SSDI SFT1192

PRELIMINARY
SFT1192
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
2 AMP
500 VOLTS
PNP TRANSISTOR
DESIGNER'S DATA SHEET
FEATURES:
•
•
•
•
•
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BVCEO 400V.
Fast Switching.
High Frequency.
Low Saturation Voltage.
200oC Operating, Gold Eutectic Die Attach.
Designed for Complementary Use with SFT6800.
TO-5
SYMBOL
VALUE
UNITS
Collector-Emitter Voltage
VCEO
400
Volts
Collector-Base Voltage
VCBO
500
Volts
Emitter-Base Voltage
VEBO
10
Volts
Collector Current
IC
2
Amps
Base Current
IB
0.5
Amps
Total Device Dissipation @ TC=100oC
Derate above 100oC
PD
6
150
W
mW/oC
Operating and Storage Temperature
TJ, TSTG
-65 to +200
MAXIMUM RATINGS
Thermal Resistance, Junction to Case
R2JC
CASE OUTLINE: TO-5
15
COLLECTOR
BASE
EMITTER
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0004B
o
o
C
C/W
PRELIMINARY
SFT1192
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS
SYMBOL
MIN
MAX
UNITS
Collector-Emitter Breakdown Voltage
(IC = 5mADC)
BVCEO
400
-
V
Collector-Base Breakdown Voltage
(IC = 100uADC)
BVCBO
500
-
V
Emitter-Base Breakdown Voltage
(IE = 20uADC)
BVEBO
10
-
V
Collector Cutoff Current
(VCB = 450VDC)
ICBO
-
1.0
uA
Collector Cutoff Current
(VCE = 400VDC, VEB = 1.5VDC)
ICEV
-
10
uA
Emitter Cutoff Current
(VEB = 6VDC)
IEBO
-
10
uA
HFE
80
60
40
-
Collector-Emitter Saturation (IC =50mADC, IB = 5mADC)
Voltage*
(IC =500mADC, IB =50mADC)
VCE(SAT)
-
0.4
1.0
VDC
Base-Emitter Saturation
Voltage*
VBE (SAT)
-
1.5
2.0
VDC
Current Gain Bandwidth Product
(IC = 70mADC , VCE = 30VDC, f = 20MHz)
fT
50
-
MHz
Output Capacitance
(VCB= 20VDC , IE = 0ADC, f = 1.0MHz)
Cob
-
75
pf
Input Capacitance
(VBE= 2VDC , IC = 0ADC, f = 1.0MHz)
Cib
-
300
pf
t(on)
-
250
ns
t(off)
-
2500
ns
(IC = 1.0mADC)
(IC = 50mADC)
(IC = 500mADC)
DC Current Gain*
(VCE =10VDC)
Turn On Time
Turn Off Time
(IC =50mADC, IB = 5mADC)
(IC =500mADC, IB =50mADC)
(VCC = 100VDC , IC = 500mADC,
VEB(OFF)=3.7VDC,
IB1=IB2= 50mADC)
*Pulse Test: Pulse Width = 300us, Duty Cycle = 2%