High Power GaN Solutions for Next Generation Radar

High Power GaN Solutions for
Next Generation Radar
David Aichele
Director, RFMD Power Business Unit
EuMW October 2012
Introduction to RFMD GaN-on-SiC…
•  Proven, reliable, volume supplier of III-V Compound
Semiconductor solutions
•  Released 2 GaN-on-SiC processes and 3rd in development
Ø  GaN1 optimized for peak power and efficiency
Ø  GaN2 optimized for linearity
•  Largest capacity GaN fab & assembly, test facility able to
meet volume/price demands
•  Leader in GaN volume production, shipped >400K devices
•  Product offering (Discrete/MMIC/MCM) for both commercial
and military radar applications
Global Market for GaN Solid-State RF Power Devices
2012 Worldwide TAM by
Region, ~$1B
2012 Worldwide TAM by
Application, ~$1B
Industrial 7% Asia Americas 25% 45% 2012 Worldwide SAM for
GaN RF HPA, ~$0.3B
Milcom 9% EW 4% Radar 22% Europe 30% Cellular BTS 49% Source: RFMD
Security 4% Broadcast 5% Commercial 20% Defense 80% Civilian and Military Radar High Power Amplifiers
Highly efficient and reliable L- and S-Band radar systems
Radar Market Drivers
S-Band Ship Radar
L-Band Ground Radar
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Provide larger detection area
Improve early detection
Reduce size and weight
Improve reliability
Why GaN?
•  Higher efficiency
380W Pulsed
Amplifier
Product Platforms
–  Reduce heatsink requirements, smaller size
–  Lower thermal, increase life expectancy
•  Wide bandwidth
–  Replace 2 or 3 amplifiers with 1 amplifier
–  Improve engineering efficiency
•  Higher power density and operating
voltage; increase power with same form
factor
4
GaN-on-SiC Offers Superior
Performance & Excellent Reliability
3GHz
Multiple
Competing
Technologies
Few
Competing
Technologies
1000
Power (Watts)
SiC MESFET
100
GaN HEMT
Silicon
GaAs HBT
10
1
GaAs HEMT
0.1
1
10
Frequency (GHz)
100
Advantages & Benefits
Reliability Results
•  Linearity & Bandwidth - Improved BW performance
•  MTTF (95% CB)
1.9 x 107
Hrs
•  Green - More power efficient per mW of RF power
•  EA
2.1
eV
•  Power and Size - More RF power per mm2
•  TCHANNEL
200
oC
•  Opex/Capex - Lower BOM and operating costs
•  VDS
65
V
5
High Volume, Low Cost Manufacturing
Automation using precision equipment adds consistency to the product
Manuf. Cost, % of Base Unit Cost (%)
Automated Wafer Process
Auto Eutectic/Epoxy Die Attach
Auto Wirebond
q RFMD Fab Learning Curve = 79% (Si Industry: 70% - 80%)
q 2X increase cumulative area shipped, manufacturing costs drop 21%
q GaN in a high volume GaAs fab lowers wafer manufacturing costs
6
GaN Production Process Flow
•  Wafer-level “Known Good Die” testing
•  WAT - Wafer Acceptance Test
•  Product Assembly
•  Early Life Screen testing
•  DC/RF functional test
(Guaranteed Data Sheet Mins)
Example of KGD Gate Leakage
Sweep catching Gate Defect
7
GaN High Yield Production Test
•  100% RF testing at set PIN over frequency (POUT, gain, eff.)
•  Single tune production test fixture with clamp
•  Large distribution >1400 S-Band 380W
Test
Limits
8
High Peak Power Radar Amplifiers
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50 to 65V Drain Bias
380W Pulsed Power
35 to 50ohm I/O
17mm x 20mm,
Small Form Factor
•  1.1 W/sq mm
•  55% Drain Efficiency
• 
• 
• 
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50 to 65V Drain Bias
500W Pulsed Power
35 to 50ohm I/O
17mm x 20mm,
Small Form Factor
•  1.4 W/sq mm
•  55% Drain Efficiency
65V+ Drain Bias
1000W Pulsed Power
35 to 50ohm I/O
17mm x 20mm,
Small Form Factor
•  2.8 W/sq mm
•  60% Drain Efficiency
•  Thermally Enhanced
GaN-on-Diamond
(NJTT Initiative)
Multi-Chip Module Solutions
•  High level of integration
‒  Hybrid GaN, GaAs & Passive Assembly
‒  Large number of die placement
‒  Eutectic and epoxy die attach
•  >90% volume assembly yield
•  Internal matching substrate provides high
impedance at I/O
•  Lowest cost multi-stage GaN power
amplifiers
GaN
FET
GaAs/Passive
Substrate
•  Export controls either EAR99 or 3A001b.4.a
10
High Performance MCM Amplifiers
•  L-Band Pulsed Amplifier 1.2-1.4GHz
RFHA1028%Gain/Output%Power%versus%Frequency%Pulsed%
‒ Two stage, flange package 20mm x 17mm
26.5#
Gain#
26#
Output#Power#
51#
25.5#
25#
50#
Output%Power%(dBm)%
52#
24.5#
24#
1200#
‒ Export EAR99
•  S-Band Pulsed Amplifier 3.1-3.5GHz
1250#
1300#
Frequency(MHz)%
49#
1400#
1350#
RFHA1021U,%Gain%&%Efficiency%versus%Output%Power%
Pulse,%100us,%Duty%Cycle%10%,%Vd1&2=50V,%Idq1=44mA,%Idq2=220mA%
32"
30"
45"
‒ Pulse condition 100us PW, 10% DC
28"
40"
26"
35"
24"
30"
22"
25"
20"
20"
18"
15"
‒ Power gain 25dB, DE ~45%
16"
10"
14"
5"
‒ Export 3A001b.4.a
12"
‒ Operation VD 50V, IDQ1 42mA, IDQ2 220mA
‒ Power output 70W
Gain%(dB)%
‒ Two-stage, flange package 8mm x 8mm
50"
0"
30"
32"
34"
36"
38"
40"
42"
44"
46"
48"
50"
Output%Power%(dBm)%
Gain%3.1%GHz%
Gain%3.3%GHz%
Gain%3.5%GHz%
Eff%3.1%GHz%
Eff%3.3%GHz%
Eff%3.5%GHz%
Efficiency%(%)%
‒ Power gain 25dB, DE ~50%
27#
Gain%(dB)%
‒ Power output 160W
53#
27.5#
‒ Pulse condition 1ms PW, 10% DC
‒ Operations VD 45V, IDQ1 44mA, IDQ2 306mA
10%%Duty%Cycle,%Pulse%Width=1ms,%VD=45V%IDQ=350mA%
28#
Summary
•  GaN-on-SiC technology adoption continues for high
power commercial and military radar applications
•  High efficiency GaN amplifiers provide robust, reliable
solutions addressing need for more power in same
footprint OR same power in smaller footprint
•  High levels of integration provide compact, cost
effective amplifier solution
•  GaN products and services available include foundry,
die, packaged discrete transistors, and amplifiers