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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3116 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3116 is N-channel DMOS FET device that features a PART NUMBER PACKAGE 2SK3116 TO-220AB 2SK3116-S TO-262 2SK3116-ZJ TO-263 low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low gate charge QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V) •Gate voltage rating ±30 V •Low on-state resistance RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.75 A) •Avalanche capability ratings ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) ID(DC) ±7.5 A ID(pulse) ±30 A Total Power Dissipation (TA = 25°C) PT1 1.5 W Total Power Dissipation (TC = 25°C) PT2 70 W Channel Temperature Tch 150 °C Drain Current (pulse) Note1 Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 7.5 A Single Avalanche Energy Note2 EAS 37.5 mJ dv/dt 3.5 V/ns Storage Temperature Diode Recovery dv/dt Note3 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω , VGS = 20 → 0 V 3. IF ≤ 3.0 A, Vclamp = 600 V, di/dt ≤ 100 A/ µs, TA = 25°C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13339EJ2V0DS00 (2nd edition) Date Published May 2002 NS CP (K) Printed in Japan The mark ★ shows major revised points. © 1998 2SK3116 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHRACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V 100 µA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V | yfs | VDS = 10 V, ID = 3.75 A 2.0 RDS(on) VGS = 10 V, ID = 3.75 A Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S 0.9 Ω 1.2 Input Capacitance Ciss VDS = 10 V 1100 pF Output Capacitance Coss VGS = 0 V 200 pF Reverse Transfer Capacitance Crss f = 1 MHz 20 pF Turn-on Delay Time td(on) VDD = 150 V, ID = 3.75 A 18 ns tr VGS = 10 V 15 ns td(off) RG = 10 Ω 50 ns tf RL = 50 Ω 15 ns Rise Time Turn-off Delay Time Fall Time Total Gate Charge QG VDD = 450 V 26 nC Gate to Source Charge QGS VGS = 10 V 6 nC Gate to Drain Charge QGD ID = 7.5 A 10 nC VF(S-D) IF = 7.5 A, VGS = 0 V 1.0 V Reverse Recovery Time Trr IF = 7.5 A, VGS = 0 V 1.6 µs Reverse Recovery Charge Qrr di/dt = 50 A/ µs 7.6 µC Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL RG RG = 10 Ω PG. VDD VGS Wave Form 0 VGS 10% 90% VDD ID 90% 90% BVDSS IAS ID VGS 0 ID VDS ID τ VDD Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% Wave Form RL VDD Data Sheet D13339EJ2V0DS td(on) tr ton td(off) tf toff 2SK3116 TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS Pulsed 100 VGS = 10 V 20 ID - Drain Current - A ID - Drain Current - A 25 8V 15 6V 10 Tch = 125˚C 75˚C 10 Tch = 25˚C −25˚C 1.0 0.1 5 0 10 20 30 0 40 5 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V 5.0 4.0 3.0 2.0 1.0 VDS = 10 V ID = 1 mA 0 −50 0 50 100 150 10 Tch = −25˚C 25˚C 75˚C 125˚C 1.0 VDS = 10 V Pulsed 0.1 0.1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 3.0 Pulsed 2.0 ID = 4.0 A 7.5 A 1.0 5 10 VGS - Gate to Source Voltage - V 1.0 10 ID - Drain Current - A 15 RDS(on) - Drain to Source On-State Resistance - Ω RDS (on) - Drain to Source On-State Resistance - Ω Tch - Channel Temperature - ˚C 0 0 10 VDS = 10 V Pulsed 15 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 3.0 2.0 VGS = 10 V 20 V 1.0 0 Data Sheet D13339EJ2V0DS 1.0 10 ID - Drain Current - A 100 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4.0 3.0 2.0 ID = 7.5 A 4.0 A 1.0 0 −50 VGS = 10 V Pulsed 50 0 SOURCE TO DRAIN DIODE FORWARD VOLTAGE ISD - Diode Forward Current - A RDS (on) - Drain to Source On-State Resistance - Ω 2SK3116 100 10 1.0 0.1 0V Pulsed 150 100 VGS = 10 V 0 Tch - Channel Temperature - ˚C 0.5 1.0 1.5 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 10000 Ciss 1000 Coss 100 10 1 1.0 VGS = 0 V f = 1 MHz Crss 10 100 td(off) tf td(on) 10 tr 1 VDD = 150 V VGS = 10 V RG = 10 Ω 0.1 0.1 1000 1 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT di/dt = 50 A/ µs VGS = 0 V VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 10000 1000 100 10 0.1 1.0 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 ID = 7.5 A 14 600 VDD = 450 V 300 V 150 V 12 VGS 400 10 8 6 200 4 VDS 0 8 2 12 20 QG - Gate Charge - nC ID - Drain Current - A 4 10 ID - Drain Current - A Data Sheet D13339EJ2V0DS 0 32 VGS - Gate to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF 100 2SK3116 ★ ★ DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 80 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 70 60 50 40 30 20 10 0 20 TC - Case Temperature - ˚C 40 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) ID - Drain Current - A PW d ite 10 ) on S( Lim 10 0 ID(DC) 1 RD Po we r 1 0.1 1 = 10 µs µs m s 3 10 ms 3 m 10 0 m s 0 s DC ms Di ss ipa tio n Lim ite d TC = 25˚C Single Pulse 10 100 1000 VDS - Drain to Source Voltage - V ★ rth(t) - Transient Thermal Resistance - ˚C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(ch-A) = 83.3˚C/W 100 10 Rth(ch-C) = 1.79˚C/W 1 0.1 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D13339EJ2V0DS 5 2SK3116 SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 120 IAS = 7.5 A 10 EAS 7.5 mJ 1.0 RG = 25 Ω VDD = 150 V VGS = 20 → 0 V Starting Tch = 25˚C 0.1 10 µ 100 µ 1m L - Inductive Load - H 6 =3 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 10 m VDD = 150 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 7.5 A 100 80 60 40 20 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C Data Sheet D13339EJ2V0DS 2SK3116 ★ PACKAGE DRAWINGS (Unit: mm) φ 3.6±0.2 10 TYP. 1.3±0.2 4 1 1 2 3 6.0 MAX. 1.3±0.2 12.7 MIN. 1.3±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 2 3 4.8 MAX. 1.3±0.2 12.7 MIN. 5.9 MIN. 4 15.5 MAX. 10.0 TYP. 1.0±0.5 4.8 MAX. 10.6 MAX. 3.0±0.3 2) TO-262 (MP-25 Fin Cut) 8.5±0.2 1) TO-220AB (MP-25) 0.5±0.2 2.8±0.2 2.54 TYP. 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3) TO-263 (MP-25ZJ) 4.8 MAX. 10 TYP. 1.3±0.2 4 2 3 5.7±0.4 1 8.5±0.2 1.0±0.5 EQUIVALENT CIRCUIT 1.4±0.2 0.7±0.2 Remark P. R 0.5 2.54 TYP. 2.8±0.2 2.54 TYP. Drain (D) TY R 0.8 P. TY Body Diode Gate (G) 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) Source (S) Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Data Sheet D13339EJ2V0DS 7 2SK3116 • The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4