SSDI SFF6661-39

SFF6661/39
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
0.86 AMP
N-CHANNEL MOSFET
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFF6661
/39 ___
│
│
│
│
│
└
└
90 Volts, 4Ω
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package
/39 = TO-39
Features:









Rugged construction
Low RDS(on) and high transconductance
Fast recovery and superior dv/dt performance
Increased reverse energy capability
Low input and transfer capacitance for easy
paralleling
Hermetically sealed package
Very fast switching speed
TX, TXV, S-Level screening available2/
Replacement for 2N6661
Maximum Ratings3/
Symbol
Value
Units
Drain - Source Voltage
VDS
90
V
Gate - Source Voltage
VGS
±20
V
ID
0.86
0.54
A
IDM
3
A
PD
6.25
0.725
W
TOP & TSTG
-65 to +150
°C
RθJA
RθJC
170
20
°C /W
Max. Continuous Drain Current
(TJ = 150°C)
TC = 25°C
TC = 100°C
Max. Instantaneous Drain Current (Tj limited)
Total Power Dissipation
TC = 25°C
TA = 25°C
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Ambient)
(Junction to Case)
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25°C.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0041B
TO-39
DOC
SFF6661/39
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Electrical Characteristics3/
Symbol
Min
Typ
Max
Units
VDS = 0V, ID = 1.0μA
BVDSS
90
125
––
V
VDS = VGS, ID = 1.0mA
VDS = VGS, ID = 1.0mA, TA= -55°C
VDS = VGS, ID = 1.0mA, TA= 125°C
VGS(th)
0.8
––
0.3
1.6
1.8
1.3
2
2.5
––
V
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V, TA = 125°C
IGSS
––
––
––
––
±100
±500
nA
VDS = 72V, VGS = 0V
VDS = 72V, VGS = 0V, TA = 125°C
IDSS
––
––
––
––
1
100
μA
VDS = 10V, VGS = 10V
ID(on)
––
1.8
––
mA
RDS(on)
––
––
––
3.8
3.6
6.7
5.3
4
7.5
Ω
VDS = 7.5V, ID = 0.475A
gfs
170
340
––
mS
IS = 0.86A, VGS = 0V
VSD
0.7
0.9
1.4
V
VGS = 0V
VDS = 25V
f = 1 MHz
Ciss
Coss
Crss
Cds
––
––
––
––
35
15
2
30
50
40
10
––
pF
VDD = 25V, RL = 23Ω
ID = 1A VGEN = 10V, RG = 23Ω
t (on)
t (off)
––
––
6
8
10
10
nsec
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Gate to Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current*
Drain to Source On State Resistance*
Forward Transconductance*
VGS = 5V, ID = 0.3A
VGS = 10V, ID = 1A
VGS = 10V, ID = 1A, TA=125°C
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-Source Capacitance
Turn-On Time
Turn-Off Time
CASE OUTLINE: TO-39 (/39)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
PIN ASSIGNMENT (Standard)
Package
Drain Source Gate
Pin 3
Pin 1
Pin 2
TO-39(/39)
DATA SHEET #: FT0041B
DOC