1/4 STRUCTURE Silicon Monolithic Integrated Circuit NAME OF PRODUCT DC-AC Inverter Control IC TYPE ＢＤ９８８４ＦＶ FUNCTION ・2ch control with Half-bridge ・Lamp current and voltage sense feed back control ・Sequencing easily achieved with Soft Start Control ・Short circuit protection with Timer Latch ・Under Voltage Lock Out ・Short circuit protection with over voltage ・Mode-selectable the operating or stand-by mode by stand-by pin ・2ch BURST mode selectivity in-phase or reversed phase ・Synchronous operating the other BD9884FV IC’s ○Absolute Maximum Ratings（Ta = 25℃） Parameter Supply Voltage Operating Temperature Range Storage Temperature Range Power Dissipation Maximum Junction Temperature * Symbol VCC Topr Tstg Pd Tjmax Limits 12 -35～+85 -55～+125 850* +125 Unit V ℃ ℃ mW ℃ Pd derated at 8.5mW/℃ for temperature above Ta = 25℃ (When mounted on a PCB 70.0mm×70.0mm×1.6mm) 〇Recommended operating condition Parameter Supply voltage CT oscillation frequency BCT oscillation frequency Symbol VCC fCT fBCT Limits 5.0～11.0 20～150 0.05～1.00 Unit V kHz kHz Status of this document The Japanese version of this document is the official specification. Please use the translation version of this document as a reference to expedite understanding of the official version. If these is any uncertainty in translation version of this document, official version takes priority. REV. D 2/4 ○Electric Characteristics（Ta=25℃，VCC=7V） MIN. Limits TYP. MAX. Icc1 Icc2 － － 9.0 4 17.0 10 mA μA Vovf 2.70 3.00 3.30 V VstH1 2.4 － VCC V VstH2 1.4 － 1.8 V System ＯＮ VstL ⊿Vst -0.3 0.10 － 0.25 0.5 0.40 V V System ＯＦＦ Vcp Icp 1.8 0.5 2.0 1.0 2.2 1.5 V μA OSC Max voltage ICT VoscH 1.35/RT 1.8 1.5/RT 2.0 1.65/RT 2.2 A V OSC Min voltage VoscL 0.3 0.5 0.7 V fCT=60kHz MAXDUTY 44 46.5 49 % fCT=60kHz Parameter （（WHOLE DEVICE） ） Operating current Stand-by current （（OVER VOLTAGE DETECT）） FB over voltage detect voltage （（STAND BY CONTROL）） Stand-by voltage H1 (BURST mode in reverse phase) Stand-by voltage H2 (BURST mode in phase) Stand-by voltage L Stand-by hysteresis （（TIMER LATCH）） Timer Latch voltage Timer Latch current （（OSC BLOCK）） OSC constant current MAX DUTY Symbol Unit Conditions CT=0.5V System ＯＮ fCT=60kHz Iss 1.0 2.0 3.0 μA Visc Vss RSRT 0.45 2.0 － 0.60 2.2 200 0.75 2.4 400 V V Ω VuvloH VuvloL Vuvlo1 Vuvlo2 4.100 3.900 1.900 2.100 4.300 4.100 2.000 2.200 4.500 4.300 2.100 2.300 V V V V IS threshold voltage Vis 1.220 1.250 1.280 V VS threshold voltage IS source current 1 IS source current 2 VS source current （（OUTPUT BLOCK） ） Pch output voltage H Nch output voltage H Pch output voltage L Nch output voltage L Pch output sink resistance Pch output source resistance Nch output sink resistance Nch output source resistance （（BURST MODE BLOCK）） Vvs 1.220 1.250 1.280 V Iis1 Iis2 Ivs － 13.0 － － 20.0 － 1.5 27.0 1.0 μA μA μA VoutPH VoutNH VoutPL VoutNL RsinkP RsourceP RsinkN RsourceN VCC-0.3 VCC-0.3 － － － － － － VCC-0.1 VCC-0.1 0.1 0.1 8 10 8 10 － － 0.3 0.3 16 20 16 20 V V V V Ω Ω Ω Ω BOSC Max voltage VburH 1.92 2.0 2.08 V fBCT=0.3kHz BOSC Min Voltage VburL 0.4 0.5 0.6 V fBCT=0.3kHz BOSC constant current IBCT 1.35/BRT 1.5/BRT 1.65/BRT A VREG IREG Vref 3.038 5.0 1.220 3.100 － 1.250 3.162 － 1.280 V mA V VCOMPH VCOMPL 2.20 0.590 2.5 0.640 2.80 0.690 V V VPH VPL 2.9 － 3.1 － 3.3 0.5 V V Soft start current IS COMP detect Voltage SS COMP detect voltage SRT ON resistance （（UVLO BLOCK）） Operating voltage Lock out voltage Operating voltage (External UVLO) Lock out voltage (External UVLO) （（FEED BACK BLOCK）） （（REG BLOCK）） REG output voltage REG source current VREF voltage （（COMP BLOCK）） Over voltage detect Under voltage detect （（PROTECT CLOCK）） Normal output voltage Protect output voltage （This product is not designed for normal operation with in a radio active environment.） REV. D DUTY=2.0V DUTY=0V、IS=0.5V Isink = Isource Isink = Isource 10mA = 10mA 10mA = 10mA 3/4 〇Package Dimensions Device Mark (Include BURR 10.35) BD9884FV １ Lot No. SSOP-B28 (Unit:mm) 〇Block Diagram 〇Pin Description CT REG VREF VCC REG BLOCK STB RT OSC BRT BCT DUTY BOSC DUTY BLOCK Pin No. 1 Pin Name DUTY 2 BRT 3 BCT 4 RT 5 SRT 6 CT 7 8 GND FB1 Function Control PWM mode and BURST mode External resistor from BRT to GND for adjusting the BURST triangle oscillator External capacitor from BCT to GND for adjusting the BURST triangle oscillator External resistor from SRT to RT for adjusting the triangle oscillator External resistor from SRT to RT for adjusting the triangle oscillator External capacitor from CT to GND for adjusting the triangle oscillator GROUND Error amplifier output① 9 IS1 Error amplifier input① SYSTEM ON/OFF STB BLOCK VCC UVLO BLOCK UVLO SS FB1 IS1 VS1 VCC F/B BLOCK① SS PWM BLOCK① LOGIC BLOCK ① OUTPUT BLOCK① PWM BLOCK② LOGIC BLOCK ② OUTPUT BLOCK② CT FB2 IS2 VS2 P1 N1 VCC F/B BLOCK② SS CT P2 N2 PGND GND PROTECT BLOCK COMP1 COMP2 SCP 10 VS1 Error amplifier input② 11 12 13 FB2 IS2 VS2 14 VREF Error amplifier output② Error amplifier input③ Error amplifier input④ Reference voltage for ISNECE,VSENCE error amplifier 15 FAIL Protect clock output 16 17 18 19 STB COMP1 COMP2 UVLO Stand-by switch Under, over voltage detect for 1ch Under, over voltage detect for 2ch External Under Voltage Lock OUT 20 REG 21 SS 22 SCP 23 P2 24 N2 25 PGND 26 N1 FAIL SRT REV. D Internal regulator output External capacitor from SS to GND for Soft Start Control External capacitor from SCP to GND for Timer Latch FET driver for 2ch FET driver for 2ch Ground for FET drivers FET driver for 1ch 27 P1 FET driver for 1ch 28 VCC Supply voltage input 4/4 〇NOTE FOR USE １． When designing the external circuit, including adequate margins for variation between external devices and the IC.Use adequate margins for steady state and transient characteristics. ２． Recommended Operating Range The circuit functionality is guaranteed within of ambient temperature operation range as long as it is within recommended operating range. The standard electrical characteristic values cannot be guaranteed at other voltages in the operating ranges, however, the variation will be small. ３． Mounting Failures Mounting failures, such as misdirection or miscounts, may harm the device. ４． Electromagnetic Fields A strong electromagnetic field may cause the IC to malfunction. ５. The GND pin should be the location within ±0.3V compared with the PGND pin ６． BD9884FV has the short circuit protection with Thermal Shut Down System. When STB or Vcc pin re-supplied, They enables to cancel the latch. If It rise the temperature of the chip more than 170℃(TYP), It make the external FET OFF ７． Absolute maximum ratings are those values that, if exceeded, may cause the life of a device to become significantly shortened. Moreover, the exact failure mode caused by short or open is not defined. Physical countermeasures, such as a fuse, need to be considered when using a device beyond its maximum ratings. ８． About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage is switching. Make sure to leave adequate margin for this IC variation. ９． On operating Slow Start Control (SS is less than 2.2V), It does not operate Timer Latch. １０． By STB voltage, BD9884FV is changed to 3 states. Therefore, do not input STB pin voltage between one state and the other state (0.5～1.4V, 1.8～2.4V). １１．The pin connected a connector need to connect to the resistor for electrical surge destruction. １２．This IC is a monolithic IC which (as shown is Fig-1)has P+ substrate and between the various pins. A P-N junction is formed from this P layer of each pin. For example, the relation between each potential is as follows, ○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.) ○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.) Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits as well as operation faults and physical damage. Accordingly you must not use methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND(P substrate)voltage to an input pin. Transistor (NPN) Resistance (PinA) B (PinB) E C Ｃ GND P P＋ N P＋ N Ｎ N Ｎ P substrate GND Parasitic diode N P substrate GND Parasitic diode (PinB) (PinA) B CＣ Ｂ EＥ Parasitic diode GND GND Other adjacent components Parasitic diode Fig-1 Simplified structure of a Bipolar IC REV. D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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