SSDI SSG200EF60E

SSG200EF60E
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
200 AMP
N-CHANNEL IGBT
WITH ANTI-PARALLEL DIODE
DESIGNER’S DATA SHEET
Part Number/Ordering Information 1/
SSG200EF60E
___
└
Screening
600 VOLTS
2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
Features:
•
•
•
•
•
•
•
Outstanding current capability
Low on-state conductive losses
Very simple gate drive design
Improved SOA characterization
Low input capacitance
High reverse voltage rating available
TX, TXV, S-Level screening available
MAXIMUM RATINGS3/
SYMBOL
VALUE
UNIT
Collector – Emitter Breakdown Voltage
VCES
600
V
Gate – Emitter Voltage
VGES
±20
V
IC1
IC2
200
100
A
ICM
300
A
ILM
100
A
EARV
5.6
mJ
T OP & TSTG
-55 to +150
ºC
Maximum Thermal Resistance (Junction to Case)
R0JC
0.20
ºC/W
Total Device Dissipation @ TC = 25ºC
Dissipation Derating From @ TC = 25ºC to TC = 150ºC
PD1
PD2
625
5
W
W/ºC
@ TC = 25ºC
@ TC = 90ºC
Max. Continuous Collector Current
Pulsed Collector Current4/
Clamped Inductive Load Current (TJ = 125ºC)5/
Reverse Voltage Avalanche Energy (IC = 100A)
4/
Operating & Storage Temperature
Milpack 3
NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
o
3/ Unless otherwise specified, all electrical characteristics @25 C.
4/ Pulse duration limited by TJmax; repetitive rating.
5/ VCC=80% rated BVCES, VGE=15V, L=30uH, RG=10Ω.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: G00003B
DOC
SSG200EF60E
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
3/
ELECTRICAL CHARACTERISTICS
SYMBOL
MIN
TYP
MAX
UNIT
BVCES
600
––
––
V
VGE(th)
2.5
5.5
6
V
VCE(sat)
––
––
1.65
1.8
2.0
2.4
V
Gate - Emitter Leakage Current
(VGE = ±20V, VCE = 0V)
IGES
––
0.01
1.0
μA
Collector Leakage Current
o
(VCE = 480 V, VGE = 0V, Tj = 25 C)
o
(VCE = 600 V, VGE = 0V, Tj = 25 C)
o
(VCE = 480 V, VGE = 0V, Tj = 125 C)
ICES1
ICES2
ICES3
––
––
––
10
40
4
––
200
10
μA
μA
mA
gfs
40
––
––
S
VGE = 15V
IC = 10A
VCE = 300V
Qg(on)
Qge
Qgc
––
––
––
575
70
320
650
150
370
Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Cies
Coes
Cres
––
––
––
8400 15,000
1400 2,000
600 1,000
Inductive Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGE = 15V
IC = 45A
RG = 10Ω
L = 100µH
td(on)
tr
td(off)
tf
––
––
––
––
150
140
600
300
500
175
1000
500
Peak Current
Ipk
––
––
200
A
Peak Inverse Voltage
PIV
––
––
600
V
Collector - Emitter Breakdown Voltage
(ICES = 250μA, VGE = 0V)
Gate - Emitter Threshold Voltage
(IC = 5mA, VCE = VGE)
o
IC = 100A @ 25 C
o
IC = 100A @ 100 C
Collector - Emitter Saturation Voltage
Forward Transconductance
(IC = IC2, VCE = 10V)
Gate Charge
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
nC
pF
nsec
ANTI-PARALLEL DIODE
Average Current
Iavg
––
––
100
A
Diode Forward Voltage @ IF=100A, TJ=25 C
VF
––
1.1
1.5
V
Reverse Recovery Time (If=40A, di/dt=200A/µsec)
trr
––
200
400
nsec
o
PACKAGE OUTLINE: MILPACK3
PIN OUT:
PIN 1: COLLECTOR
PIN 2: EMITTER
PIN 3: GATE
PIN 4: EMITTER
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: G00003B
DOC