STM6960

Green
Product
STM6960
S a mHop Microelectronics C orp.
Ver 1.2
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
R DS(ON) (m Ω) Max
ID
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
55 @ VGS=10V
60V
Suface Mount Package.
5.5A
70 @ VGS=4.5V
S O-8
1
D2
5
4
G2
D2
6
3
S2
D1
7
2
G1
D1
8
1
S1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
ID
IDM
Limit
Parameter
Drain-Source Voltage
60
±20
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
TA=25°C
TA=70°C
a
b
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
Units
V
5.5
V
A
4.5
A
25
A
TA=25°C
2
W
TA=70°C
1.28
W
-55 to 150
°C
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
62.5
Details are subject to change without notice.
°C/W
Apr,27,2010
1
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STM6960
Ver 1.2
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body leakage current
IGSS
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
Conditions
Min
VGS=0V , ID=250uA
60
Typ
1
±100
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
VDS=VGS , ID=250uA
Max
1
Units
V
uA
nA
1.8
3
47
55
55
V
m ohm
70
m ohm
RDS(ON)
Drain-Source On-State Resistance
VGS=10V , ID=4.5A
VGS=4.5V , ID=3A
gFS
Forward Transconductance
VDS=5V , ID=4.5A
12
S
VDS=25V,VGS=0V
f=1.0MHz
1100
75
55
pF
pF
pF
VDD=30V
ID=4.5A
VGS=10V
RGEN=3 ohm
18
14
40
8
ns
ns
ns
ns
VDS=48V,ID=4.5A,VGS=10V
18
nC
VDS=48V,ID=4.5A,VGS=4.5V
9
nC
2.3
4.9
nC
nC
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On DelayTime
tr
Rise Time
tD(OFF)
Turn-Off DelayTime
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
c
VDS=48V,ID=4.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
VGS=0V,IS=1.7A
Diode Forward Voltage
0.8
1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
Apr,27,2010
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STM6960
Ver 1.2
15
15
VGS=4.5V
-55 C
I D, Drain Current(A)
I D, Drain Current(A)
VGS=10V
12
VGS=4V
9
VGS=3.5V
6
3
9
6
3
Tj=125 C
VGS=3V
0
0
2.0
1.5
1.0
0.5
2.5
0
0.0
3.0
V DS, Drain-to-Source Voltage(V)
1.6
2.4
3.2
4.0
4.8
Figure 2. Transfer Characteristics
90
2.0
V G S =10V
I D =4.5A
1.8
R DS(on), On-Resistance
Normalized
75
VGS=4.5V
RDS(on)(m Ω)
0.8
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
60
45
VGS=10V
30
15
1
25 C
12
1.6
1.4
V G S =4.5V
I D =3A
1.2
1.0
0
1
3
6
9
12
15
0
50
25
75
100
125
150
T j ( °C )
I D, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.3
VDS=VGS
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125 150
Tj, Junction Temperature( ° C )
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Apr,27,2010
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STM6960
Ver 1.2
180
20.0
Is, Source-drain current(A)
ID=4.5A
R DS(on)(m Ω)
150
120
125 C
90
60
75 C
25 C
30
0
5.0
75 C
125 C
1.0
0
2
4
6
8
0
10
0.3
0.9
1.2
1.5
V SD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V GS, Gate to Source Voltage(V)
1000
800
Ciss
600
400
200
Coss
Crss
0
0
5
10
15
20
25
VDS=48V
ID=4.5A
8
6
4
2
0
30
0
2
4
6
8
10
12
14 16
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
50
600
100
60
I D, Drain Current(A)
30
10
Switching Time(ns)
0.6
V GS, Gate-to-Source Voltage(V)
1200
C, Capacitance(pF)
25 C
10.0
Tr
Tf
10
V DS =30V ,ID=4.5A
1
R DS
0.1
0.03
6 10
Rg, Gate Resistance(Ω)
it
10
10
0m
ms
s
1s
DC
VGS=10V
Single Pulse
TA=25 C
0.1
60 100 300 600
Lim
1
V G S =10V
1
(
)
ON
1
10
60
V DS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Figure 11. switching characteristics
Apr,27,2010
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STM6960
Ver 1.2
Normalized Transient
Thermal Resistance
10
1
0.5
0.2
0.1
P DM
0.05
t1
0.1
t2
0.02
0.01
0.01
0.00001
1.
2.
3.
4.
Single Pulse
0.0001
0.001
0.01
0.1
1
10
R ’J A (t)=r (t) * R ’J A
R ’J A =S ee Datas heet
T J M-T A = P DM* R ’J A (t)
Duty C ycle, D=t1/t2
100
1000
Square Wave Pulse Duration(sec)
Figure 13. Normalized Thermal Transient Impedance Curve
Apr,27,2010
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STM6960
Ver 1.2
PACKAGE OUTLINE DIMENSIONS
SO-8
D
E
A2 A
1
e
A1
b
H
h X 45
O
C
L
SYMBOLS
A
A1
A2
b
C
D
E
e
H
L
h
MILLIMETERS
MAX
MIN
1.75
1.35
0.25
0.10
1.63
1.25
0.51
0.31
0.17
0.25
4.80
5.00
3.70
4.00
1.27 REF.
5.80
6.20
1.27
0.40
0±
8±
0.25
0.50
MIN
INCHES
MAX
0.053
0.069
0.004
0.010
0.064
0.049
0.020
0.012
0.010
0.007
0.197
0.189
0.146
0.157
0.050 BSC
0.228
0.244
0.016
0.050
8±
0±
0.020
0.010
Apr,27,2010
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STM6960
Ver 1.2
SO-8 Tape and Reel Data
SO-8 Carrier Tape
P1
D1
P2
B0
E
E2
E1
A
A0
A
P0
D0
TERMINAL NUMBER 1
T
SECTION A-A
K0
FEEDING DIRECTION
unit:р
PACKAGE
SOP 8N
150п
A0
6.50
²0.15
B0
5.25
²0.10
D0
K0
ӿ1.5
(MIN)
2.10
²0.10
D1
E
ӿ1.55
²0.10
12.0
+0.3
- 0.1
E1
1.75
²0.10
E2
P0
P1
P2
T
5.5
²0.10
8.0
²0.10
4.0
²0.10
2.0
²0.10
0.30
²0.013
SO-8 Reel
W1
S
K
V
M
N
G
R
H
W
UNIT:р
TAPE SIZE
12 р
REEL SIZE
M
N
W
ӿ330
330
² 1
62
²1.5
12.4
+ 0.2
W1
16.8
- 0.4
H
ӿ12.75
+ 0.15
K
S
G
R
V
2.0
²0.15
Apr,27,2010
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