preliminary

PRELIMINARY
RFHA3960
28V/48V 3Watts/6.3Watts GaN RF Power Amplifier
The RFHA3960 is a 28V, 3W and 48V, 6.3W High Power discrete
Amplifier designed for commercial Wireless Infrastructure, Cellular and
WiMAX Infrastructure, Industrial/Scientific/Medical and General Purpose
broadband Amplifier application. Using an advanced high power density
Gallium Nitride (GaN) semiconductor process, these high-performance
amplifiers achieve high efficiency, linearity and flat gain over a broad
frequency range in a single amplifier design. The RFHA3960 is an
unmatched GaN transistor packaged in a plastic over-molded SOIC, 8
pin package. The package provides excellent thermal stability through
the use of advanced heat sink and power dissipation technologies.
VGS
RFHA3960
Package: Plastic Over Molded, 8pin, SOIC8
Features
■
Broadband Operation DC to 6GHz
■
Advanced GaN HEMT Technology
■
Advanced Heat-Sink Technology
■
28V Operation Typical P3dB
Performance at 2.5GHz



VDS
RF OUT
Pin 6,7
RF IN
Pin 2,3
■
48V Operation Typical P3dB
Performance at 2.5GHz



GND
BASE
■
Output Power 3W at 2.5GHz
Drain Efficiency 57%
Small Signal Gain = 16dB
Output Power 6.3W at 2.5GHz
Drain Efficiency 50%
Small Signal Gain = 15.5dB
-40°C to 85°C Operating
Temperature
Functional Block Diagram
Ordering Information
Applications
RFHA3960S2
Sample bag with 2 pieces
■
Commercial Wireless Infrastructure
RFHA3960SB
Bag with 5 pieces
■
Cellular and WiMAX.Infrastructure
RFHA3960SQ
Bag with 25 pieces
■
Civilian and Military Radar
RFHA3960SR
Short reel with 100 pieces
■
RFHA3960TR7
7” reel with 500 pieces
General Purpose Broadband
Amplifier
RFHA3960TR13
13” reel with 2500 pieces
■
Public Mobile Radio
RFHA3960PCBA-410
Fully assembled evaluation board 2400 to
2600MHz, 28V and 48V operation
■
Industrial, Scientific and Medical
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
®
DS131206
®
RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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RFHA3960
PRELIMINARY
Absolute Maximum Ratings
Parameter
Rating
Unit
Drain Voltage (VD)
150
V
Gate Voltage (VG)
-8 to +2
V
50
V
Operational Voltage
Ruggedness (VSWR)
10:1
Storage Temperature Range
-55 to +125
°C
Operating Temperature Range (TC)
-40 to +85
°C
200
°C
Operating Junction Temperature (TJ)
Human Body Model
Class 1A
MTTF (TJ < 200°C, 95% Confidence Limits)*
1.8E + 07
MTTF (TJ < 250°C, 95% Confidence Limits)*
1.4E + 05
Thermal Resistance, RTH (junction to case) measured at TC =
85°C, DC bias only
TBD
Hours
Caution! ESD sensitive device.
RFMD Green: RoHS status based on EU
Directive 2011/65/EU (at time of this
document revision), halogen free per IEC
61249-2-21, < 1000ppm each of antimony
trioxide in polymeric materials and red
phosphorus as a flame retardant, and
<2% antimony in solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
°C/W
Nominal Operating Parameters
Specification
Parameter
Unit
Min
Typ
Condition
Max
Recommended Operating
Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
-4.5
Drain Bias Current
Frequency of Operation
28
V
-1.11
V
50
mA
2500
MHz
48
V
-1.12
V
Recommended Operating
Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
Drain Bias Current
-4.5
50
mA
2500
MHz
CRSS
TBD
pF
CISS
TBD
pF
COSS
TBD
pF
IG (OFF) - Gate Leakage
0.05
mA
VG = -4V, VD = 0V
ID (OFF) - Drain Leakage
0.01
mA
VG = -4V, VD = 18V
VGS (TH) - Threshold Voltage
0.95
V
VD = 48V, ID = 2.2mA
IG (stress) – Gate Leakage at high Drain
Voltage
0.1
mA
VG = -4V, VD = 150V
Frequency of Operation
Capacitance
VG = -4V, VD = 0V
DC Functional Test
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131206
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RFHA3960
PRELIMINARY
Specification
Parameter
Unit
Min
Typ
Condition
Max
RF Functional Test
Test Conditions: VDSQ = 28V, IDQ = 50mA,
T = 25°C, Performance in a standard tuned test fixture
VGS (Q)
-1.1
V
VDSQ = 28V, IDQ = 50mA
Linear Gain
16
dB
CW,PIN = 0dBm, f = 2500MHz
Power Gain
13
dB
CW,PIN = 22dBm, f = 2500MHz
Drain Efficiency
TBD
%
PAE
TBD
%
Input Return Loss
-12
dB
ACP
TBD
dBc
RF Typical Performance
Small Signal Gain
Test Conditions: CW operation, VDSQ = 28V, IDQ = 50mA,
T = 25°C, Performance in a standard tuned test fixture
16
dB
CW, f = 2500MHz
35
dBm
CW, f = 2500MHz
Drain Efficiency at P3dB
57
%
CW, f = 2500MHz
PAE
54
%
CW, f = 2500MHz
Input Return Loss
-17
dB
CW, f = 2500MHz
IMD3
-40
dBc
2-Tone, fc = 2500MHz,1MHz Tone spacing, VDSQ = 28V, IDQ = 50mA
Output Power at P3dB
Test Conditions: CW operation, VDSQ = 48V, IDQ = 50mA,
T = 25°C, Performance in a standard tuned test fixture
RF Typical Performance
Small Signal Gain
15.5
dB
CW, f = 2500MHz
38
dBm
CW, f = 2500MHz
Drain Efficiency at P3dB
50
%
CW, f = 2500MHz
PAE
47
%
CW, f = 2500MHz
Input Return Loss
-23
dB
CW, f = 2500MHz
IMD3
-45
dBc
2-Tone, fc = 2500MHz,1MHz Tone spacing, VDSQ = 48V, IDQ = 80mA
Output Power at P3dB
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131206
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RFHA3960
PRELIMINARY
Typical Performance in standard 2.5GHz fixed tuned test fixture, (CW, T = 25°C, unless noted)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131206
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
4 of 12
RFHA3960
PRELIMINARY
Typical Performance in standard 2.5GHz fixed tuned test fixture, (CW, T = 25°C, unless noted)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131206
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
5 of 12
RFHA3960
PRELIMINARY
Typical Performance in standard 2.5GHz fixed tuned test fixture, (2-Tone, T = 25°C, unless noted)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131206
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
6 of 12
RFHA3960
PRELIMINARY
Typical Performance in standard 2.5GHz fixed tuned test fixture, (2-Tone, T = 25°C, unless noted)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131206
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
7 of 12
RFHA3960
PRELIMINARY
Evaluation Board Schematic 2500MHz Application Circuit
1
Evaluation Board Bill of Materials (BoM) 2500MHz Application Circuit
Description
Reference Designator
Manufacturer
Manufacturer's P/N
CAP, 12pF, 10%, 50V, X7R,
C1,C2,C7,C8
ATC
800A120JT
CAP, 4.7uF, 10%, 50V, X7R,
C3,C4
Murata Electronics
GRM55ER72A475KA01L
CAP, 0.1uF, 10%, 50V, X7R,
C5,C6
Murata Electronics
GRM155R71H102KA01D
CAP, 3.3pF, 10%, 50V, X7R,
C9,C10
ATC
800A3R3BT
CAP, 1.0pF, 10%, 50V, X7R,
C11
ATC
800A1R0BT
CAP, 1.5pF, 10%, 50V, X7R,
C12
ATC
800A1R5BT
RES,10 ohm
R1
Panasonic
1206
RES,0 ohm
R2
Panasonic.
0603
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131206
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RFHA3960
PRELIMINARY
Evaluation Board Assembly Drawing
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131206
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RFHA3960
PRELIMINARY
Package Outline and Branding Drawing (Dimensions in millimeters)
1
5
2
6
3
7
4
8
9
Pin Names and Descriptions
Pin
Name
Description
1
N/C
2
Gate/RFIN
Gate VG-RF Input
3
Gate/RFIN
Gate VG-RF Input
4
N/C
No internal connection.
5
N/C
No internal connection.
6
Drain/RFOUT
Drain VD-RF Output
7
Drain/RFOUT
Drain VD-RF Output
8
N/C
9
Source
No internal connection.
No internal connection.
Source-Ground Base
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131206
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RFHA3960
PRELIMINARY
Bias Instruction for RFHA3960 Evaluation Board



ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.
Evaluation board requires additional external fan cooling.
Connect all supplies before powering up the evaluation board.
1.
2.
Connect RF cables at RFIN and RFOUT.
Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
Apply -8V to VGate.
Apply 28/48V to VDrain.
Increase VG until drain current reaches desired 50mA bias point.
Turn on RF input.
3.
4.
5.
6.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131206
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RFHA3960
PRELIMINARY
Device Handling/Environmental Conditions
RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity,
high temperature environment.
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards.
GaN HEMT Capacitances
The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These
capacitances exist across all three terminals of the device. The physical manufactured characteristics of the device determine the
value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal
voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (V GS = -8V) and zero volts
applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is
removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitance
values presented in the typical characteristics table of the device represent the measured input (C ISS), output (COSS), and reverse
(CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows:
CISS = CGD + CGS
COSS = CGD + CDS
CRSS = CGD
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts V GS the drain of the device is
saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the
source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum
limits. RFMD recommends applying VGS = -5V before applying any VDS.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be
adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (I DQ)
shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering
manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on
performance trade-offs.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is
measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the
package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat-sink but
sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the
measurement, the thermal resistance is calculated.
In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the
maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from
ambient to the back of the package including heat-sinking systems and air flow mechanisms. Incorporating the dissipated DC
power, it is possible to calculate the junction temperature of the device.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131206
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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