MMBT5401 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 160 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 BASE 0.055(1.40) 2 EMITTER 0.047(1.20) 0.006(0.15) 0.003(0.08) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1 0.019(2.00) 0.071(1.80) Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. 0.118(3.00) 3 0.110(2.80) 2 For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (@ TA = 25OC unless otherwise noted) RATINGS SYMBOL VALUE UNITS Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C PD 300 mW Max. Operating Temperature Range TJ 150 o C TSTG -55 to +150 o C o Storage Temperature Range O ELECTRICAL CHARACTERISTICS (@ TA = 25OC unless otherwise noted) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes : 1. Alumina=0.4*0.3*0.024in.99.5% alumina 2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)". SYMBOL MIN. TYP. MAX. R qJA - - 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = -1.0 mAdc, I B = 0) V(BR)CEO -150 - Vdc Collector-Base Breakdown Voltage (I C = -100uAdc, I E = 0) V(BR)CBO -160 - Vdc Emitter-Base Breakdown Voltage (I E = -10uAdc, I C = 0) V(BR)EBO -5.0 - Vdc - -50 nAdc - -50 uAdc 50 - 60 240 Collector Cutoff Current (V CB = -120Vdc,IE=0) (V CE = -120Vdc, IE=0, TA= 100 OC) ICES ON CHARACTERISTICS DC Current Gain (I C = -1.0mAdc, V CE = -5.0Vdc) (I C = -10mAdc, V CE = -5.0Vdc) hFE - (I C = -50mAdc, V CE = -5.0Vdc) 50 - Collector-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc) - -0.2 - -0.5 - -1.0 - -1.0 100 300 MHz (I C = -50mAdc, I B = -5.0mAdc) Base-Emitter Saturation Voltage (I C = -10Adc, I B =-1.0mAdc) (I C = -50mAdc, I B = -5.0mAdc) VCE(sat) VBE(sat) Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = -10mAdc, V CE = -10Vdc, f= 100MHz) fT Cobo - 6.0 pF Small-Signal Current Gain (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) hfe 40 200 - Noise Figure (V CE = -5.0Vdc, I C = -200uAdc, RS=10 W, f= 1.0kHz) NF - 8.0 dB Output Capacitance (V CB = -10Vdc, I E = 0, f= 1.0MHz) RATING AND CHARACTERISTICS CURVES ( MMBT5401 ) 200 hFE, CURRENT GAIN 150 O TJ=125 C 100 O 25 C 70 50 O -55 C VCE = -1.0V VCE = -5.0V 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 10 20 50 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 0.5 10 mA 30 mA 100 mA 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 IB, BASE CURRENT (mA) Figure 2. Collector Saturation Region 102 101 100 1.0 0.9 VCE= 30V O TJ=125 C O 75 C 10-1 REVERSE O 25 C 10-2 10-3 0.3 0.2 0.1 FORWARD 0.7 0.6 0.1 0.2 0.3 0.4 0.3 0.2 0.4 0.5 0.6 0.7 VBE(sat) @ IC/IB = 10 0.5 0.1 0 O TJ=25 C 0.8 IC=ICES V, VOLTAGE (V) IC, COLLECTOR CURRENT (uA) 103 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Collector Cut-Off Region Figure 4. "On" Voltages 50 100 2.5 2.0 100 70 50 TJ = -55 Cto 135 C O O 1.5 C, CAPACITANCE (pF) O QV, TEMPERATURE COEFFICIENT (mV/ C) RATING AND CHARACTERISTICS CURVES ( MMBT5401 ) 1.0 0.5 0 QVC for VCE(sat) -0.5 -1.0 -1.5 -2.0 -2.5 0.1 QVB for VBE(sat) 0.2 0.3 0.5 1.0 TJ =25 C O 30 Cibo 20 10 7.0 5.0 Cobo 3.0 2.0 2.0 3.0 5.0 10 1.0 0.2 0.3 0.5 0.7 20 30 50 100 IC, COLLECTOR CURRENT (mA) Figure 5.Temperature Coefficients 1000 700 500 2.0 3.0 5.0 7.0 10 20 Figure 6.Capacitances 2000 IC/IB = 10 O TJ =25 C tr @ VCC = 120V 300 1000 700 500 tr @ VCC = 30V 200 t, TIME (ns) t, TIME (ns) 1.0 VR, REVERSE VOLTAGE (VOLTS) 100 70 50 30 td @ VBE(off) = 1.0 V 20 10 0.2 0.3 0.5 1.0 VCC= 120 V 2.0 3.0 5.0 10 20 30 50 100 IC, COLLECTOR CURRENT (mA) Figure 7.Turn-On Time 300 200 IC/IB = 10 O TJ =25 C tf @ VCC = 120V tf @ VCC = 30 V ts @ VCC = 120V 100 70 50 30 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 IC, COLLECTOR CURRENT (mA) Figure 8.Turn-Off Time 200 DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. 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