Samsung Enterprise SSD 2013 Samsung OEM offering PM843 SM843 SM843T Availability Feb 13 now Feb 13; 960GB: March 13 on request Interface SATA 6.0Gbps SATA 6.0Gbps SATA 6.0Gbps SAS 6G Dual port Target Application Read intensive, <10% Write content & Streaming Servers, Low cost, Sequential Read Performance 20-30% write Boot Drive / Scratch Drive, Meta data (HPC), Web server, Random read perfromance 40-50% write extensive read and Write cache , Data warehousing, high edurance optimized 60-70% write Tier 0, Storage servers a perfect trade-off between cost and edurance; MLC based SSD with Storage Firmware high Endurance and high performance recommendations for design-in perferct cost sensitive, entry level, Low endurance, Mid range endurance, High rentention, low latency High rentention SM1625 MZ7TD120HAFV- MZ7TD240HAFV- MZ7TD480HAGM- MZ7PD120HAFV- MZ7PD240HAFV- MZ7PD480HAGM- MZ7WD120HAFV- MZ7WD240HAFV- MZ7WD480HAGM- MZ7WD960HAGP- MZ6ER100HAFV- MZ6ER200HAG 000DA 000DA 000DA 000DA 000DA 000DA 00003 00003 00003 00003 00003 M-00003 Part numbers Capacities 120 GB 240 GB 480 GB 120 GB 240 GB 480 GB 120 GB 240 GB 480 GB 960 GB 100 GB MZ6ER400HAGL- MZ6ER800HAGL00003 00003 200 GB 400 GB relative price ball park per GB 100% 113% 138% 338% Retention virgin SSD / by guaranteed endurance 10 years / 3 months 10 years / 3 months 10 years / 3 months 10 years / 3 months Warranty (logical OR) A 3 years OR TBW TBW (Total Bytes Written) allowed 1) 100% 64KB Seq. Write 2) 2) 100% 4KB Rand. Write 3) 100% 8KB Rand. Write Seq. Write @ 64KB estimated allowed TBW per day Ran. Write @ 4KB for a life time of 3 years: Ran. Write @ 8KB WPD random / Sequencial write (work load per day) D 5years OR TBW 5years OR TBW 207 TB 415 TB 830 TB 1 PB 2 PB 4 PB 2 PB 4 PB 8 PB 16 PB 4 PB 8 PB 16 PB 24 PB 52 TB2) 105TB 210TB 250 TB2) 500 TB 1 PB 500 TB2) 1 PB 2 PB 4 PB 1.8 PB3) 3.5 PB 7 PB 10 PB 207 GB 415 GB 830 GB 1 TB 2 TB 4 TB 2 TB 4 TB 8 TB 16 TB 4 TB 8 TB 16 TB 24 TB 52 GB 100 GB 210 GB 250 GB 500 GB 1 TB 500 GB 1 TB 2 TB 4 TB 1.8 TB 3.5 TB 7 TB 10 TB 0.6 / 2.5 @3 years 1 / 4 @ 5 years 2 / 8 @ 5 years 5 / 12 @ 5 years Latency Random Read/ write 0.28 ms/ 0.11 ms 0.13 ms/ 0.08 ms 0.13 ms/ 0.08 ms - Controller MDX (SATA 6.0G) MDX (SATA 6.0G) MDX (SATA 6.0G) RDX (SAS Dual Port: 12.0G) NAND 21nm 64Gb TLC 21nm 64Gb MLC 21nm 64Gb MLC 21nm 64Gb Ep-MLC Form Factor 2.5” (7mm thickness) 2.5” (7mm thickness) 2.5” (7mm thickness) 2.5”(15mm thickness) Data -loss Protection None None Yes, Tantal Cap Yes, Super Capacitor Over-Provisioning 7% 7% 7% 28% Yes Yes Yes None 3.6W / 0.3W 3.4W / 0.3W 3.0W / 0.3W 9W / 4W ( 5V +12V ) 520 / 330 MB/s 530 / 420 MB/s 500 / 400 MB/s 60KIOPS(TBD) 70 KIOPS 60 KIOPS 1.5/2.5/2.5 KIOPS 8.5 / 11.5 / 11.5 KIOPS 5.5 / 11 / 11 / 11 KIOPS Smart ID read out and setting Magician Tool Windows & Linux Power Target Typ. (Active Write) / Min. (idle) Performance 5years OR TBW Seq. Read / Write @64k Ran. Read @4k Ran. Write c @4k B @ 128KB: Single Port : 497 / 435 MB/s Dual Port : 902 / 740 MB/s @4KB: Single Port : 72 KIOPS Dual Port : 101.5 KIOPS 8KB: Single Port: 50 KIOPS Dual Port: 81 KIOPS @4KB: Single / Dual Port : 30 KIOPS / 60KIOPS @8KB: 90 / 150 KIOPS SSD vs. HDD: Smart ID & Life cycle The key advantage of SSD is its feature of having a forecastable life cycle. Lacking mechanical parts, its life cycle depends strongly on writing of data which can be tracked by electrical commands, the so-called SMART IDs. Our Magicin Tool for both windows and Linux platforms support you to track the amouth of data you write on SSD. If you track this over a period of time in your environment, the extrapolation will provide you with an exact figure of the life cycle of your SSD. the TBW figures should provide you an overview of expected life cycle. Retention: Retention refers to the time that the cells in SSD are capable of keeping the data before a refresh needs to take place. virgin SSD has up to 10 years retention based on the behavior of Flash cell built upon. The more the Flash cell are written, the higher the cell wears off and and the leakage current increases.by the consumption of TBW the retention declines to ~3 months. SSD approach recommendation: Endurance / life cycle: SSD is based on NAND Flash cells. The writting of cells is 1) Pre-selection based on needs on TBW and a destructive process. The more the cell is written the more the cell is damged. GB writes per day and targte application The leakage current increases, retention decreases. If the SSD and so the cells guide are connected to power 24/7 as in the case of server implementation could be 2) Perform a proof of concept assumed, the firware of SSD could be adjusted on increasing endurance, while 3) Implement concept in bigger scale the refresh of cells can be adjusted. 4) Keep monitoring the smart IDs Over-provisioning: The amount of the data intented to be written on SSD is not the same amount of data written on SSD. The background is mainly the basic characteristics of Flash. Writing is done page-wise, but deleting happens on a block. Any SSD needs free blocks to be able to write effectively. A designated physical area of the SSD which is not used for logical data allocations, called overprovisioning, helps the controller to allow for a broader write bandwidth. the higher the over-provisioning the better the write perfromance, witha trade-off of losing blocks for physical data. Virgin SSD / Preconditioning: a virgin SSD has a very high write bandwidth. As soon as all cells are written to once, the bandwidth decreases partially dramatically. Hence, before testing and evaluating SSD performance, make sure to have written to all cells once. This is called preconditioning of an SSD to get sustained results. SSD as HDD replacement? SSD is not a direct HDD replacement. The writing behavior of your application is key to a right choice of SSD. Check the TBW figures and the calculated total GB per Day values to a get a feeling on each SSD capabilities. The bandwidth and perfromance is the 2nd aspect to look into, and last the latency. A B C D Ver 13/ March 13 800 GB TBW figures are prelimianry, and will be updated by the end of the year 2012, subject of change, please ask your Samsung sales representative for the latest information sustained (after pre-conditioning) 100% 4KB random write IOPS 24 hrs x 7 days x 365 days the higher the SSD density the higher the the write performance, the "up to" value refers to this aspect and reflects the performance of the highest density Number of time that SSD capacity could be writteb in Random Writes per day for the specified period time given till TBW is consumed all data are subject to changes without notice, please conatct Samsung channel partner in your region for latest update TBW: Total Bytes Written is a key parameter for SSD. The data is provided above for the life cycle and a guidance of total GB per day. Nothing is more critical to SSD than the write behavior of your application. © Samsung Semiconductor Europe Samsung DDR3 DRAM offering for Server : Green memory, Generation 2 (G2 = 30nm class) Technology Node Power consumption at 100% loading* Power consumption at idle * Part Number | || || || || ||| - - 4Gb 30nm 2.6W 1.1W M393B1G73BH0-YK0 1,35 | || || || || ||| - - 2Gb 30nm 3.4W 1.0W M393B5273DH0-YK0 1333 1,35 - - | || ||| ||| - - 4Gb 30nm 25W 11.6W M386B8G70BO0-YH9 4 1600 1,35 | - - || ||| ||| - - 4Gb 30nm 13W 5.8W M386B4G70BM0-YK0 16GB 4 1600 1,35 | - - || ||| ||| - - 4Gb 30nm 6.7W 3.4W M386B2K70DM0-YK0 8GB 2 1600 1,35 - - || - - - - - 4Gb 30nm 2.7W 1.1W M474B1G73BH0-YK0 4GB 2 1600 1,35 - - || - - - - - 2Gb 30nm 2.5W 1.0W M474B5273DH0-YK0 8GB 2 1600 1,35 - - || - - - - - 4Gb 30nm 2.7W 1.1W M391B1G73BH0-YK0 4GB 2 1600 1,35 - - || - - - - - 2Gb 30nm 2.5W 1.0W M391B5273DH0-YK0 32GB 4 1333 1,35 - - | - - || 16GB 2 1600 1,35 | || || || || ||| - 8GB 2 1600 1,35 4GB 2 1600 Only for Ivybridge platform 64GB 4 Small adder vs. normal REG DIMMs. It makes sense for usage of starting 2 DPC or higher population, due to higher bandwidth. Please note: slightly higher power consumption than RDIMM 32GB 16GB RDIMM is a more preferred part. [email protected] M393B2G70BH0-YK0 [email protected] 2.4W [email protected] 6.4W [email protected] 30nm [email protected] 4Gb [email protected] - [email protected] M393B4G70BM0-YH9 [email protected] 4.0W Voltage 12W Speed 30nm Rank 4Gb Density Target Application Syteme Behavior, Intel Xeon E5 max. population: DIMM/Channel Base Component nominal speed and voltage ECC REG (standard height) for max. 2TB in Westmere-EX 4 socket; needs 64 units, runs at 800; adpot Load reduced DIMM Modules fro Sandybridge 4 socket boards HPC, Cloud Push product, highest flexibility , parity reached with 2x8GB 2 & more socket servers, normal height of min. 1U, no foot-print and space Mainstream, highest volume and availability; limitations Legacy product, to maximize bandwidth in small memory configurations, e.g. 12GB per Intel Xeon E5 2400 CPU - ||| Load Reduced BIG DATA, In-Memory , mainly for 4 & more socket servers, mainly 3 DPC, high density while keeping up memory bandwidth ECC UNB / ECC UNB SO-DIMM Dedicated server, Hosting 1 socket systems, 1600 speed is not needed. ECC UNB SODIMM : Not a standard product. Project-based support, close alignment with Samsung sales required ECC UNB : Standard Product Speed compatibility: 1600 speed is downward compatible with 1333, 1066 and 800. The speed is automatically identified by system BIOS and adjusted in the system based on the number of DIMMs per Channel (DPC). The speed adjustment is explained in the table above for each module category. Beyond the system adjustments, some platforms offer the option of speed enforcing with BIOS to a desired level (normally lower). Voltage compatibility: 1,35V modules are upward compatible with 1,5V. i.e. a 1.35V Module will also work with a 1.5V setting. Many systems of INTEL EPSD, Supermicro etc allow the users to enforce and adjust the memory voltage on BIOS level. In this sense it is advisable to source 1.35V modules since they allow you to use them also at 1.5V. The voltage is automatically identified by the system BIOS and adjusted in the system based on the number of DIMMs per Channel (DPC). Sourcing recommendation: In order to reduce the amount of part numbers, consequently reducing the inventory level and increasing the flexibility, Samsung recommends to generally use the 1600 1.35V parts. These parts come with no adder or premium to other voltage and speed options, and they are downwards compatible through BIOS setting to the desired speed and voltage seeting of your application. (coampare with the table on the right) Ver 13/ Feb 2013 Process Technology : The lower the number the more features come with the parts. 1600 speed in combination with 1,35V is the main output of 30nm technology. That is why Samsung does not ask for a premium. And we recommend to focus on one part number per product density to reduce the inventory, easier planning and importing to different plaforms and applications. you can recognize the process technology on the modues you use with hints on the Module sticker. G2 = 30nm; stands for Generation 2 of Samsung Green Products all data are subject to changes without notice, please conatct Samsung channel partner in your region for latest update © Samsung Semiconductor Europe