SSM4957(G)M
DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement
D2
Lower gate charge
D1
D1
Fast switching characteristics
SO-8
-30V
BV DSS
D2
G1
S1
R DS(ON)
24mΩ
ID
-7.7A
G2
S2
Description
D2
D1
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G2
G1
S2
S1
The SSM4957M is in the SO-8 package, which is widely preferred for
commercial and industrial surface mount applications, and is well suited
for low-voltage applications.
This device is available with Pb-free lead finish (second-level interconnect) as SSM4957GM.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID @ TA=25°C
ID @ TA=100°C
Total Power Dissipation
V
V
-7.7
A
3
-6.1
A
-30
A
2
W
1
PD @ TA=25°C
-30
± 20
Continuous Drain Current
Pulsed Drain Current
Units
3
Continuous Drain Current
IDM
Rating
Linear Derating Factor
0.016
W/°C
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
Thermal Data
Symbol
Rthj-a
10/21/2004 Rev.1.01
Parameter
Thermal Resistance Junction-ambient
3
Max.
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Value
Unit
62.5
°C/W
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SSM4957(G)M
Electrical Characteristics @ T j=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.02
-
V/°C
VGS=-10V, ID=-7A
-
-
24
mΩ
VGS=-4.5V, ID=-5A
-
-
36
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=-10V, ID=-7A
-
12
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=-7A
-
27
45
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=-250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
18
-
nC
VDS=-15V
-
14
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω , VGS=-10V
-
38
-
ns
tf
Fall Time
RD=15Ω
-
25
-
ns
Ciss
Input Capacitance
VGS=0V
-
1670 2670
pF
Coss
Output Capacitance
VDS=-25V
-
530
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
435
-
pF
Min.
Typ.
IS=-1.7A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-7A, VGS=0V,
-
35
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
34
-
nC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135°C/W when mounted on min. copper pad.
10/21/2004 Rev.1.01
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SSM4957(G)M
120
120
-10V
o
-10V
100
-ID , Drain Current (A)
-ID , Drain Current (A)
o
T A = 150 C
T A = 25 C
100
-7.0V
80
60
-5.0V
-4.5V
40
20
80
-7.0V
60
40
-5.0V
-4.5V
20
V G =-3.0V
V G =-3.0V
0
0
0
1
2
3
4
5
6
7
8
0
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
7
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
48
1.6
ID=-5A
T A =25°C
ID=-7A
V G =-10V
1.4
Normalized R DS(ON)
40
RDS(ON) (mΩ )
1
32
1.2
1.0
24
0.8
0.6
16
3
5
7
9
-50
11
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
7
2.0
6
1.5
Normalized -VGS(th) (V)
-IS(A)
5
4
T j =150 o C
T j =25 o C
3
2
1.0
0.5
1
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
Fig 5. Forward Characteristic of
Reverse Diode
10/21/2004 Rev.1.01
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM4957(G)M
f=1.0MHz
10000
ID= -7A
V DS = - 24 V
10
8
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
1000
C oss
4
C rss
2
0
100
0
10
20
30
40
50
60
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
-ID (A)
1ms
10ms
1
100ms
0.1
1s
T A =25 o C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
10/21/2004 Rev.1.01
Charge
Q
Fig 12. Gate Charge Waveform
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SSM4957(G)M
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
10/21/2004 Rev.1.01
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