bc859 - Rectron

BC859
SOT-23 Silicon Planar Epitaxial Transistors
TRANSISTORS(PNP)
FEATURES
* Ideally suited for automatic insertion
* For switching and AF amplifier applications
SOT-23
COLLECTOR
MECHANICAL DATA
*
*
*
*
3
BASE
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Marking: BC859=4D
0.055(1.40)
0.047(1.20)
1
2
EMITTER
0.005(0.14)
0.003(0.09)
0.045(1.15)
0.035(0.90)
0.027(0.70)
0.020(0.50)
0.004(0.12)
0.000(0.02)
0.102(2.60)
0.094(2.40)
0.018(0.48)
0.014(0.38)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
O
Ratings at 25 C ambient temperature unless otherwise specified.
0.019(2.00)
0.071(1.80)
1
3
0.118(3.00)
0.110(2.80)
2
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
SYMBOL
VALUE
UNITS
Collector–emitter voltage (+VBE = 1V)
-VCEX
max. 30
V
Collector–emitter voltage (open base)
-VCEO
max. 30
V
Collector current (peak value)
-ICM
max. 200
mA
Total power dissipation up to Tamb= 60 °C
Ptot
max. 250
mW
TJ
max. 150
Junction Temperature
Small–signal current gain
C
O
>125
-IC= 2 mA; –VCE= 5 V; f = 1 kHz
hfe
< 900
Transition frequency
-IC=10 mA;-VCE = 5 V;f = 100 MHz
fT
>100
MHz
F
typ. 1,2
< 4
dB
dB
F
< 4
dB
Noise figure at Rs = 2kΩ
-IC=200 µA;-VCE = 5 V;f = 30 Hz to 15 kHz
f = 1 KHz; B = 200 Hz
VD 2009-11
REV:O
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
CHARACTERISTICS
SYMBOL
MIN
MAX
UNITS
Collector–base voltage (open emitter)
-VCBO
-
30
V
Collector–emitter voltage (+VBE= 1 V)
-VCEX
-
30
V
Collector–emitter voltage (open base)
-VCEO
-
30
V
Emitter–base voltage (open collector)
-VEBO
-
5
V
-IC
-
100
mA
Collector current (peak value)
-ICM
-
200
mA
Emitter current (peak value)
IEM
-
200
mA
Base current (peak value)
-IBM
-
200
mA
Total power dissipation up to Tamb = 60 °C**
Ptot
-
250
mW
Storage temperature
Tstg
Junction temperature
TJ
Collector current (d.c.)
oC
-55 to +150
-
150
oC
THERMAL CHARACTERISTICS
Tj= Px(Rth j–t+ Rh t–s+ Rth s–a) + Tamb
Thermal resistance
From junction to tab
Rth j–t
60
K/W
From tab to soldering points
Rth t–s
280
K/W
From soldering points to ambient**
Rth s–a
90
K/W
IE= 0; -VCB = 30V; Tj= 25°C
-ICBO
Tj= 150°C
-ICBO
typ. 1
< 15
< 4
nA
nA
mA
Base–emitter voltage
-IC= 2 mA; -VCE = 5 V
-VBE
-IC= 10 mA; -VCE = 5 V
-VBE
typ. 650
600 to 750
< 820
mV
mV
mV
typ. 75
< 300
typ. 700
mV
mV
mV
-VBEsat
typ. 250
< 650
typ. 850
mV
mV
mV
Cc
typ. 4.5
pF
CHARACTERISTICS Tj = 25 °C unless otherwise specified
Collector cut–off current
Saturation voltages
-IC= 10 mA; -IB = 0,5 mA
-VCEsat
-VBEsat
-IC= 100 mA; -IB = 5 mA
Collector capacitance at f = 1 MHz
-IE = Ie = 0 ; -VCB = 10 V
-VCEsat
CHARACTERISTICS (Tj = 25 °C unless otherwise specified)
CHARACTERISTICS
SYMBOL
UNITS
Transition frequency at f = 100 MHz
-IC = 10 mA ; -VCE = 5 V
fT
> 100
Small–signal current gain at f = 1 kHz
-IC= 2 mA; -VCE = 5 V
hfe
125 to 800
-IC= 200 µA; -VCE = 5 V
f = 30 Hz to 15 kHz
F
typ. 1.2
< 4
dB
dB
f = 1 kHz; B = 200 Hz
F
typ. 1
< 4
dB
dB
MHz
Noise figure at RS = 2 kΩ
D.C. current gain
-IC= 2 mA; -VCE = 5 mA ; total range
A selections
B selections
C selections
hFE
hFE
hFE
hFE
125
125
220
420
to
to
to
to
800
250
475
800
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Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
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