SFF6661/39 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 0.86 AMP N-CHANNEL MOSFET DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF6661 /39 ___ │ │ │ │ │ └ └ 90 Volts, 4Ω Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Package /39 = TO-39 Features: Rugged construction Low RDS(on) and high transconductance Fast recovery and superior dv/dt performance Increased reverse energy capability Low input and transfer capacitance for easy paralleling Hermetically sealed package Very fast switching speed TX, TXV, S-Level screening available2/ Replacement for 2N6661 Maximum Ratings3/ Symbol Value Units Drain - Source Voltage VDS 90 V Gate - Source Voltage VGS ±20 V ID 0.86 0.54 A IDM 3 A PD 6.25 0.725 W TOP & TSTG -65 to +150 °C RθJA RθJC 170 20 °C /W Max. Continuous Drain Current (TJ = 150°C) TC = 25°C TC = 100°C Max. Instantaneous Drain Current (Tj limited) Total Power Dissipation TC = 25°C TA = 25°C Operating & Storage Temperature Maximum Thermal Resistance (Junction to Ambient) (Junction to Case) NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all electrical characteristics @25°C. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0041B TO-39 DOC SFF6661/39 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics3/ Symbol Min Typ Max Units VDS = 0V, ID = 1.0μA BVDSS 90 125 –– V VDS = VGS, ID = 1.0mA VDS = VGS, ID = 1.0mA, TA= -55°C VDS = VGS, ID = 1.0mA, TA= 125°C VGS(th) 0.8 –– 0.3 1.6 1.8 1.3 2 2.5 –– V VDS = 0V, VGS = ±20V VDS = 0V, VGS = ±20V, TA = 125°C IGSS –– –– –– –– ±100 ±500 nA VDS = 72V, VGS = 0V VDS = 72V, VGS = 0V, TA = 125°C IDSS –– –– –– –– 1 100 μA VDS = 10V, VGS = 10V ID(on) –– 1.8 –– mA RDS(on) –– –– –– 3.8 3.6 6.7 5.3 4 7.5 Ω VDS = 7.5V, ID = 0.475A gfs 170 340 –– mS IS = 0.86A, VGS = 0V VSD 0.7 0.9 1.4 V VGS = 0V VDS = 25V f = 1 MHz Ciss Coss Crss Cds –– –– –– –– 35 15 2 30 50 40 10 –– pF VDD = 25V, RL = 23Ω ID = 1A VGEN = 10V, RG = 23Ω t (on) t (off) –– –– 6 8 10 10 nsec Drain to Source Breakdown Voltage Gate Threshold Voltage Gate to Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Drain to Source On State Resistance* Forward Transconductance* VGS = 5V, ID = 0.3A VGS = 10V, ID = 1A VGS = 10V, ID = 1A, TA=125°C Diode Forward Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain-Source Capacitance Turn-On Time Turn-Off Time CASE OUTLINE: TO-39 (/39) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. PIN ASSIGNMENT (Standard) Package Drain Source Gate Pin 3 Pin 1 Pin 2 TO-39(/39) DATA SHEET #: FT0041B DOC