SFS1826 – SFS1829 - Solid State Devices, Inc.

SFS1826 – SFS1829
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Designer’s Data Sheet
1.6 AMP
Part Number/Ordering Information 1/
SFS182 ___ ___ ___
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
Package
/18 = TO-18
Voltage/Family
6 = 200V
7 = 250V
8 = 300V
9 = 400V
SILICON CONTROLLED RECTIFIER
200 - 400 Volts
FEATURES:
 Low-Level Gate Characteristics
 Low Holding Current IH = 5 mA (Max) @ 25oC
 Anode Common to Case
 Hermetically Sealed
 TX, TXV, S-Level Screening Available – Consult Factory
MAXIMUM RATINGS3/
Symbol
Value
Units
VDRM
VRRM
200
250
300
400
Volts
VRSM
300
350
400
500
Volts
IT (RMS)
1.6
Amps
IT(AV)
1.0
0.7
Amps
ITSM
15
Amps
PGM
0.1
Watts
PG(AV)
0.01
Watts
Peak Gate Current
IGM
0.1
Amps
Peak Gate Voltage
VGM
6.0
Volts
TJ
-65 to +200
°C
Storage Temperature Range
Tstg
-65 to +200
°C
Thermal Resistance, Junction to Case
RθJC
72
°C/W
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
SFS1826
SFS1827
SFS1828
SFS1829
Non-Repetitive Peak Reverse Blocking Voltage
(t < 5.0 ms)
SFS1826
SFS1827
SFS1828
SFS1829
RMS On-State Current
(All Conduction Angles)
Average On-State Current
Peak Non-Repetitive Surge Current
(One Cycle, 60 Hz, TC = 80°C)
Peak Gate Power
Average Gate Power
Operating Junction Temperature Range
TC = 50°C
TA = 25°C
NOTES:
TO-18 (/18)
1/
2/
3/
4/
5/
For ordering information, price, operating curves, and availability- Contact factory.
Screening based on MIL-PRF-19500. Screening flows available on request.
Unless otherwise specified, all electrical characteristics @25°C, RGK = 1K Ω.
RGK current is not included in measurement.
Thyristor devices shall not be tested with a constant current source for forward and reverse blocking
capability such that the voltage applies exceeds the rated blocking voltage.
6/ Thyristor devices shall not have a positive bias applied to the gate concurrently with a negative potential
applied to the anode.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SCR005B
DOC
Solid State Devices, Inc.
SFS1826 – SFS1829
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS3/
Peak Reverse Blocking Current
Rated VRRM
Peak Forward Blocking Current
Rated VDRM, RGK = 1KΩ
Peak On-State Voltage
IF = 1.6 A Peak
Gate Trigger Current
VD = 6 VDC, RL = 100 Ω, TC = -65oC
Gate Trigger Voltage
VD = 6 VDC, RL = 100 Ω , TC = 25oC
VD = 6 VDC, RL = 100 Ω, TC = -65oC
Holding Current
VD = 6 VDC
VD = 6 VDC, TC = -65oC
Symbol
Min
Max
Unit
IRRM
––
1
μA
IDRM
––
1
μA
VTM
––
1.3
Volts
IGT
––
350
μA
VGT
––
––
0.7
0.9
Volts
IH
––
––
5
2.0
mA
Case Outline: TO-18
PIN 1: ANODE
PIN 2: CATHODE
PIN 3: GATE
Available Part Numbers:
SFS1826/18; SFS1827/18;
SFS1828/18; SFS1829/18
NOTES:
1/
2/
3/
4/
5/
For ordering information, price, operating curves, and availability- Contact factory.
Screening based on MIL-PRF-19500. Screening flows available on request.
Unless otherwise specified, all electrical characteristics @25°C, RGK = 1K Ω.
RGK current is not included in measurement.
Thyristor devices shall not be tested with a constant current source for forward and reverse blocking capability such that the
voltage applies exceeds the rated blocking voltage.
6/ Thyristor devices shall not have a positive bias applied to the gate concurrently with a negative potential applied to the anode.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SCR005B
DOC