SP3902

SP3902
Green
Product
S a mHop Microelectronics C orp.
Ver 1.1
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
Rugged and reliable.
17 @ VGS=10V
30V
Suface Mount Package.
10A
27 @ VGS=4.5V
D1
D1
D2
D2
S1
G1
S2
G2
PIN1
PDFN 5x6
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Limit
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
TA=25°C
10
A
TA=70°C
8
A
IDM
EAS
-Pulsed
ae
b
Single Pulse Avalanche Energy
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
d
42
A
49
mJ
TA=25°C
2.5
W
TA=70°C
1.6
W
-55 to 150
°C
50
°C/W
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Jul,18,2013
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SP3902
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
VGS=0V , ID=250uA
30
IDSS
Zero Gate Voltage Drain Current
VDS=24V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
Max
Units
V
1
uA
±100
nA
1.7
2.5
V
VGS=10V , ID=5A
13
17
m ohm
VGS=4.5V , ID=4A
19
27
m ohm
VDS=10V , ID=5A
18
S
VDS=15V,VGS=0V
f=1.0MHz
500
119
93
pF
pF
pF
12.8
14.6
ns
ns
17.3
ns
16
9
ns
VDS=VGS , ID=250uA
1.0
Typ
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
c
VDD=15V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=15V,ID=5A,VGS=10V
nC
VDS=15V,ID=5A,VGS=4.5V
5.1
nC
VDS=15V,ID=5A,
VGS=10V
1.4
nC
3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V,IS=3A
0.81
1.3
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 300us, Duty Cycle <
_ 2%.
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)
e.Drain current limited by maximum junction temperature.
Jul,18,2013
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SP3902
Ver 1.1
40
30
VGS=5V
32
ID, Drain Current(A)
ID, Drain Current(A)
VGS=10V
VGS=4V
VGS=4.5V
24
16
VGS=3.5V
8
24
18
Tj=125 C
12
25 C
-55 C
6
VGS=3V
0
1.0
0.5
1.5
2.5
2.0
0
3.0
0
3.2
4.0
4.8
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1.6
50
1.5
40
30
V G S =4.5V
20
10
V G S =10V
8
1
16
24
1.3
1.2
32
0
40
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
25
50
25
50
75
100
125
150
T j ( °C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
0
0
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
-50 -25
V G S =4.5V
I D =4A
1.1
I D, Drain Current(A)
1.4
V G S =10V
I D =5A
1.4
1.0
1
Vth, Normalized
Gate-Source Threshold Voltage
2.4
V GS, Gate-to-Source Voltage(V)
60
0.2
1.6
0.8
VDS, Drain-to-Source Voltage(V)
R DS(on), On-Resistance
Normalized
RDS(on)(m Ω)
0
75 100 125 150
Tj, Junction Temperature( ° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Jul,18,2013
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SP3902
Ver 1.1
20
48
Is, Source-drain current(A)
I D =5A
40
RDS(on)(m Ω)
32
24
125 C
16
75 C
25 C
8
0
4
6
8
75 C
10
0
0.25
0.50
0.75
1.00
1.25
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V GS, Gate to Source Voltage(V)
10
750
C, Capacitance(pF)
25 C
125 C
1
2
0
900
600
Ciss
450
300
Coss
150
Crss
0
10
0
5
10
15
20
25
VDS=15V
ID=5A
8
6
4
2
0
30
2
0
4
6
8
10
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
12
I D, Drain Current(A)
100
Switching Time(ns)
TD(off )
Tr
Tf
TD(on)
10
VDS=15V,ID=1A
VGS=10V
10
R
(O
DS
N)
Lim
it
10
1m
10
0m
s
ms
s
DC
1
0.1
10
0u
s
VGS=10V
Single Pulse
TA=25 C
1
1
6
10
60 100
0.1
1
10
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jul,18,2013
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SP3902
Ver 1.1
V(BR)DSS
tp
L
VDS
D.U.T
RG
+
- VDD
IAS
20V
tp
0.01
IAS
Unclamped Inductive Waveforms
Uncamped Inductive Test Circuit
Figure 13b.
Figure 13a.
1
Normalized Transient
Thermal Resistance
0.5
0.2
0.1
0.1
0.05
0.02
P DM
0.01
0.01
t1
Single Pulse
1.
2.
3.
4.
t2
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
0.001
0.00001
0.0001
0.001
0.1
0.01
1
Square Wave Pulse Duration(sec)
100
10
1000
Figure 14. Normalized Thermal Transient Impedance Curve
Jul,18,2013
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SP3902
Ver 1.1
PACKAGE OUTLINE DIMENSIONS
PDFN 5x6-8L
E1
E
E2
D
D1
e
D2
b
L2
L
L1
BOTTOM VIEW
TOP VIEW
A
A1
c
SIDE VIEW
SYMBOLS
A
A1
b
c
D
D1
D2
E
E1
E2
e
L
L1
L2
0
MIN
0.85
0.00
0.30
0.15
0.50
0.45
0.00
MILLIMETERS
NOM
0.95
0.40
0.20
5.20 BSC
4.35 BSC
0.60
5.55 BSC
6.05 BSC
3.82 BSC
1.27 BSC
0.55
MAX
1.00
0.05
0.50
0.25
0.75
0.65
0.15
0.68 REF
0o
10o
Jul,18,2013
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SP3902
Ver 1.1
TOP MARKING DEFINITION
PDFN 5x6-8L
SamHop Logo
3902
Product No.
XXXXXX
Pin 1
SMC internal Code No.(A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
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