SFF15N80/3 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 15 AMPS 800 VOLTS 0.60 S N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET FEATURES: • Low RDS (on) and High Transconductance • Excellent High Temperature Stability • Fast Switching Speed • Intrinsic Rectifier • Hermetically Sealed Package • TX, TXV, and Space Level Screening Available TO-3 MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Drain to Source Voltage VDSS 800 Volts Gate to Source Voltage VGS ±20 Volts ID 15 Amps Operating and Storage Temperature Top & Tstg -55 to +150 Thermal Resistance, Junction to Case R2JC 0.42 PD 300 Continuous Drain Current Total Device Dissipation @ TC = 25oC PACKAGE OUTLINE: TO-3 PIN OUT: DRAIN: SOURCE: GATE: CASE PIN 2 PIN 1 NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0006C o C o C/W Watts SFF15N80/3 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) RATING SYMBOL MIN TYP MAX UNIT Drain to Source Breakdown Voltage (VGS = 0 V, ID = 3mA) BVDSS 800 - - V Drain to Source ON State Resistance (VGS = 10 V, ID = 7.5A) RDS(on) - - 0.65 S Gate Threshold Voltage (VDS = VGS, ID = 4mA) VGS(th) 2.0 - 4.5 V IDSS - - 250 1000 :A IGSS - - ±100 nA Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf 3965 315 73 - 128 30 55 20 33 63 32 4870 395 120 155 45 80 50 50 100 50 VSD - - 1.50 V trr - - 800 nsec Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V) TA = 25oC TA = 125oC Gate to Source Leakage Forward (VGS = ±20V, VDS = 0V) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time VGS = 0 Volts VDS = 25 Volts f =1 MHz VGS = 10 V VDS = 400V ID = 7.5A VGS = 10V VDD = 400V ID = 7.5A RG = 2 S Diode Forvard Voltage (IS = 15A, VGS = 0V, TJ = 25oC) Diode Reverse Recovery Time NOTES: IF = 15A, VR = 100V di/dt = 100A/:sec pF nC nsec