RECTRON MMBTA42

MMBTA42
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* High breakdown voltage
* Low collector-emitter saturation voltage
* Complementary to MMBTA92 (NPN)
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
1
BASE
0.055(1.40)
0.047(1.20)
2
EMITTER
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.019(2.00)
0.071(1.80)
Ratings at 25 o C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
1
0.118(3.00)
3 0.110(2.80)
2
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
RATINGS
SYMBOL
VALUE
UNITS
Collector Current-Continuous
IC
0.3
A
Collector Power Dissipation
PC
350
mW
Max. Operating Temperature Range
TJ
150
o
C
TSTG
-55 to +150
o
C
Storage Temperature Range
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
MIN.
TYP.
MAX.
UNITS
Collector-base breakdown voltage (IC=100uA,IE=0)
V(BR)CBO
300
-
-
V
Collector-emitter breakdown voltage (IC=1mA,IB=0)
V(BR)CEO
300
-
-
V
Emitter-Base breakdown voltage (IE=100uA,IC=0)
V(BR)EBO
5
-
-
V
ICBO
-
-
0.25
uA
Collector cut-off current (VCB=200V,IE=0)
Emitter cut-off current (VEB=5V,IC=0)
IEBO
-
-
0.1
uA
(VCE=10V,IC=1mA)
hFE(1)
60
-
-
-
(VCE=10V,IC=10mA)
hFE(2)
100
-
200
-
(VCE=10V,IC=30mA)
hFE(3)
60
-
-
-
Collector-emitter saturation voltage (IC=20mA,IB=2mA)
VCE(sat)
-
-
0.2
V
Base-emitter saturation voltage (IC=20mA,IB=2mA)
VBE(sat)
-
-
0.9
V
Transition frequency (VCE=20V,IC=10mA,f=30MHz)
fT
50
-
-
MHz
DC current gain
Note: "Fully ROHS Complant", "100% Sn plating (Pb-free)".
2007-5
VCE =5V
hFE, DC CURRENT GAIN
140
120
125 C
O
100
25OC
80
60
-40OC
40
20
0.1
1
10
100
VCESAT, COLLECTOR-EMITTER VOLTAGE (V)
RATING AND CHARACTERISTICS CURVES ( MMBTA42 )
0.3
0.2
0.15
0.1
-40OC
25 C
O
125OC
0.4
10
10
100
Figure 2 Collector-Emitter Saturation Voltage
vs. Collector Current
VBE(ON), BASE-EMITTER VOLTAGE (V)
VBESAT, BASE-EMITTER VOLTAGE (V)
b =10
1
1
IC, COLLECTOR CURRENT (mA)
1
0.2
0.1
25OC
-40OC
0.05
Figure 1 DC Current Gain vs. Collector Current
0.6
125OC
0.1
IC, COLLECTOR CURRENT (mA)
0.8
b =10
0.25
100
1
VCE =1V
0.8
-40OC
25OC
0.6
125OC
0.4
0.2
0.1
1
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
Figure 4 Base-Emitter ON Voltage vs.
Collector Current
100
RATING AND CHARACTERISTICS CURVES ( MMBTA42 )
100
VCB =150V
CAPACITANCE (pF)
50
10
20
Ceb
10
5
Ccb
2
1
25
50
75
100
125
1
150
TA, AMBIENT TEMPERATURE (OC)
10
1
0.75
0.5
0.25
0
25
1000
Figure 6 Collector-Base and Emitter-Base Capacitance
vs. Reverse Bias Voltage
1
0
100
REVERSE BIAS VOLTAGE (V)
Figure 5 Collector-Cut off Current vs.
Ambient Temperature
PD, POWER DISSIPATION (W)
ICBO, COLLECTOR CURRENT (nA)
100
50
75
100
125
TEMPERATURE (OC)
Figure 7 Power dissipation vs.
Ambient Temperature
150
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specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
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