STD12L01A

Gr
Pr
STD12L01A
S a mHop Microelectronics C orp.
Ver 2.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
Rugged and reliable.
140 @ VGS=10V
100V
TO-251 Package.
12A
170 @ VGS=4.5V
G
D
S
STD SERIES
TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
VDS
VGS
ID
IDM
Limit
Units
Drain-Source Voltage
100
V
Gate-Source Voltage
±20
V
12
A
9.6
A
35
A
36
mJ
TC=25°C
45
W
TC=70°C
29
W
-55 to 150
°C
2.8
°C/W
50
°C/W
Drain Current-Continuous
-Pulsed
TC=25°C
TC=70°C
a
b
EAS
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
a
d
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
a
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Oct,15,2010
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STD12L01A
Ver 2.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
VGS=0V , ID=250uA
100
IDSS
Zero Gate Voltage Drain Current
VDS=80V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
Forward Transconductance
Max
Units
V
uA
1
±100
nA
1.8
3
V
VGS=10V , ID=6A
112
140
m ohm
VGS=4.5V , ID=5.5A
130
170
m ohm
VDS=VGS , ID=250uA
Drain-Source On-State Resistance
Typ
1
VDS=10V , ID=6A
15
S
VDS=25V,VGS=0V
f=1.0MHz
700
48
31
pF
pF
pF
13
11.5
ns
ns
23
ns
10
ns
VDS=50V,ID=6A,VGS=10V
11.5
nC
VDS=50V,ID=6A,VGS=4.5V
6
nC
1.5
nC
3.3
nC
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output
Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
c
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=6A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=1A
0.78
1.3
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
Oct,15,2010
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STD12L01A
Ver 2.0
15
15
12
VGS=4.5V
9
I D, Drain Current(A)
ID, Drain Current(A)
VGS=10V
VGS=4V
6
VGS=3.5V
3
12
Tj=125 C
9
6
-55 C
25 C
3
VGS=3V
0
2.0
1.5
1.0
0.5
2.5
0
3.0
0
2.4
3.6
4.8
7.2
6.0
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
300
2.0
250
1.8
200
V G S =4.5V
150
100
V G S =10V
50
V G S =10V
I D =6A
1.6
1.4
V G S =10V
I D =5.5A
1.2
1.0
1
0
1
3
6
9
12
0
15
I D, Drain Current(A)
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75
100
125
150
T j ( °C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
50
25
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.2
VDS, Drain-to-Source Voltage(V)
R DS(on), On-Resistance
Normalized
RDS(on)(m Ω)
0
75 100 125 150
Tj, Junction Temperature(° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Oct,15,2010
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STD12L01A
Ver 2.0
20.0
300
Is, Source-drain current(A)
I D =6A
RDS(on)(m Ω)
250
200
125 C
150
75 C
100
25 C
50
0
0
2
4
6
8
0
0.25
0.50
25 C
0.75
1.00
1.25
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V GS, Gate to Source Voltage(V)
C, Capacitance(pF)
75 C
V GS, Gate-to-Source Voltage(V)
Ciss
750
600
450
300
150
Coss
Crss
10
VDS=50V
ID=6A
8
6
4
2
0
0
5
10
15
20
25
30
0
1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
80
300
I D, Drain Current(A)
100
Switching Time(ns)
5.0
1.0
10
900
0
125 C
10.0
TD(off )
Tr
TD(on)
10
Tf
10
RD
10
it
1m
10
D C ms
0u
s
s
VGS=10V
Single Pulse
TA=25 C
0.1
0.1
1
10
im
1
VDS=50V,ID=1A
VGS=10V
1
O
S(
L
N)
100
1
10
100
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Oct,15,2010
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STD12L01A
Ver 2.0
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
Figure 13b.
Figure 13a.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
R J J A (t)=r (t) * R J J A
R J J A =S ee Datas heet
T J M-T A = P DM* R J J A (t)
Duty C ycle, D=t1/t2
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Oct,15,2010
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STD12L01A
Ver 2.0
PACKAGE OUTLINE DIMENSIONS
A
E
E2
TO-251
C
L
D1
D2
E1
1
2
H
B2
D
3
L2
L1
B1
D3
P
SYMBOL
A
A1
B
B1
B2
C
D
D1
D2
D3
H
E
E1
E2
L
L1
L2
P
A1
B
MILLIMETERS
MIN
MAX
2.100
2.500
0.350
0.650
0.400
0.800
0.650
1.050
0.500
0.900
0.400
0.600
5.300
5.700
5.300
4.900
6.700
7.300
8.000
7.000
15.300
13.700
6.700
6.300
4.600
4.900
4.800
5.200
1.300
1.700
1.400
1.800
0.500
0.900
2.300 BSC
INCHES
MIN
MAX
0.083
0.098
0.014
0.026
0.031
0.016
0.041
0.026
0.035
0.020
0.024
0.016
0.224
0.209
0.209
0.193
0.287
0.264
0.315
0.276
0.539
0.602
0.264
0.248
0.193
0.181
0.189
0.205
0.051
0.067
0.071
0.055
0.020
0.035
0.091 BSC
Oct,15,2010
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STD12L01A
Ver 2.0
TO-251 Tube
TO-251 Tube
540 + 1.5
4.5
5.5
2~ӿ3.0
" A"
0.4
1.90
7.50
1.25
5.25
1.4
1.65
2.25
6.60
19.75
UNIT:nn
Oct,15,2010
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