High Power GaN Solutions for Next Generation Radar David Aichele Director, RFMD Power Business Unit EuMW October 2012 Introduction to RFMD GaN-on-SiC… • Proven, reliable, volume supplier of III-V Compound Semiconductor solutions • Released 2 GaN-on-SiC processes and 3rd in development GaN1 optimized for peak power and efficiency GaN2 optimized for linearity • Largest capacity GaN fab & assembly, test facility able to meet volume/price demands • Leader in GaN volume production, shipped >400K devices • Product offering (Discrete/MMIC/MCM) for both commercial and military radar applications Global Market for GaN Solid-State RF Power Devices 2012 Worldwide TAM by Region, ~$1B 2012 Worldwide TAM by Application, ~$1B Industrial 7% Americas 45% Asia 25% 2012 Worldwide SAM for GaN RF HPA, ~$0.3B Milcom 9% EW 4% Radar 22% Europe 30% Cellular BTS 49% Source: RFMD Security 4% Broadcast 5% Commercial 20% Defense 80% Civilian and Military Radar High Power Amplifiers Highly efficient and reliable L- and S-Band radar systems Radar Market Drivers S-Band Ship Radar L-Band Ground Radar • • • • Provide larger detection area Improve early detection Reduce size and weight Improve reliability Why GaN? • Higher efficiency 380W Pulsed Amplifier Product Platforms – Reduce heatsink requirements, smaller size – Lower thermal, increase life expectancy • Wide bandwidth – Replace 2 or 3 amplifiers with 1 amplifier – Improve engineering efficiency • Higher power density and operating voltage; increase power with same form factor 4 GaN-on-SiC Offers Superior Performance & Excellent Reliability 3GHz Multiple Competing Technologies Few Competing Technologies 1000 Power (Watts) SiC MESFET 100 GaN HEMT Silicon GaAs HBT 10 1 GaAs HEMT 0.1 1 10 Frequency (GHz) 100 Advantages & Benefits Reliability Results • Linearity & Bandwidth - Improved BW performance • MTTF (95% CB) 1.9 x 107 Hrs • Green - More power efficient per mW of RF power • EA 2.1 eV • Power and Size - More RF power per mm2 • TCHANNEL 200 oC • Opex/Capex - Lower BOM and operating costs • VDS 65 V High Volume, Low Cost Manufacturing Automation using precision equipment adds consistency to the product Manuf. Cost, % of Base Unit Cost (%) Automated Wafer Process Auto Eutectic/Epoxy Die Attach Auto Wirebond RFMD Fab Learning Curve = 79% (Si Industry: 70% - 80%) 2X increase cumulative area shipped, manufacturing costs drop 21% GaN in a high volume GaAs fab lowers wafer manufacturing costs 6 GaN Production Process Flow • Wafer-level “Known Good Die” testing • WAT - Wafer Acceptance Test • Product Assembly • Early Life Screen testing • DC/RF functional test (Guaranteed Data Sheet Mins) Example of KGD Gate Leakage Sweep catching Gate Defect GaN High Yield Production Test • 100% RF testing at set PIN over frequency (POUT, gain, eff.) • Single tune production test fixture with clamp • Large distribution >1400 S-Band 380W Test Limits High Peak Power Radar Amplifiers • • • • • • • • 50 to 65V Drain Bias 380W Pulsed Power 35 to 50ohm I/O 17mm x 20mm, Small Form Factor • 1.1 W/sq mm • 55% Drain Efficiency • • • • 50 to 65V Drain Bias 500W Pulsed Power 35 to 50ohm I/O 17mm x 20mm, Small Form Factor • 1.4 W/sq mm • 55% Drain Efficiency 65V+ Drain Bias 1000W Pulsed Power 35 to 50ohm I/O 17mm x 20mm, Small Form Factor • 2.8 W/sq mm • 60% Drain Efficiency • Thermally Enhanced GaN-on-Diamond (NJTT Initiative) Multi-Chip Module Solutions • High level of integration • Hybrid GaN, GaAs & Passive Assembly • Large number of die placement • Eutectic and epoxy die attach • >90% volume assembly yield • Internal matching substrate provides high impedance at I/O • Lowest cost multi-stage GaN power amplifiers • Export controls either EAR99 or 3A001b.4.a GaN FET GaAs/Passive Substrate High Performance MCM Amplifiers • L-Band Pulsed Amplifier 1.2-1.4GHz RFHA1028 Gain/Output Power versus Frequency Pulsed • Two stage, flange package 20mm x 17mm 26.5 Gain 26 25 50 24.5 24 1200 • S-Band Pulsed Amplifier 3.1-3.5GHz • Power output 70W • Power gain 25dB, DE ~45% • Export 3A001b.4.a 1250 1300 Frequency(MHz) 49 1400 1350 RFHA1021U, Gain & Efficiency versus Output Power Pulse, 100us, Duty Cycle 10%, Vd1&2=50V, Idq1=44mA, Idq2=220mA Gain (dB) • Two-stage, flange package 8mm x 8mm • Operation VD 50V, IDQ1 42mA, IDQ2 220mA 51 25.5 • Export EAR99 • Pulse condition 100us PW, 10% DC Output Power 32 50 30 45 28 40 26 35 24 30 22 25 20 20 18 15 16 10 14 5 12 0 30 32 34 36 38 40 42 44 46 48 50 Output Power (dBm) Gain 3.1 GHz Gain 3.3 GHz Gain 3.53GHz Eff . 1 GHz Eff . 3 GHz Eff . 5 GHz Output Power (dBm) 52 Efficiency (%) • Power gain 25dB, DE ~50% 27 Gain (dB) • Power output 160W 53 27.5 • Pulse condition 1ms PW, 10% DC • Operations VD 45V, IDQ1 44mA, IDQ2 306mA 10% Duty Cycle, Pulse Width=1ms, VD=45V IDQ=350mA 28 Summary • GaN-on-SiC technology adoption continues for high power commercial and military radar applications • High efficiency GaN amplifiers provide robust, reliable solutions addressing need for more power in same footprint OR same power in smaller footprint • High levels of integration provide compact, cost effective amplifier solution • GaN products and services available include foundry, die, packaged discrete transistors, and amplifiers