RFCM3326 45-1218MHZ GAAS/GAN POWER DOUBLER MODULE The RFCM3326 is a Power Doubler amplifier SMD Module. The part employs GaAs pHEMT die and GaN HEMT die, has high output capability, and is operated from 45MHz to 1218MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. DC current of the device can be externally adjusted for optimum distortion performance versus power consumption over a wide range of output level. Current Setting Temperature Sensing Features Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability Low Noise Unconditionally Stable Under all V+ INPUT Package: 9 pin, 9.0 mm x 8.0 mm x 1.375mm OUTPUT Terminations Extremely High Output Capability 24.5dB Min. Gain at 1218MHz 450mA Max. at 24VDC Temperature Sensing Feature Applications 45MHz to 1218MHz CATV Amplifier Systems RFCM3326 Functional Block Diagram Ordering Information RFCM3326SB Sample bag with 5 pieces RFCM3326SQ Sample bag with 25 pieces RFCM3326SR 7” Reel with 100 pieces RFCM3326TR7 7” Reel with 500 pieces RFCM3326TR13 13” Reel with 1000 pieces RFCM3326PCBA-410 Fully Assembled Evaluation Board RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. ® DS141006 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 8 RFCM3326 Absolute Maximum Ratings Parameter RF Input Voltage (single tone; on evaluation board) DC Supply Over-Voltage (5 minutes) Rating Unit 75 dBmV 30 V Storage Temperature -40 to +100 °C Operating Mounting Base Temperature -30 to +110 °C MSL 3 @260 °C Moisture Sensitivity Level IPC/JEDEC J-STD-20 Caution! ESD sensitive device. RoHS status based on EU Directive 2011/65/EU Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Specification Parameter Unit Min Typ V+= 24V; TMB=30°C; ZS=ZL=75Ω; IDC=IDC typical General Performance Power Gain Slope[1] 23.0 23.5 24.0 dB f=45MHz 24.5 25.0 26.0 dB f=1218MHz 1.0 1.5 2.5 dB f=45MHz to 1218MHz 1 dB f=45MHz to 1218MHz (Peak to Valley) Flatness of Frequency Response Input Return Loss Output Return Loss Condition Max 20 dB f=45MHz to 320MHz 19 dB f=320MHz to 640MHz 18 dB f=640MHz to 870MHz 16 dB f=870MHz to 1000MHz 15 dB f=1000MHz to 1218MHz 20 dB f=45MHz to 320MHz 19 dB f=320MHz to 640MHz 18 dB f=640MHz to 870MHz 17 dB f=870MHz to 1000MHz dB f=1000MHz to 1218MHz Noise Figure 16 3.0 4.0 dB f=50MHz to 1218MHz Total Current Consumption (DC) 430 450 mA RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS141006 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 8 RFCM3326 Specification Parameter Unit Min Typ V+= 24V; TMB=30°C; ZS=ZL=75Ω; IDC=IDC typical Distortion data 40MHz to 550MHz CTB -73 -68 dBc XMOD -65 -60 dBc CSO -76 -70 dBc CIN Condition Max 55 60 VO=61dBmV at 1000MHz, 18dB extrapolated tilt, 79 analog channels plus 75 digital channels (-6dB offset)[2][4] dB V+= 24V; TMB=30°C; ZS=ZL=75Ω; IDC=IDC typical Distortion data 40MHz to 550MHz CTB -80 dBc XMOD -78 dBc CSO -80 dBc CIN 59 dB VO=60dBmV at 1218MHz, 22dB extrapolated tilt, 79 analog channels plus 111 digital channels (-6dB offset)[3][4] 1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +52.4dBmV tilted output level, plus 75 digital channels, -6dB offset relative to the equivalent analog carrier. 3. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +38dBmV to +47.4dBmV tilted output level, plus 111 digital channels, -6dB offset relative to the equivalent analog carrier. 4. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise). RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS141006 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 8 RFCM3326 RFCM3326 Current Adjustment The RFCM3326 can be operated over a wide range of current to provide maximum required performance with minimum current consumption. Changing the value of resistor R3 on application circuit allows a variation of the current between 430mA and 330mA (typ.). Within the recommended range of current between 430mA and 370mA gain (S21) change is less than 0.2dB and noise figure change is less than 0.1dB. Current versus Resistor R3 (typical values) I [mA] 440 420 Device Current [mA], typical 400 R3 [Ω] V+= 24V; TMB=30°C; ZS=ZL=75Ω 380 360 340 320 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 R3 [Ω] 430 1500 410 1400 390 1300 370 1240 350 1150 330 1050 Device Current versus Distortion Degradation (typical values) I [mA] 440 420 400 380 CTB CIN 360 340 320 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 CTB and CIN degradation [dB] Test condition: V+= 24V; TMB=30°C; ZS=ZL=75Ω; VO=61dBmV at 1000MHz, 18dB extrapolated tilt, 79 analog channels plus 75 digital channels (-6dB offset) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS141006 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 8 RFCM3326 RFCM3326 Temperature Sensing Feature The RFCM3326 provides an internal NTC resistor for temperature sensing. This resistor is located right next to the output transistor stage. Within the application circuit the NTC is built in a voltage divider. The output voltage of the voltage divider (Vt) can be correlated to the module backside temperature. Module Backside Temperature versus Vt (typical values) Temperature [°C] 120 110 100 90 80 70 60 50 40 30 20 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 Vt [mV] RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS141006 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 8 RFCM3326 Evaluation Board Schematic FB1 Bead 60Ω V+ C1 220pF R1 5.1kΩ D1 TGL34-33A R13 3.3kΩ Vt R2 3kΩ C13 4.7nF D2 MM3Z5V6T1 GND R3 1.5kΩ C3 4.7nF T1 RFXF0006 C2 4.7nF R4 7.5Ω C4 1.2pF R5 1kΩ RF IN C6 4.7nF C9 DNI R7 DNI R8 DNI 9 1 C10 0.3pF R6 1kΩ 8 2 3 U1 RFCM3326 7 C8 4.7nF T2 RFXF0008 T3 RFXF0009 C7 4.7nF RF OUT 6 4 C5 1.2pF R9 DNI 5 C11 0.5pF R10 DNI C12 DNI R11 DNI R12 DNI Evaluation Board Assembly Drawing Note: The ground plane of the RFCM3326 module should be soldered onto a board equipped with as many thermal vias as possible. Underneath this thermal via array a heat sink with thermal grease needs to be placed which is able to dissipate the complete module DC power (up to 10.4 Watts). In any case the module backside temperature should not exceed 110°C. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS141006 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 8 RFCM3326 Evaluation Board Bill of Materials (BOM) Component Type Value Qty Designator Comment PCB Evaluation-Board PI816A 1 Capacitor 220pF 1 C1 Capacitor 4.7nF 6 C2, C3, C6, C7, C8, C13 Capacitor 1.2pF 2 C4, C5 Capacitor DNI 4 C9, C12 Optional to improve matching in application Capacitor 0.3pF 1 C10 Optional to improve matching in application Capacitor 0.5pF 1 C11 Optional to improve matching in application Resistor 5.1kΩ 1 R1 Resistor 3kΩ 1 R2 Resistor 1.5kΩ 1 R3 Resistor 7.5Ω 1 R4 Resistor 1kΩ 2 R5, R6 Resistor DNI 6 R7-R12 Resistor 3.3kΩ 1 R13 Impedance Bead 60Ω @ 100MHz 1 FB1 Transient Voltage Suppressor Diode TGL34-33A 1 D1 Zener Diode MM3Z5V6T1G 1 D2 Transformer RFXF0006 1 T1 Transformer RFXF0008 1 T2 Transformer RFXF0009 1 T3 DUT RFCM3326 1 U1 Optional to improve matching in application Pin Out RF IN + 1 GND 2 GND 3 RF IN - 4 GND 9 RF OUT + 8 Rt 7 V+ 6 GND 5 RF OUT - RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS141006 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 8 RFCM3326 Pin Names and Descriptions Pin Name Description 1 RF IN + RF AMP Positive Input 2, 3, 6 GND Ground pins 4 RF IN - RF AMP Negative Input 5 RF OUT - RF AMP Negative Output 7 V+ Supply Voltage, +24V 8 Rt NTC Output for Temperature Sensing 9 RF OUT + RF AMP Positive Output Package Outline and Branding Drawing (Dimensions in millimeters) 9.000±0.100 3.700 PIN 1 Indicator RFCM3326 YYWW Trace Code DATA CODE (YEAR/WEEK) 8.000±0.100 A 1.000 A A A A 0.650 0.000 0.650 A 2x 2.000 A 1.000 A A Pin1 2x 2.000 0.275 Ref molding cap A= 0.600 x 0.600 mm 3.400 4x 4.100 0.000 5x 4.100 3.400 1.375±0.075 3.700 substrate RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS141006 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 8