RFPD2930 RFPD2930 GaAs/GaN Power Doubler Hybrid 45MHz to 1003MHz Package: SOT-115J The RFPD2930 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT die and GaN HEMT die, has extremely high output capability, and is operated from 45MHz to 1003MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. DC current of the device can be externally adjusted for optimum distortion performance versus power consumption over a wide range of output level. Current setting V+ OUTPUT INPUT Features ■ Excellent Linearity ■ Superior Return Loss Performance ■ Extremely Low Distortion ■ Optimal Reliability ■ Low Noise ■ Unconditionally Stable Under All Terminations ■ Extremely High Output Capability ■ 24.5dB Min. Gain at 1003MHz ■ 450mA Max. at 24VDC ■ Extra Pin For Current Adjustment Applications ■ 45MHz to 1003MHz CATV Amplifier Systems Ordering Information RFPD2930 Box with 50 Pieces Absolute Maximum Ratings Parameter RF Input Voltage (single tone) DC Supply Over-Voltage (5 minutes) Rating Unit 75 dBmV 30 V Storage Temperature -40 to +100 °C Operating Mounting Base Temperature -30 to +100 °C Caution! ESD sensitive device. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2011/65/EU. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. ® DS141021 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 6 RFPD2930 Nominal Operating Parameters Specification Parameter Unit Min Typ Condition Max V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω, IDC set > 370mA General Performance 23.3 23.8 24.3 dB f = 45MHz 24.5 25.0 26.0 dB f = 1003MHz 0.5 1.0 2.0 dB f = 45MHz to 1003MHz 0.8 dB f = 45MHz to 1003MHz 20 dB f = 45MHz to 320MHz 19 dB f = 320MHz to 640MHz 18 dB f = 640MHz to 870MHz 16 dB f = 870MHz to 1003MHz 20 dB f = 45MHz to 320MHz 19 dB f = 320MHz to 640MHz 18 dB f = 640MHz to 870MHz 17 dB f = 870MHz to 1003MHz Power Gain [1] Slope Flatness of Frequency Response Input Return Loss Output Return Loss Noise Figure Total Current Consumption (DC) 3.0 4.0 dB f = 50MHz to 1003MHz 430.0 450.0 mA [5] V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω, IDC = IDC typical Distortion Data CTB -73 -68 dBc XMOD -65 -60 dBc CSO -76 -70 dBc CIN 55 60 [2] VO = 61.0dBmV at 1000MHz, 18dB extrapolated tilt, 79 analog channels plus 75 digital channels (-6dB offset)[2][5] dB V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω, IDC = IDC typical Distortion Data CTB -77 dBc XMOD -71 dBc CSO -71 dBc CIN 66 dB [2] VO = 56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79 analog channels plus 75 digital channels (-6dB offset)[3][5] Distortion Data V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω, IDC = 370mA CTB -70 dBc XMOD -65 dBc CSO -71 dBc CIN 61 dB VO = 56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79 analog channels plus 75 digital channels (-6dB offset)[3][5] RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS141021 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 6 RFPD2930 1. 2. 3. 4. 5. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +52.4dBmV tilted output level, plus 75 digital channels, -6dB offset relative to the equivalent analog carrier. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +50.0dBmV tilted output level, plus 75 digital channels, -6dB offset relative to the equivalent analog carrier. Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test Procedure for carrier to noise). Test condition: Pin 4 not connected RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS141021 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 6 RFPD2930 Current Adjustment Using Hybrid Pin 4 The RFPD2930 can be operated over a wide range of current to provide maximum required performance with minimum current consumption. A single external resistor connected between pin 4 and GND allows variation of current between 430mA and 220mA (typ.). Within the recommended range of current between 430mA and 370mA gain (S21) change is less than 0.2dB and noise figure change is less than 0.1dB. If pin 4 is not connected the devices operates at maximum current, see table below. Examples of connecting pin 4: Device current [mA], typical External resistor [Ω] 430 >50k (open) 420 18k 400 6k8 370 3k 340 1k8 320 1k 220 0 (short) V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS141021 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 6 RFPD2930 Change of Distortion Performance Over Current Test Condition: V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω; 79 ch. 7dB tilted; VO = 50dBmV at 550MHz, plus 75 digital channels (-6dB offset) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS141021 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 6 RFPD2930 Package Drawing (Dimensions in millimeters) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS141021 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 6