 1m on =1 S( s S RD t VG 10 Po ms D (a Lim wer D C ite d issipa tio n 100 10 PW 10 0µ s =1 0µ s 1 0.1 0.1 TC = 25˚C Single Pulse 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1000 100 Rth(ch-A) = 83.3˚C/W 10 Rth(ch-C) = 1.49˚C/W 1 0.1 0.01 10 µ Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D14604EJ3V0DS 3 2SK3435 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 100 TA = –40˚C 25˚C 75˚C 150˚C 10 1 1 2 3 VDS = 10 V 5 6 4 RDS(on) - Drain to Source On-state Resistance - mΩ VGS =10 V 40 4.0 V 20 Pulsed 0 0.4 0.2 0.8 0.6 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 TA = 150˚C 75˚C 25˚C –40˚C 1 0.1 0.01 0.01 1 0.1 10 100 ID - Drain Current - A 4 60 VGS - Gate to Source Voltage - V 100 VDS = 10 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 Pulsed 30 20 VGS = 4.0 V 10 V 10 0 80 0 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ 0.1 | yfs | - Forward Transfer Admittance - S 100 VGS(off) - Gate to Source Threshold Voltage - V ID - Drain Current - A 1000 Pulsed 50 Pulsed 40 30 20 ID = 40 A 10 0 5 0 10 15 20 VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 3.0 VDS = 10 V ID = 1 mA 2.5 2.0 1.5 1.0 0.5 0 ID - Drain Current - A −50 0 50 100 150 Tch - Channel Temperature - ˚C Data Sheet D14604EJ3V0DS SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1000 Pulsed 30 VGS = 4.0 V 10 V 20 10 0 ID = 40 A −50 0 50 100 Pulsed 100 VGS = 10 V 10 VGS = 0 V 1 0.1 0 150 Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 10000 VGS = 0 V f = 1 MHz td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 Ciss 1000 Coss 100 10 0.1 Crss 1 10 VDD = 30 V RG = 10 Ω VGS = 10 V td(off) 100 tf td(on) 10 0.1 100 10 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 100 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 100 A/µs VGS = 0 V 1 10 1 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 tr 1000 VDS - Drain to Source Voltage - V 1000 1.5 1.0 0.5 VSD - Source to Drain Voltage - V 80 16 70 14 12 60 VGS VDD = 48 V 30 V 12 V 50 40 10 8 30 6 20 4 10 0 0 2 VDS 10 20 30 40 50 60 70 VGS - Gate to Source Voltage - V 40 ISD - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3435 80 QG - Gate Charge - nC IF - Drain Current - A Data Sheet D14604EJ3V0DS 5 2SK3435 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 160 140 EAS 10 =9 6m J 1 VDD = 30 V RG = 25 Ω VGS = 20 → 0 V 0.1 10 µ 100 µ 120 100 80 60 40 20 1m 10 m 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C L - Inductive Load - H 6 VDD = 30 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 31 A IAS = 31 A Energy Derating Factor - % IAS - Single Avalanche Current - A 100 Data Sheet D14604EJ3V0DS 2SK3435 ★ PACKAGE DRAWINGS (Unit: mm) TO-220AB (MP-25) 2) TO-262 (MP-25 Fin Cut) φ 3.6±0.2 1.0±0.5 4.8 MAX. 10.6 MAX. 3.0±0.3 10 TYP. 1.3±0.2 4 0.5±0.2 0.75±0.1 2.54 TYP. 3 1.3±0.2 12.7 MIN. 6.0 MAX. 1 2 3 1.3±0.2 2 2.8±0.2 1.3±0.2 8.5±0.2 4 1 4.8 MAX. 12.7 MIN. 5.9 MIN. 10.0 TYP. 15.5 MAX. 1) 0.5±0.2 0.75±0.3 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note TO-263 (MP-25ZJ) 4) TO-220SMD (MP-25Z) 4.8 MAX. 10 TYP. 4.8 MAX. 10 TYP. 1.3±0.2 1.3±0.2 4 0.7±0.2 R 0.5 2.54 TYP. 2.8±0.2 2.54 TYP. 1.4±0.2 . YP T R 0.8 P. TY 0.5±0.2 0.75±0.3 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 8.5±0.2 2 3 3.0±0.5 1.4±0.2 1 0 .5R P. P. TY TY R .8 2.54 TYP. 0 2.8±0.2 3 1.1±0.4 8.5±0.2 2 5.7±0.4 1 1.0±0.5 4 1.0±0.5 3) 2.8±0.2 2.54 TYP. 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note This package is produced only in Japan. EQUIVALENT CIRCUIT Remark Drain The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage Body Diode Gate Gate Protection Diode Source exceeding the rated voltage may be applied to this device. Data Sheet D14604EJ3V0DS 7 2SK3435 • The information in this document is current as of July, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4