ROHM RBE1VA20A

Data Sheet
Schottky Barrier Diode
RBE1VA20A
Dimensions (Unit : mm)
Applications
General rectification
Land size figure (Unit : mm)
1.1
0.17±0.1
0.05
1.9±0.1
2.5±0.2
Features
1)Small mold type (TUMD2)
2)High reliability
0.8 0.5
2.0
1.3±0.05
TUMD2
Structure
0.8±0.05
0.6±0.2
0.1
ROHM : TUMD2
dot (year week factory)
Taping dimensions (Unit : mm)
0.25±0.05
8.0±0.2
2.75
1.43±0.05
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
VR
Reverse voltage (DC)
Average rectified forward current
Io
IFSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
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IR
4.0±0.1
Limits
φ1.0±0.2
0
0.9±0.08
Unit
V
V
A
A
C
C
30
20
1
3
125
40 to 125
Min.
Typ.
Max.
Unit
-
-
0.53
V
-
-
200
μA
1/4
2.8±0.05
φ1.55±0.1
0
1.75±0.1
2.0±0.05
3.5±0.05
4.0±0.1
Conditions
IF=1A
VR=20V
2011.10 - Rev.A
Data Sheet
RBE1VA20A
100000
10
REVERSE CURRENT:IR(mA)
FORWARD CURRENT:IF(A)
10000
Ta=125°C
1
Ta=75°C
0.1
Ta=25°C
Ta=125°C
1000
Ta=75°C
100
Ta=25°C
10
Ta=-25°C
1
Ta=-25°C
0.1
0.01
0
100
200
300
400
500
600
0
700
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
10
15
20
25
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
475
100
f=1MHz
470
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
5
10
Ta=25°C
IF=1A
n=30pcs
465
460
455
450
445
AVE:454.0mV
440
435
430
1
425
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
65
Ta=25°C
VR=20V
n=30pcs
90
80
AVE:83.23μA
70
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(μA)
100
64
AVE:62.8pF
63
62
60
61
50
60
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Ta=25°C
f=1MHz
VR=0V
n=10pcs
2/4
2011.10 - Rev.A
Data Sheet
RBE1VA20A
20
25
1cyc
IFSM
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
30
8.3ms
20
AVE:12.6A
15
10
5
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
15
10
AVE:5.8ns
5
0
0
trr DISPERSION MAP
IFSM DISPERSION MAP
30
30
IFSM
IFSM
25
8.3ms
20
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
25
8.3ms
1cyc
15
10
t
20
15
10
5
5
0
0
1
10
1
100
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1
1000
Rth(j-a)
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Mounted on epoxy board
100
Rth(j-c)
10
1
0.001
D=1/2
Sin(θ＝180)
0.5
DC
0
0.01
0.1
1
10
100
1000
0
TIME:t(s)
Rth-t CHARACTERISTICS
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0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
3/4
2011.10 - Rev.A
Data Sheet
RBE1VA20A
1
3
0A
Io
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
0V
0.5
DC
Sin(θ＝180)
D=1/2
VR
D=t/T
VR=10V
Tj=125°C
t
T
2
D=1/2
DC
1
Sin(θ＝180)
0
0
0
10
20
30
0
25
50
3
100
125
30
Io
t
T
2
AVE:25.0kV
25
VR
D=t/T
VR=10V
Tj=125°C
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
0A
0V
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
75
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
DC
1
D=1/2
20
15
10
AVE:2.6kV
5
Sin(θ＝180)
0
0
0
25
50
75
100
125
C=200pF
R=0Ω
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
4/4
2011.10 - Rev.A
Notice
Notes
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R1120A