SPMQ496-01 - Solid State Devices, Inc.

PRELIMINARY
SPMQ496-01
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET
FEATURES:
• High Current Switching for Motor Drives and Inverters for
Space Applications.
• Push-Pull Configuration with Freewheeling Diodes.
• Low Saturation Voltage at High Currents.
• Low Mechanical Stress Design.
• Hermetic Sealed Construction for Aerospace Applications.
• Excellent Thermal Management.
• Full Power Screened Hermetic Discretes.
• TX, TXV, and S-Level Screening Available.
• Consult Factory for:
• Faster Switching Speeds;
• Other Bridge Configurations and Terminal Styles.
400 AMP/600 VOLTS
IGBT POWER MODULE
FOR SPACE APPLICATIONS
ASPM
MAXIMUM RATINGS
CHARACTERISTIC
Collector to Emiter Voltage
Gate to Collector Voltage
Continuous Collector Current
TB = 25 C
TB = 90oC
o
Pulse Collector Current 1/
Clamped Inductive Load Current
(TB = 125 EC, VCC = 480V, VGE = 15V, L = 30uH, RG = 10S
Reverse Voltage Avalange Energy 1/ (IC = 200A)
Operating and Storage Temperature
Thermal Resistance, Junction to Base
Total Module Dissipation @TB = 25oC
Dissipation Derating from TB = 25oC to TB = 150oC
1/
SYMBOL
VALUE
UNIT
VCES
600
Volts
VGES
"20
Volts
I C1
I C2
I CM
400
200
600
Amps
I LM
200
Amps
EARV
5.6
mJ
TOP & TSTG
-55 TO +150
1 JB
PD1
PD2
0.14
1250
10
Pulse Duration Limited by TJMAX; Repetative Rating
ELECTRICAL SCHEMATIC
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: PM0010A
Amps
o
C
C/W
W
W/oC
o
PRELIMINARY
SPMQ496-01
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified)
RATING
Collector - Emitter Breakdown Voltage
(ICES = 250:A, VGE = 0V)
Gate - Emitter Threshold Voltage
(IC = 5mA, VCE = VGE)
Collector-Emitter Saturation Voltage
(IC = 200A, VGE = 15V)
Gate-Emitter Leakage Current
(VGE = "20V, VCE = 0V)
Collector Leakage Current
(VCE = 480V, VGE = 0V)
Anti-Parallel Diode Forward Voltage
(IF = 200A, TB = 25oC)
(TB = 25oC)
(TB = 90oC)
(TB = 25oC)
(TB = 125oC)
Insulation Resistance (All terminals to Base @1500V)
PACKAGE OUTLINE: ASPM
Tolerances
(Unless specified):
.XX ".03
.XXX ".010
SYMBOL
MIN
MAX
UNIT
BVCES
600
-
Volts
VGE(th)
2.0
6
Volts
VCE(sat)2
VCE(sat)1
-
3.1
2.5
Volts
IGES
-
2.0
:Amps
ICES1
ICES1
-
225
20
:Amps
mAmps
VF
-
1.6
Volts
RINSUL1
1
-
GS