ISC MJW16010

Inchange Semiconductor
Product Specification
MJW16010
Silicon NPN Power Transistors
DESCRIPTION
・With TO-247 package
・High voltage ,high speed
APPLICATIONS
・Switching Regulators
・Inverters
・Solenoids
・Relay Drivers
・Motor Controls
・Deflection Circuits
PINNING (see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
850
V
VCEO
Collector-emitter voltage
Open base
450
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
15
A
ICM
Collector current-peak
20
A
IB
Base current
10
A
IBM
Base current-peak
15
A
PD
Total Power Dissipation
Derate above 25℃
135
1.11
W
W/℃
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
VALUE
UNIT
0.93
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
MJW16010
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=5A; IB=0.7A
2.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A ;IB=1.3A
TC=100℃
3.0
3.0
V
VBEsat
Base-emitter saturation voltage
IC=10A ;IB=1.3A
TC=100℃
1.5
1.5
V
ICER
Collector cut-off current
VCE=850V;RBE=50Ω;TC=100℃
2.5
mA
ICEV
Collector cut-off current
VCE=850V; VBE(off)=1.5V
TC=100℃
0.25
1.5
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
1.0
mA
hFE
DC current gain
IC=15A ; VCE=5V
COB
Output capacitance
VCB=10V,IE=0;f=1.0KHz
400
pF
450
UNIT
V
5
Switching times resistive load
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
IC=10A ; VCC=250V
IB1=1.3A ;IB2=2.6A
PW=30μs; RB2=1.6Ω
Duty Cycle≤2.0%
2
20
ns
200
ns
1200
ns
200
ns
Inchange Semiconductor
Product Specification
MJW16010
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3