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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3115 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION FEATURES • Low gate charge QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage rating ±30 V PART NUMBER PACKAGE 2SK3115 Isolated TO-220 • Low on-state resistance ★ RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A) (Isolated TO-220) • Avalanche capability ratings ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±6.0 A ID(pulse) ±24 A Total Power Dissipation (TA = 25°C) PT1 2.0 W Total Power Dissipation (TC = 25°C) PT2 35 W Channel Temperature Tch 150 °C Tstg −55 to +150 °C IAS 6.0 A EAS 24 mJ Drain Current (pulse) Note1 Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13338EJ2V0DS00 (2nd edition) Date Published January 2001 NS CP (K) Printed in Japan The mark ★ shows major revised points. © 1998, 2001 2SK3115 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V 100 µA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V | yfs | VDS = 10 V, ID = 3.0 A 2.0 RDS(on) VGS = 10 V, ID = 3.0 A Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S 0.9 Ω 1.2 Input Capacitance Ciss VDS = 10 V 1100 pF Output Capacitance Coss VGS = 0 V 200 pF Reverse Transfer Capacitance Crss f = 1 MHz 20 pF Turn-on Delay Time td(on) VDD = 150 V, ID = 3.0 A 18 ns VGS(on) = 10 V 12 ns RG = 10 Ω, RL = 50 Ω 50 ns 15 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 450 V 26 nC Gate to Source Charge QGS VGS = 10 V 6 nC Gate to Drain Charge QGD ID = 6.0 A 10 nC VF(S-D) IF = 6.0 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 6.0 A, VGS = 0 V 1.4 µs Reverse Recovery Charge Qrr di/dt = 50 A/µs 6.5 µC Body Diode Forward Voltage ★ TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS(on) 10% 90% VDD VDS 90% BVDSS IAS VDS VDS ID Starting Tch τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10% 0 10% Wave Form VDD D.U.T. IG = 2 mA 90% VDS VGS 0 RL VDD Data Sheet D13338EJ2V0DS td(on) tr ton td(off) tf toff 2SK3115 ★ TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 80 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 20 40 60 80 100 120 140 60 40 20 160 0 Tch - Channel Temperature - ˚C 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 10 ) (on DS R 0.1 1 PW ID(DC) Po we r 1 Di ss ipa tio n 10 m 10 0m s Lim s ite d =1 0µ s 10 0µ s 1m s TC = 25˚C Single Pulse 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH r th (t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A ID(pulse) d ite Lim 100 Rth(ch-A) = 62.5˚C/W 10 Rth(ch-C) = 3.57˚C/W 1 0.1 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D13338EJ2V0DS 3 2SK3115 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS Pulsed 100 ID - Drain Current - A ID - Drain Current - A 25 VGS = 10 V 20 8V 15 6V 10 Tch = 125˚C 75˚C 10 Tch = 25˚C −25˚C 1.0 0.1 5 0 10 20 30 40 0 5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS (on) - Drain to Source On-state Resistance - Ω | yfs | - Forward Transfer Admittance - S 4.0 3.0 2.0 1.0 VDS = 10 V ID = 1mA 0 50 100 150 10 Tch = −25˚C 25˚C 75˚C 125˚C 1.0 VDS = 10 V Pulsed 0.1 0.1 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 2.0 ID = 6.0 A 3.0 A 1.0 0 0 4 8 12 16 20 2.0 Pulsed 1.6 1.2 VGS = 10 V 20 V 0.8 0.4 0 1.0 VGS - Gate to Source Voltage - V 4 1.0 Tch - Channel Temperature - ˚C RDS(on) - Drain to Source On-state Resistance - Ω VGS(off) - Gate Cut-off Voltage - V 5.0 0 −50 10 VDS = 10 V Pulsed 15 10 ID - Drain Current - A Data Sheet D13338EJ2V0DS 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 3.0 ID = 6.0 A 3.0 A 2.0 1.0 VGS = 10 V Pulsed 0 −50 0 100 50 ISD - Diode Forward Current - A RDS (on) - Drain to Source On-state Resistance - Ω 2SK3115 100 10 1.0 0.1 150 VGS = 10 V 0 Tch - Channel Temperature - ˚C 0V 0.5 Pulsed 1.5 1.0 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 10000 Ciss 1000 Coss 100 10 VGS = 0 V f = 1 MHz 1 1.0 Crss 10 100 td(off) tf td(on) 10 tr 1 VDD = 150 V VGS = 10 V RG = 10 Ω 0.1 0.1 1000 1 trr - Reverse Recovery Time - ns di/dt = 50 A/µs VGS = 0 V 1000 100 10 0.1 1.0 10 100 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 10000 10 ID - Drain Current - A VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 ID = 6 A 14 VGS VDD = 450 V 600 12 300 V 120 V 10 400 8 6 200 4 VDS 2 0 10 20 30 VGS - Gate to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF 100 0 40 Qg - Gate Charge - nC ID - Drain Current - A Data Sheet D13338EJ2V0DS 5 2SK3115 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 10 IAS = 6 A EAS =2 4m J 1.0 RG = 25 Ω VDD = 150 V VGS = 20 → 0 V Starting Tch = 25˚C 0.1 10 µ 100 µ 1m 10 m Energy Derating Factor - % IAS - Single Avalanche Current - A 100 VDD = 150 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 6 A 100 80 60 40 20 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C L - Inductive Load - H PACKAGE DRAWING (Unit: mm) Isolated TO-220(MP-45F) 10.0 ± 0.3 φ 3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 EQUIVALENT CIRCUIT 12.0 ± 0.2 Body Diode Gate (G) 13.5MIN. 4 ± 0.2 3 ± 0.1 15.0 ± 0.3 Drain (D) Source (S) 1.3 ± 0.2 2.5 ± 0.1 0.65 ± 0.1 1.5 ± 0.2 2.54 0.7 ± 0.1 2.54 1.Gate 2.Drain 3.Source 1 2 3 Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D13338EJ2V0DS 2SK3115 [MEMO] Data Sheet D13338EJ2V0DS 7 2SK3115 • The information in this document is current as of January, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4