STS126

STS126
Gre
r
Pro
S a mHop Microelectronics C orp.
Ver 2.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
100V
1.4A
312 @ VGS=10V
Rugged and reliable.
Surface Mount Package.
D
S OT-23
D
G
S
G
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
VDS
VGS
ID
IDM
Limit
Units
Drain-Source Voltage
100
V
Gate-Source Voltage
±20
V
TA=25°C
1.4
A
TA=70°C
1.1
A
5.3
A
TA=25°C
1.25
W
TA=70°C
0.8
W
-55 to 150
°C
100
°C/W
Drain Current-Continuous
-Pulsed
a
b
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
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STS126
Ver 2.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
VGS=0V , ID=250uA
100
IDSS
Zero Gate Voltage Drain Current
VDS=80V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
VDS=VGS , ID=250uA
1.0
Typ
Max
Units
V
1
uA
±100
nA
1.6
2.5
V
Drain-Source On-State Resistance
VGS=10V , ID=0.7A
250
312
m ohm
Forward Transconductance
VDS=5V , ID=0.7A
1.8
S
VDS=25V,VGS=0V
f=1.0MHz
275
27
20
pF
pF
pF
8
ns
10.5
ns
ns
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output
Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
c
tD(OFF)
Turn-Off Delay Time
tf
Qg
Fall Time
VDD=50V
ID=0.7A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
VDS=50V,ID=0.7A,VGS=10V
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=50V,ID=0.7A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=0.7A
16
2.8
ns
4.5
nC
0.96
nC
1.4
nC
0.78
1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
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STS126
Ver 2.0
4.5
6
VGS = 10V
VGS = 5V
ID, Drain Current(A)
ID, Drain Current(A)
5
4
VGS = 4.5V
3
2
VGS = 4V
1
0
3.6
2.7
Tj=125 C
-55 C
1.8
25 C
0.9
VGS = 3.5V
0
0
1.0
0.5
2.0
1.5
2.5
3.0
0
600
2.0
500
1.8
400
VGS = 10V
200
100
5
6
VGS=10V
ID=0.7A
1.6
1.4
1.2
1.0
0
0.1
1.2
2.4
3.6
4.8
0.8
6.0
0
1.1
1.0
0.9
0.8
0.7
0.6
-25
0
25
50
75
100
125
150
Figure 4. On-Resistance Variation with
Drain Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
VDS = VGS
ID = 250uA
1.2
75
Tj, Junction Temperature ( C)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.3
50
25
Tj( C)
ID, Drain Current (A)
Vth, Normalized
Gate-Source Threshold Voltage
4
Figure 2. Transfer Characteristics
RDS(ON), On-Resistance
Normalized
R DS(on)(m Ω)
Figure 1. Output Characteristics
0.5
-50
3
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
300
2
1
100 125 150
Tj, Junction Temperature ( C)
1.3
ID = 250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
May,31,2012
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STS126
Ver 2.0
700
20.0
ID =0.7A
500
125 C
400
75 C
300
25 C
Is, Source-drain current (A)
RDS(on)(m Ω)
600
200
125 C
25 C
10.0
5.0
75 C
100
0
4
2
0
8
6
1.0
10
0.4
0.8
1.2
1.6
2.0
VGS, Gate-Sorce Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
300
VGS, Gate to Source Voltage (V)
Ciss
250
C, Capacitance (pF)
0
200
150
100
Coss
50
Crss
0
VDS = 50V
ID = 0.7A
8
6
4
2
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
VDS, Drain-to Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
8
100
10
ID, Drain Current (A)
Switching Time(ns)
TD(off )
Tr
10
TD(on)
Tf
1
V DS =50V,I D =0.7A
V GS =10V
0.1
1
10
1
Rg, Gate Resistance(Ω)
N)
Lim
it
10
1m
10 s
m
0m s
s
10
DC s
10
0u
us
s
10
0.1
VGS = 10V
Single Pulse
TA = 25 C
0.01
0.1
100
R
(O
DS
1
10
100
VDS, Drain-Source Voltage (V)
Figure 11. switching characteristics
Figure 12. Maximum Safe
Operating Area
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STS126
Ver 2.0
Therma l R esis tance
Norm aliz ed Transien t
10
1
0.5
P DM
0.2
0.1
0.02
0.01
0.01
0.00001
t1
0.1
0.05
t2
1.
2.
3.
4.
Single Pulse
0.0001
0.001
0.01
0.1
1
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
10
100
1000
Square Wave Pulse Duration(sec)
Figure 13. Normalized Thermal Transient Impedance Curve
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STS126
Ver 2.0
PACKAGE OUTLINE DIMENSIONS
SOT 23
D
E1
1
2
e
b
DETAIL "A"
A1
e1
L
DETAIL "A"
A
E
3
SYMBOLS
D
E
E1
e
e1
b
C
A
A1
L
L1
L1
MILLIMETERS
INCHES
MIN
MAX
2.700
3.100
2.200
3.000
1.200
1.700
0.850
1.150
1.800
2.100
0.300
0.510
0.080
0.200
0.000
0.150
0.887
1.300
0.450 REF.
0.600 REF.
MIN
MAX
0.106
0.122
0.118
0.087
0.047
0.067
0.033
0.045
0.071
0.083
0.020
0.019
0.008
0.003
0.000
0.006
0.035
0.051
0.018 REF.
0.024 REF.
O
O
10
0
0
O
10
O
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STS126
Ver 2.0
SOT23 Tape and Reel Data
SOT23-3L Carrier Tape
TR
FEED DIRECTION
UNIT:р
PACKAGE
SOT23-3L
A0
B0
2.77
²0.10
3.15
²0.10
K0
D0
D1
E
E1
E2
P0
P1
P2
T
1.75
²0.10
3.50
²0.05
4.00
²0.10
4.00
²0.10
2.00
²0.05
0.22
²0.04
1.22
²0.10
О1.00
+0.05
О1.50
+0.10
8.00
+0.30
-0.10
SOT23-3L Reel
UNIT:р
TAPE SIZE
REEL SIZE
M
N
W
W1
H
K
S
G
R
V
8р
О178
О178
²1
О60
²1
9.00
²0.5
12.00
²0.5
О13.5
!!²0.5
10.5
2.00
²0.5
О10.0
5.00
18.00
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