100mA / 50V Digital transistors (with built-in resistors) DTA143XM / DTA143XE / DTA143XUA / DTA143XKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on/off conditions need to be set for operation, making the device design easy. Structure PNP epitaxial planar silicon transistor (Resistor built-in type) Dimensions (Unit : mm) 0.7 1.6 DTA143XE 0.55 0.3 0.2 1.2 0.32 (3) 0.8 0.8 1.2 0.2 (1)(2) 0.4 0.4 (2) 0.13 (1) IN (2) GND (3) OUT 0.5 0.8 0.2 1.0 ROHM : EMT3 Abbreviated symbol : 33 DTA143XUA 2.0 0.8 (3) 1.6 2.8 2.1 1.25 0.1Min. (1) 0.65 0.65 0.15 1.3 ROHM : UMT3 EIAJ : SC-70 1.1 0.4 (3) (2) Each lead has same dimensions 2.9 0.7 0.2 0.3 (2) (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : 33 (1) 0.95 0.95 0.15 1.9 ROHM : SMT3 EIAJ : SC-59 Packaging specifications (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : 33 Inner circuit Package VMT3 EMT3 UMT3 SMT3 Packaging type Taping Taping Taping Taping Code T2L TL T106 T146 Basic ordering unit (pieces) 8000 3000 3000 3000 − − − − − OUT R1 Type (1) GND (2) IN (3) OUT Abbreviated symbol : 33 DTA143XKA 0.9 0.15 0.5 0.5 Each lead has same dimensions ROHM : VMT3 (1) 0.2 0.3Min. 0.22 0.1Min. (3) 1.6 DTA143XM IN R2 GND(+) DTA143XM DTA143XE − DTA143XUA − − DTA143XKA − − OUT IN − GND(+) − R1=4.7kΩ, R2=10kΩ www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.06 - Rev.B DTA143XM / DTA143XE / DTA143XUA / DTA143XKA Data Sheet Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit DTA143XM DTA143XE DTA143XUA DTA143XKA Supply voltage Input voltage Output current VCC −50 V VI −20 to +7 V IO −100 IC(Max.) −100 mA Power dissipation Pd Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 150 200 mW Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. VI(off) − − −0.3 VI(on) −2.5 − − VO(on) − −0.1 −0.3 V II − − −1.8 mA VI=−5V VCC=−50V, VI=0V Input voltage Output voltage Input current Unit V VO=−0.3V, IO=−20mA IO/II=−10mA/−0.5mA IO(off) − − −0.5 μA DC current gain GI 30 − − − Input resistance R1 3.29 4.7 6.11 kΩ Resistance ratio R2/R1 1.7 2.1 2.6 − − 250 − MHz Output current fT ∗ Transition frequency Conditions VCC=−5V, IO=−100μA VO=−5V, IO=−10mA − − VCE=−10V, IE=5mA, f=100MHz ∗ Characteristics of built-in transistor Electrical characteristic curves OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(on) (V) −20 −10 Ta=−40°C 25°C 100°C −5 −2 −1 −500m −200m −100m −100μ −200μ −500μ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (V) −1 −2m −1m −500μ Ta=100°C −200μ 25°C −100μ −50μ −40°C −20μ −10μ −5μ −2μ −1μ 1k VCC=−5V VO=−5V 500 200 100 Ta=100°C 25°C −40°C 50 20 10 5 2 0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 INPUT VOLTAGE : VI(off) (V) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) 1 −100μ −200μ −500μ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (V) Fig.3 DC current gain vs. output current IO/II=20 −500m OUTPUT VOLTAGE : VO(on) (V) −10m −5m VO=−0.3V −50 DC CURRENT GAIN : GI −100 −200m −100m −50m Ta=100°C 25°C −40°C −20m −10m −5m −2m −1m −100μ −200μ −500μ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (V) Fig.4 Output voltage vs. output current www.rohm.com c 2009 ROHM Co., Ltd. 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