RENESAS 2SK4075B

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April 1st, 2010
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4075B
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4075B is N-channel MOS FET designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
2SK4075B-ZK-E1-AY
Pure Sn (Tin)
2SK4075B-ZK-E2-AY
PACKING
PACKAGE
Tape
TO-252 (MP-3ZK)
2500 p/reel
typ. 0.27 g
FEATURES
(TO-252)
• Low on-state resistance
RDS(on)1 = 7.9 mΩ MAX. (VGS = 10 V, ID = 25 A)
RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 13 A)
• Low Ciss: Ciss = 2230 pF TYP.
• Logic level drive type
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±50
A
ID(pulse)
±120
A
Total Power Dissipation (TC = 25°C)
PT1
36
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
°C
Drain Current (pulse)
Note1
Storage Temperature
Tstg
–55 to +150
Single Avalanche Current
Note2
IAS
20.8
A
Single Avalanche Energy
Note2
EAS
43
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
3.47
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
125
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D20258EJ1V0DS00 (1st edition)
Date Published March 2010 NS
Printed in Japan
2010
2SK4075B
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.5
V
| yfs |
VDS = 10 V, ID = 13 A
7.0
RDS(on)1
VGS = 10 V, ID = 25 A
5.9
7.9
mΩ
RDS(on)2
VGS = 4.5 V, ID = 13 A
7.5
10
mΩ
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
2.0
S
Input Capacitance
Ciss
VDS = 10 V
2230
pF
Output Capacitance
Coss
VGS = 0 V
319
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
171
pF
Turn-on Delay Time
td(on)
VDD = 20 V
15
ns
ID = 25 A
17
ns
VGS = 10 V
51
ns
RG = 0 Ω
5
ns
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD = 32 V
44
nC
Gate to Source Charge
QGS
VGS = 10 V
8
nC
QGD
ID = 50 A
12
nC
VF(S-D)
IF = 50 A, VGS = 0 V
0.9
Reverse Recovery Time
trr
IF = 50 A, VGS = 0 V
30
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
25
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
1.5
V
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
D.U.T.
L
50 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
RL
RG
PG.
VDD
VGS
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS
90%
BVDSS
IAS
VDS
ID
VDS
τ
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
2
50 Ω
0
10%
10%
tr
td(off)
Wave Form
VDD
Starting Tch
90%
VDS
VGS
0
RL
VDD
Data Sheet D20258EJ1V0DS
td(on)
ton
tf
toff
2SK4075B
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
40
100
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
80
60
40
20
35
30
25
20
15
10
5
0
0
0
25
50
75
100 125
0
150 175
25
50
75
100
125
150
175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
d
it e
Lim
)
V
0
=1
GS
ID(pul s e)
1
R
(
DS
(V
ID(DC)
PW
1
s
pa
t io
1
si
m
is
0
1
11
er
D
s
Po
w
1m
10
=
n
Li
m
1
0.1
TC = 25°C
Single Pulse
0.1
1
it e
d
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
100
)
on
Rt h(ch- A) = 125°C/W
100
10
Rt h( ch-C) = 3.47°C/W
1
0.1
Single Pulse
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D20258EJ1V0DS
3
2SK4075B
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
100
140
V GS = 10 V
ID - Drain Current - A
ID - Drain Current - A
120
100
80
4.5 V
60
40
10
Tch = 150°C
125°C
75°C
1
-25°C
-55°C
25°C
0.1
0.01
V DS = 10 V
Pulsed
20
Pulsed
0.001
0
0
0.2
0.4 0.6
0.8
1
1.2
1
1.4 1.6
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate Cut-off Voltage - V
2.5
2
1.5
1
V DS = 10 V
ID = 1 m A
1
-50
0
50
100
150
200
100
10
V GS = 4.5 V
10 V
0
1
10
100
1000
ID - Drain Current - A
4
4
10
25°C
-25°C
-55°C
1
0.1
V DS = 10 V
Pulsed
0.01
0.001
0.01
0.1
1
10
100
DRAIN TO SOURCE ON-STATERESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
Pulsed
0.1
3.5
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
5
3
Tch = 150°C
125°C
75°C
Tch - Channel Temperature - °C
15
2.5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
0
-100
2
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
0.5
1.5
Data Sheet D20258EJ1V0DS
15
Pulsed
10
ID = 13 A
25 A
50 A
5
0
0
5
10
15
VGS - Gate to Source Voltage - V
20
2SK4075B
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
14
12
ID = 13 A, V GS = 4.5 V
8
6
ID = 25 A, V GS = 10 V
4
2
Pulsed
0
-100
-50
0
50
100
150
Ciss
1000
Coss
V GS = 0 V
f = 1 MHz
10
0.01
200
10
100
td(of f )
tr
td(on)
tf
50
10
V DD = 32 V
20 V
8V
40
8
V GS
30
6
20
4
10
V DS
1
10
0
100
10
20
30
40
ID - Drain Current - A
QG - Gate Chage - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
2
ID = 50 A
Pulsed
0
1
0.1
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V DD = 20 V
V GS = 10 V
RG = 0 Ω
10
1
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
1000
td(on), tr, td(off), tf - Switching Time - ns
0.1
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
0
50
100
V GS = 10 V
100
4.5 V
10
0V
1
0.1
Pulsed
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
Cr ss
100
VGS - Gate to Source Voltage - V
10
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.01
0
0.5
10
di/dt = 100 A/μs
V GS = 0 V
1
0.1
1
1
10
100
IF – Diode Forward Current - A
VF(S-D) - Source to Drain Voltage - V
Data Sheet D20258EJ1V0DS
5
2SK4075B
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
2.3±0.1
1.0 TYP.
6.5±0.2
5.1 TYP.
4.3 MIN.
0.5±0.1
No Plating
3
1.14 MAX.
0.51 MIN.
2
0.8
1
6.1±0.2
10.4 MAX. (9.8 TYP.)
4.0 MIN.
4
No Plating
0 to 0.25
0.5±0.1
0.76±0.12
2.3
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.0
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
6
Data Sheet D20258EJ1V0DS
2SK4075B
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
Reel side
MARKING INFORMATION
K4075B
Abbreviation of part number
Pb-free plating marking
Lot code
RECOMMENDED SOLDERING CONDITIONS
The 2SK4075B should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Infrared reflow
Soldering Conditions
Maximum temperature (Package's surface temperature): 260°C or below
Recommended
Condition Symbol
IR60-00-3
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
P350
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D20258EJ1V0DS
7
2SK4075B
• The information in this document is current as of March, 2010. The information is subject to change without notice. For actual
design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date
specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an
NEC Electronics sales representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC
Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the
use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual
property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in
semiconductor product operation and application examples. The incorporation of these circuits, software and information in
the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes
no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and
information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree
and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property
or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient
safety measures in their design, such as redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The
"Specific" quality grade applies only to NEC Electronics products developed based on a customer-designated "quality
assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its
quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in
a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual
equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots.
"Special":
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-
"Specific":
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and
crime systems, safety equipment and medical equipment (not specifically designed for life support).
medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data
sheets or data books, etc.
If customers wish to use NEC Electronics products in applications not intended by NEC
Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness
to support a given application.
(Note 1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majorityowned subsidiaries.
(Note 2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined
above).
(M8E0909E)