100mA/50V Digital transistors(with built-in resistors) DTC044TM / DTC044TEB / DTC044TUB Dimensions (Unit : mm) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. (See equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. VMT3 Abbreviated symbol : 11 EMT3F (3) Structure NPN epitaxial planar silicon transistor (Resistor built-in type) (1) (2) Abbreviated symbol : 11 UMT3F 2.0 0.53 0.9 1.25 (3) 0.425 2.1 0.425 0.32 (1) 0.53 Applications Inverter, Interface, Driver (2) 0.65 0.65 1.3 0.13 Abbreviated symbol : 11 Packaging specifications Package Packaging Type Type Code Basic ordering unit (pieces) DTC044ＴM DTC044ＴEB DTC044ＴUB Equivalent circuit VMT3 Taping T2L EMT3F Taping TL UMT3F Taping TL 8000 3000 3000 ○ - ○ - ○ R1 C B : Base C : Collector E : Emitter E B R 1=47k Absolute maximum (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation * Junction temperature Range of storage temperature Symbol M VCBO VCEO VEBO IC PD Tj Tstg Limits(DTC044T□) EB UB 50 50 5 60 150 200 150 -55 to +150 Unit V V V mA mW C C * Each terminal mounted on a reference land www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.08 - Rev.A Data Sheet DTC044TM / DTC044TEB / DTC044TUB Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Collector-Base breakdown voltage BVCBO 50 - - V IC=50A Collector-Emitter breakdown voltage BVCEO 50 - - V IC=1mA Emitter-Base breakdown voltage BVEBO 5 - - V IE=50A ICBO - - 500 nA VCB=50V Collector cut-off current Max. Unit Test Conditions IEBO - - 500 nA VEB=4V VCE(sat) - 0.05 0.15 V IC=5mA / IB=0.5mA hFE 100 - 600 - VCE=10V / IC=5mA Transition frequency * fT - 250 - MHz VCE=10V / IE=-5mA f=100MHz Input resistance R1 32.9 47 61.1 k Emitter cut-off current Collector-Emitter saturation voltage DC current gain * Characteristics of built-in transistor Electrical characteristics curves 1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 DC CURRENT GAIN : hFE VCE=10V 100 Ta=125ºC Ta=75ºC Ta=25ºC Ta=-40ºC 10 IC/IB=10 0.1 Ta=125ºC Ta=75ºC Ta=25ºC Ta=-40ºC 0.01 1 0.1 1 10 0.001 0.01 100 COLLECTOR CURRENT : IC (mA) Fig.1 DC Current Gain vs. Collector Current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 COLLECTOR CURRNET : IC (mA) Fig.2 Collector Saturation Voltage vs. Collector Current 2/2 2011.08 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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