STA4470 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 12 @ VGS=10V 40V Suface Mount Package. 11A 16 @ VGS=4.5V PDIP-8 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed a Units V V TA=25°C Limit 40 ±20 11 TA=70°C 8.9 A 55 A 2.5 W 1.6 W -55 to 150 °C 50 °C/W b a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range TA=25°C TA=70°C THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. A Aug,18,2008 1 www.samhop.com.tw STA4470 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Conditions Min VGS=0V , ID=250uA 40 Typ Max Units V VDS=32V , VGS=0V VGS= ±20V , VDS=0V uA 1 ±100 nA 3 12 V m ohm 16 m ohm b ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge VDS=VGS , ID=250uA VGS=10V , ID=11A VGS=4.5V , ID=9.6A VDS=5V , ID=11A 1.0 2.0 10 12 26.5 1720 230 145 pF pF pF 22 23 65 30 ns ns ns ns VDS=20V,ID=11A,VGS=10V 25 nC VDS=20V,ID=11A,VGS=4.5V 12 nC VDS=20V,ID=11A, VGS=10V 2.5 5.5 nC nC VDS=20V,VGS=0V f=1.0MHz c VDD=20V ID=1A VGS=10V RGEN=3.3 ohm DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage S VGS=0V,IS=1.7A 0.74 1.7 A 1.2 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. Aug,18,2008 2 www.samhop.com.tw STA4470 Ver 1.0 60 15 VGS=10V VGS=4.5V VGS=3.5V I D, Drain Current(A) I D, Drain Current(A) 48 VGS=3V 36 24 12 VGS=2.5V 12 9 25 C 6 Tj=125 C 0 0 0 0.5 1 1.5 2 2.5 0 3 V DS, Drain-to-Source Voltage(V) 0.6 1.2 1.8 2.4 3.0 3.6 VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 12 2.2 V G S =10V I D =11A 2.0 R DS(on), On-Resistance Normalized 10 V G S =4.5V RDS(on)(m Ω) -55 C 3 8 6 V G S =10V 4 2 0 12 1 24 36 48 1.8 1.6 V G S =4.5V I D =9.6A 1.4 1.2 1.0 0 60 0 50 25 75 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.4 V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.4 I D =250uA 1.3 1.2 1.1 1.0 0.9 0.8 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Aug,18,2008 3 www.samhop.com.tw STA4470 Ver 1.0 20.0 30 Is, Source-drain current(A) I D =11A R DS(on)(m Ω) 25 20 125 C 15 75 C 10 25 C 5 25 C 125 C 75 C 1.0 0 0 2 4 10 8 6 0.2 0.4 0.8 1.0 1.2 V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 2000 Ciss 1600 1200 800 Coss 400 Crss 0 0 5 10 15 20 25 V DS =20V 8 I D =11A 6 4 2 0 30 0 4 8 12 16 20 24 28 32 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 600 T D(off) 100 60 Tr I D, Drain Current(A) Switching Time(ns) 0.6 V GS, Gate-to-Source Voltage(V) 2400 C, Capacitance(pF) 10.0 Tf T D(on) 10 V DS =20V ,ID=1A 1 6 10 Rg, Gate Resistance(Ω) im it 1m 10 1 0.05 0.1 60 100 300 600 RD )L 10 0.1 V G S =10V 1 10 ON S( 0m s s s DC V G S =10V S ingle P uls e T A =25 C 1 10 40 70 VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Aug,18,2008 4 www.samhop.com.tw STA4470 Ver 1.0 V DD ton RL V IN tf 90% 90% D V OUT V OUT VG S RGE N toff td(off) tr td(on) 10% INVE R TE D 10% G 90% V IN S 50% 50% 10% P ULS E WIDTH Figure 14. Switching Waveforms Figure 13. Switching Test Circuit 1 Normalized Transient Thermal Resistance 0.5 0.2 0.1 0.1 0.05 0.02 P DM 0.01 0.01 t1 Single Pulse t2 1. 2. 3. 4. 0.001 0.0000 1 0.000 1 0.001 0.01 0. 1 1 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100 1000 Square Wave Pulse Duration(sec) Figure 15. Normalized Thermal Transient Impedance Curve Aug,18,2008 5 www.samhop.com.tw STA4470 Ver 1.0 PACKAGE OUTLINE DIMENSIONS PDIP-8 1 SYMBOL A A1 A2 b c b2 b3 L e D D1 E E1 eA eB MIN .145 .020 .125 .015 .009 .045 .030 .125 .090 .373 .030 .300 .245 .280 .310 INCHES NOM .172 .130 .018 .012 .060 .039 .132 .100 .386 .045 .310 .250 .325 MAX .200 .135 .021 .014 .070 .045 .140 .110 .400 .060 .320 .255 .365 MIN 3.68 0.51 3.18 0.38 0.23 1.14 0.76 3.18 2.29 9.47 0.76 7.62 6.22 7.11 7.87 MILLIMETERS NOM MAX 4.37 5.08 3.30 3.43 0.46 0.53 0.30 0.36 1.52 1.78 0.99 1.14 3.35 3.56 2.54 2.79 9.80 10.16 1.14 1.52 7.87 8.13 6.35 6.48 8.26 9.27 Aug,18,2008 6 www.samhop.com.tw