PRELIMINARY SFT1192 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 2 AMP 500 VOLTS PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • • • • • • BVCEO 400V. Fast Switching. High Frequency. Low Saturation Voltage. 200oC Operating, Gold Eutectic Die Attach. Designed for Complementary Use with SFT6800. TO-5 SYMBOL VALUE UNITS Collector-Emitter Voltage VCEO 400 Volts Collector-Base Voltage VCBO 500 Volts Emitter-Base Voltage VEBO 10 Volts Collector Current IC 2 Amps Base Current IB 0.5 Amps Total Device Dissipation @ TC=100oC Derate above 100oC PD 6 150 W mW/oC Operating and Storage Temperature TJ, TSTG -65 to +200 MAXIMUM RATINGS Thermal Resistance, Junction to Case R2JC CASE OUTLINE: TO-5 15 COLLECTOR BASE EMITTER NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0004B o o C C/W PRELIMINARY SFT1192 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS SYMBOL MIN MAX UNITS Collector-Emitter Breakdown Voltage (IC = 5mADC) BVCEO 400 - V Collector-Base Breakdown Voltage (IC = 100uADC) BVCBO 500 - V Emitter-Base Breakdown Voltage (IE = 20uADC) BVEBO 10 - V Collector Cutoff Current (VCB = 450VDC) ICBO - 1.0 uA Collector Cutoff Current (VCE = 400VDC, VEB = 1.5VDC) ICEV - 10 uA Emitter Cutoff Current (VEB = 6VDC) IEBO - 10 uA HFE 80 60 40 - Collector-Emitter Saturation (IC =50mADC, IB = 5mADC) Voltage* (IC =500mADC, IB =50mADC) VCE(SAT) - 0.4 1.0 VDC Base-Emitter Saturation Voltage* VBE (SAT) - 1.5 2.0 VDC Current Gain Bandwidth Product (IC = 70mADC , VCE = 30VDC, f = 20MHz) fT 50 - MHz Output Capacitance (VCB= 20VDC , IE = 0ADC, f = 1.0MHz) Cob - 75 pf Input Capacitance (VBE= 2VDC , IC = 0ADC, f = 1.0MHz) Cib - 300 pf t(on) - 250 ns t(off) - 2500 ns (IC = 1.0mADC) (IC = 50mADC) (IC = 500mADC) DC Current Gain* (VCE =10VDC) Turn On Time Turn Off Time (IC =50mADC, IB = 5mADC) (IC =500mADC, IB =50mADC) (VCC = 100VDC , IC = 500mADC, VEB(OFF)=3.7VDC, IB1=IB2= 50mADC) *Pulse Test: Pulse Width = 300us, Duty Cycle = 2%