Product Specification www.jmnic.com MJ16010 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・Switching Regulators ・Inverters ・Solenoids ・Relay Drivers ・Motor Controls ・Deflection Circuits PINNING (see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 850 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 15 A ICM Collector current-peak 20 A IB Base current 10 A IBM Base current-peak 15 A PD Total Power Dissipation Derate above 25℃ 175 1.0 W W/℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com MJ16010 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX 450 UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 V VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=0.7A 2.5 V VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=1.3A TC=100℃ 3.0 3.0 V VBEsat-2 Base-emitter saturation voltage IC=10A ;IB=1.3A TC=100℃ 1.5 1.5 V ICER Collector cut-off current VCE=850V;RBE=50Ω;TC=100℃ 2.5 mA ICEV Collector cut-off current VCE=850V; VBE(off)=1.5V TC=100℃ 0.25 1.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 10 mA hFE DC current gain IC=15A ; VCE=5V COB Output capacitance VCB=10V,IE=0;f=1.0KHz 400 pF 5 Switching times resistive load td Delay time tr Rise time ts Storage time tf Fall time IC=10A ; VCC=250V IB1=1.3A ;IB2=2.6A PW=30μs; RB2=1.6Ω Duty Cycle≤2.0% JMnic 20 ns 200 ns 1200 ns 200 ns Product Specification www.jmnic.com MJ16010 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic