OPB855 Datasheet - OPTEK Technology

Slotted Optical Switch
OPB855
Features:
•
•
•
•
•
Low profile 0.27” (6.86 mm) overall height
Printed PCBoard mounting
0.205” (5.21 mm) wide and 0.220 (5.59 mm) deep slot
0.380” (9.65 mm) lead spacing
Opaque plastic housing
Product Photo Here
Description:
The OPB855 slotted optical switch consists of an infrared emitting diode and a NPN silicon phototransistor,
mounted on opposite sides of a 0.205” (5.21 mm) wide slot in an inexpensive plastic housing. Switching of the
phototransistor occurs whenever an opaque object passes through the slot.
Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for
more information.
Applications:
• Non-contact interruptive object sensing
• Assembly line automation
• Machine automation
• Equipment security
• Machine safety
RoHS
Ordering Information
Part Number
Description
OPB855
Pin #
Description
1
Anode
2
Cathode
3
Collector
4
Emitter
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 [email protected] www.optekinc.com
Issue A .2 3/09
Page 1 of 3
Slotted Optical Switch
OPB855
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Storage & Operating Temperature Range
-40°C to +85° C
Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron]
(1)
260° C
Input Diode (See OP140 for additional information)
Forward DC Current
50 mA
Peak Forward Current (1 μs pulse width, 300 pps)
1A
Reverse DC Voltage
2V
Power Dissipation
(2)
100 mW
Output Phototransistor (See OP550 for additional information)
Collector-Emitter Voltage
30 V
Emitter-Collector Voltage
5V
Collector DC Current
Power Dissipation
30 mA
(2)
100 mW
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Input Diode
VF
Forward Voltage
-
1.30
1.80
V
IF = 20 mA
IR
Reverse Current
-
-
100
µA
VR = 2 V
Output Phototransistor
V(BR)CEO
Collector-Emitter Breakdown Voltage
30
-
-
V
IC = 1 mA
V(BR)ECO
Emitter-Collector Breakdown Voltage
5
-
-
V
IE = 100 µA
Collector-Emitter Dark Current
-
-
100
nA
VCE = 10 V, IF = 0, EE = 0
Collector-Emitter Saturation Voltage
-
-
0.4
V
IC = 400 µA, IF = 20 mA
1.50
-
20.0
mA
ICEO
Combined
VCE(SAT)
IC(ON)
On-State Collector Current
VCE = 5 V, IF = 20 mA
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(2) Derate linearly 1.67 mW/°C above 25 ° C.
(3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and
ketones.
(4) All parameters tested using pulse technique.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue A .2 3/09
Page 2 of 3
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 [email protected] www.optekinc.com
Slotted Optical Switch
OPB855
OPB855 - Flag in Middle of Slot
Typical IC(on) Response %
120%
100%
80%
60%
40%
Right to Left
Left to Right
20%
Top to Bottom
0%
-0.125
-0.075
-0.025
0
0.025
0.075
0.125
Displacement Distance (inches)
Test Schematic
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 [email protected] www.optekinc.com
Issue A .2 3/09
Page 3 of 3